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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and properties of intrinsic Josephson junctions in thin films of Tl-Ba-Ca-Cu-O (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3396-3400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed intrinsic Josephson effects for current flow perpendicular to the CuO2 planes in HTSC thin films. Tl-Ba-Ca-Cu-O thin films were deposited on step edges in LaAlO3 substrates. Due to the special preparation process, microbridges across such steps act as stacks of intrinsic Josephson junctions with current flow perpendicular to the CuO2 planes (STEP STACK junctions). Up to 130 individual junctions could be observed exhibiting high IcRN products up to 26 mV per junction. We observed ac-Josephson effects as Shapiro steps and in microwave emission experiments. At low temperatures sharp emission peaks were detected at frequencies of 11.3 and 24.2 GHz. Broad emission peaks from the whole stack were observed at temperatures close to Tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363205
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray diagnostics of plasma focus DPF-78 discharge with heavy-gas admixtures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4973-4978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray structure (λ〈10 A(ring)) of the DPF-78 discharge was investigated with different heavy-gas admixtures to a basic D2 filling. A possible classification of plasma features is proposed. Micropinches with an unusual high aspect ratio of about 10:1 were found. Soft x-ray spectra of single micropinches were registered on film. The use of x-ray spectroscopic methods by means of spectra simulation codes allowed us to estimate the parameters of particular types of pinches with axial size of 0.5 mm and full radial size of 0.05 mm. In the He-like ionization state we obtained ne≈3×1021 cm−3 and Te≈0.8 keV. The electron temperature determined in the H-like ionization stage was considerably higher, Te≈2 keV, indicating a strong ionizing plasma. Possible deviations from the Bennett condition are discussed in connection with the spectroscopic results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359305
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  • 3
    Electronic Resource
    Electronic Resource
    Structural, optical, and electronic properties of magnetron-sputtered platinum oxide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7672-7675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable platinum oxide films have been prepared through magnetron sputtering and have been analyzed on the bases of energy-sensitive microanalyses, x-ray diffraction, resistivity, and optical reflectance measurements. The complex dielectric function has been determined for various oxygen contents in the film covering the wave-number regime 50 cm−1–λ−1–50 000 cm−1. The vibrational properties are dominated through a strong band, centered at 765 cm−1, associated with a asymmetric stretching mode of the Pt—O bond. The films are amorphous, with chemical composition PtOx, where 1〈x〈2.1, and are considered as a homogeneous solid solution of PtO and PtO2. The materials system displays a conductor–insulator transition at x≥2, in connection with an optical band gap Eg of ∼1.2 eV in the fully oxidized state. The conduction mechanism over the whole range of compositions is thermally activated and is determined through a large density of localized states extending into the band gap. At x〈2 the optical gap disappears, consistent with the semimetallic behavior of the materials system for this range of composition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362341
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  • 4
    Electronic Resource
    Electronic Resource
    Design and performance of the high-flux/high-brightness x-ray wiggler beamline BW2 at HASYLAB : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1668-1670 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The wiggler beamline BW2 at HASYLAB provides an intense monochromatic photon beam in the x-ray range from 2.02 to 33.5 keV for a diversity of experimental x-ray techniques such as surface diffraction, photoemission, absorption, microtomography, standing waves, etc. The beamline layout and its overall performance are described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145877
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  • 5
    Electronic Resource
    Electronic Resource
    Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6466-6475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. Hafnium oxide films were formed by reactive sputtering from a single Hf oxide target in a predominantly Ar atmosphere containing small additions of oxygen. Hafnium silicates were made by adding a He-diluted silane gas for Si incorporation. By changing the silane gas flow, different Si atomic concentrations were incorporated into the Hf oxide films. Depositions were performed with the substrate held at temperatures of 22 °C and 500 °C. The chemical composition of the films was determined with nuclear techniques. Optical reflectivity was used to measure the optical band gap. The film morphology was investigated by transmission electron microscopy (TEM) and the electrical properties were measured with capacitance–voltage and current–voltage measurements using aluminum gate capacitors. TEM and electrical measurement showed that a SiO2 interfacial layer of about 3 nm formed at the Si interface due to the oxidizing sputter ambient. This precluded the growth of Hf based high-K films with small equivalent thickness. After correction for the interfacial oxide layer, the dielectric constant was found to decrease from about 21 for Hf oxide to about 4–5 for the Hafnium silicates with low Hf content (3 at. % Hf and 32 at. % Si). The optical band gap was found to increase from 5.8 eV for Hf oxide to about 7 eV for the silicate films. After annealing at 1000 °C followed by a 300 °C postmetallization anneal, negligible flat band voltage shift were measured on hafnium silicate films and good interface passivation was observed. However, leakage currents increased due to the high temperature processing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417991
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  • 6
    Electronic Resource
    Electronic Resource
    Coherent magnetization reversal of nanoparticles with crystal and shape anisotropy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 507-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss coherent magnetization reversal in single-domain particles with cubic or uniaxial crystal anisotropy and present the derivation and simulation of the nucleation field in the important case of particles with shape anisotropy and a random orientation of a cubic crystal anisotropy axis. We analyze the interplay of shape and crystal anisotropy as a function of crystal orientation with respect to the applied field. In addition, we present simulations for particles with uniaxial crystal anisotropy and derive the values for remanence and coercive field of an ensemble of particles from calculated hysteresis loops in each case. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323519
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  • 7
    Electronic Resource
    Electronic Resource
    Self-diffusion studies of 15N in amorphous Si3BC4.3N2 ceramics with ion implantation and secondary ion mass spectrometry (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1827-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the range of 1500–1700 °C did not show the typical Gaussian broadening of the implantation profiles. Instead, we observed the occurrence of a high concentration region where the width of the implantation profile is nearly unchanged due to implantation damage, and a low concentration region where diffusion occurs. The experimentally determined diffusivities obey an Arrhenius behavior with an activation enthalpy of about H=7 eV and a pre-exponential factor D0 in the order of 5 m2/s which indicates a diffusion mechanism via vacancy-like defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305903
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  • 8
    Electronic Resource
    Electronic Resource
    Picosecond laser dynamics of gain-coupled and index-coupled InGaAs/InGaAlAs quantum well distributed feedback lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 816-818 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High frequency modulation of gain-coupled (GC) and index-coupled (IC) InGaAs/InGaAlAs distributed feedback (DFB) lasers is investigated. Laser dynamics of conventionally fabricated IC DFB lasers are compared with GC DFB lasers realized by the new technology of masked implantation enhanced intermixing. Band structure dependence of the modulation response at low temperature (T=2K) is analyzed by detuning the emission energy of the DFB lasers with respect to the gain maximum using different grating periods. Pulse widths decreasing from 53 ps down to 4.5 ps with increasing emission energy demonstrate the capability of both coupling types. The experimental results are in excellent agreement with a theory without any fit parameter based on laser rate equations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115453
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  • 9
    Electronic Resource
    Electronic Resource
    New vacuum solutions of conformal Weyl gravity (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 3007-3015 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The Bach equation, i.e., the vacuum field equation following from the Lagrangian L=CijklCijkl, will be completely solved for the case that the metric is conformally related to the Cartesian product of two two-spaces; this covers the spherically and the plane symmetric space–times as special subcases. Contrary to other approaches, we make a covariant 2+2-decomposition of the field equation, and so we are able to apply results from two-dimensional gravity. Finally, some cosmological solutions will be presented and discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.533287
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  • 10
    Electronic Resource
    Electronic Resource
    Ultraviolet laser ablation of polymers: spot size, pulse duration, and plume attenuation effects explained (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5458-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A versatile model for ultraviolet (UV) laser ablation of polymers is presented, which is very successfully applied to the calculation of a variety of different properties of this process, including the influence of plume attenuation dynamics. The polymer is described as a system of chromophores with two possible electronic states. The model is based on the combination of photothermal decomposition and photodissociative bond breaking in the electronically excited state. Laser induced chemical modifications are incorporated via different absorption coefficients for the initial and for the modified polymer after absorption of UV light. Dynamic attenuation of the expanding ablation plume and heat conduction are taken into account. The results of the theoretical calculations are compared with the results of three different series of experiments performed with polyimide (PI) and polymethylmethacrylate at the excimer laser wavelength 248 nm and with PI also at 308 nm: (1) Measurement of the ablation rate as a function of fluence for four different pulse durations between 20 and 250 ns; (2) Measurements of the ablation rate as a function of fluence for five different laser irradiation spot radii between 10 and 150 μm, and (3) Time resolved measurement of the dynamic plume attenuation at the ablating laser wavelength as a function of fluence for four different pulse durations between 20 and 250 ns. The model leads to a prediction of etch rates, ablation thresholds, plume attenuation, and surface temperatures during the ablation process, which is in good agreement with the experimental results. The observed increase of the ablation rate with increasing pulse length and with decreasing laser spot size can be explained by the model as a consequence of laser induced modified absorption in combination with the dynamic shielding of the expanding plume. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367377
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