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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 153-156 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 76-77 (Jan. 2001), p. 43-46 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3001-3011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary ion mass spectrometry has become the preferred tool for impurity profiling primarily due to its excellent depth resolution and high detection sensitivity. Prerequisite in obtaining high detection sensitivity for positive secondary ions is the use of oxygen as primary ions. This leads to a high degree of oxidation of the sample surface, which is essential for a high secondary ion ionization efficiency. Unfortunately, this oxygen bombardment not only leads to the transformation of the original target surface into an oxidized layer but, as the latter requires a certain fluence before stationary state is reached, inherently causes some nonlinearities and transients in the secondary ion signal and the fluence-eroded depth relation. In this work a computer code implantation, sputtering, replacement/relocation, and diffusion (ISRD) has been optimized to predict the compositional changes of the sample surface (or altered layer formation), the sputter yields and the surface regression as a result of the interaction of oxygen beams with Si-targets. This article describes a careful reevaluation of the previously used version of ISRD (and the parameters contained in the program) in order to obtain a systematic agreement with experimental data on sputter yields, altered layer formation, and surface recession, and with other theoretical predictions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 178-182 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm−2. The implantation induced defect states were investigated by temperature dependent conductivity (TDC) as well as by thermal and optical admittance spectroscopy (TAS, OAS) measurements. Dominant carrier emissions having thermal activation energies between 360 and 800 meV were found in TAS and TDC. These states are assigned to implantation induced electron traps since they do not appear in the nonimplanted reference sample. Defect states with similar transition energies were also observed in OAS resulting in an enhancement of defect-to-band transitions in the near band-gap region around 3.45 eV, in the blue band around 3.0 eV, as well as in the midgap range for photon energies between 2.5 and 1.80 eV, respectively. In addition, new transitions were found at 2.1 and 1.95 eV. Furthermore, transitions from implantation induced shallow states were observed, i.e., the magnesium acceptor as well as a new donor level at about 70 meV, tentatively discussed as nitrogen vacancy. The critical ion dose for amorphization was determined to be between 5×1015 and 1×1016 Mg+ cm−2 using x-ray diffraction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 546-548 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In GaN layers grown by molecular beam epitaxy and metalorganic vapor phase epitaxy on c-axis oriented sapphire, a defect-to-band transition at a photon energy of 0.44 eV was found by optical admittance spectroscopy. This transition was investigated as a function of temperature and modulation frequency. The height of the corresponding optical admittance peak shows a thermally activated quenching with an activation energy of 0.4±0.1 eV caused by a thermal carrier emission from the same defect state to the conduction band at higher temperatures. Based on this thermal quenching, the 0.44 eV level is assigned to an electron trap located in the upper half of the gap. The spectral photoionization cross section was determined, resulting in a photoionization energy at 80 K estimated to be below 0.425 eV. The omnipresence of the 0.44 eV electron trap in GaN layers grown by various epitaxial techniques and in different reactors implicates its intrinsic nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1433-044X
    Keywords: Schlüsselwörter Kniegelenk ; Patella ; Endoprothese ; Keywords Knee joint ; Patella ; arthroplasty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract The aim of this study was to evaluate the retropatellar pressure, force, and contact area in cases of knee arthroplasty compared to knees without arthroplasty. We examined six leg specimens before and after knee arthroplasty. The modified Thiel fixation was used, and arthroplasty was the Genesis I without patellar implant (Fa. Smith & Nephew, Schenefeld). Contact measurements were performed with pressure-sensitive film (Fuji Prescale type “super low”) in 45°, 60°, 90°, and 120° knee flexion. The results were evaluated with special software, “Pressure Imaging and Analyzing System FPD-901 Series”. The leg was exarticulated in the hip joint and the knee joint was opened from a suprapatellar approach. The film was placed at a defined area between the facies patellaris of the femur and facies articularis of the patella. Instantaneous pressure was measured during a time of 5-s pressure increase and a further 5 s. A force of 280 N was applied to the quadriceps muscle. Before knee arthroplasty, the contact area measured 154.3 mm2, the average pressure was 1.14 MPa, the force 182.13 N. After knee arthroplasty, the contact area was 119.94 mm2, the average pressure 1.522 MPa, the force 180.98 N. Following knee arthroplasty the contact area decreased significantly (P=0.015), and the average (P=0.0001) and maximum pressure (P=0.0003) increased significantly. The force did not change significantly (P=0.7642). The choice of the knee arthroplasty implant and approach to the knee joint should be considered in order to achieve an increased retropatellar contact area thus preventing smaller contact areas than before knee arthroplasty. The increased contact area could also prevent increasing retropatellar pressures after knee arthroplasty and further complications.
    Notes: Zusammenfassung Ziel der Studie ist die Erfassung von Änderungen des retropatellaren Druckes, der Kraft und den Kontaktflächen durch die Implantation einer Oberflächenkniegelenkprothese. Es wurden 6 Leichen vor und nach Implantation einer Kniegelenkprothese untersucht, die mit der modifizierten Thiel-Fixierung fixiert wurden. Bei dem Implantat handelt es sich um die Prothese Genesis I ohne Patellarückflächenersatz (Fa. Smith & Nephew, Schenefeld). Es wurden Druck- und Flächenmessungen mittels Fuji-Druckmessfolie (Fa. Tiedemann & Betz) vom Typ “super low pressure” vorgenommen. Die Auswertung erfolgte mit der speziellen Software “Pressure Imaging and Analyzing System FPD-901 Series”. Zur Untersuchung wurde das Bein im Hüftgelenk exartikuliert. Über den suprapatellaren Zugang wurde das Kniegelenk eröffnet und die Folie zwischen der Facies patellaris des Femurs und der Facies articularis der Patella an definierter Stelle platziert. Es wurde der momentane Druck gemessen, indem Druck für 5 s ausgelöst und für weitere 5 s aufrechterhalten wurde. Die Untersuchungen erfolgten in 45°, 60°, 90° und 120°. Dabei wurde eine Kraft von 280 N am M. quadriceps ausgeübt. Die Untersuchungen erfolgten an den Kniegelenken vor und nach Prothesenimplantation. Vor Implantation der Knieprothese betrug die Kontaktfläche 154,3 mm3, der mittlere Druck 1,14 MPa, die Kraft 182,13 N. Die Kontaktfläche betrug nach Prothesenimplantation 119,94 mm3, der durchschnittliche Druck 1,522 MPa, die Kraft 180, 98 N. Durch die Prothesenimplantation kam es zu einer signifikanten Verkleinerung der Auflagefläche (p=0,015) und einer signifikanten Erhöhung des durchschnittlichen (p=0,0001) und maximalen (p=0,0003) Druckes. Die Kraft veränderte sich durch die Prothesenimplantation nicht signifikant (p=0,7642). Die Wahl der Implantate und des Zugangweges sollte im Hinblick auf eine Vergrößerung der Kontaktfläche erfolgen, da diese durch die Prothesenimplantation signifikant kleiner wird. Damit kann die auftretende Druckerhöhung auch besser verteilt werden und daraus resultierende Komplikationen reduziert werden.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. Exotic, neutron-rich proton-induced spallation products of 232Th and 238U obtained from the PS Booster ISOLDE facility have been investigated by $\gamma$ - $\gamma$ , $\alpha$ - $\gamma$ coincidence and spectrum-multiscaling measurements. A new method for the reduction of isobaric contamination enabled to study the unknown region beyond 208Pb for the decay chain A = 217. A new isotope 217Bi with a half-life of $98.5 \pm 0.8$ s was discovered and its $\beta$ -decay studied. For the first time, a half-life value of $1.53 \pm 0.03$ s for the $\alpha$ -decay of 217Po was measured.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1434-601X
    Keywords: PACS. 27.70.+q 150 ?A? 189 – 23.60.+e Alpha decay – 32.10.Dk Electric and magnetic moments, polarizability – 32.10.Fn Fine and hyperfine structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Alpha-decay properties of the neutron-deficient isotope 185Pb were studied at the PSB-ISOLDE (CERN) on-line mass separator using the resonance ionisation laser ion source (RILIS). The nuclei of interest were produced in a 1.4 GeV proton-induced spallation reaction of a uranium graphite target. In contrast to previous studies, two α-decaying isomeric states were identified in 185Pb. The relative production of the isomers, monitored by their α-counting rates, could be significantly changed when a narrow-bandwidth laser at the RILIS setup was used to scan through the atomic hyperfine structure. Based on the atomic hyperfine structure measurements, along with the systematics for heavier odd-mass lead isotopes, the spin and the parity of these states were interpreted as 3/2- and 13/2+ and their nuclear magnetic moments were deduced. The α-decay energy and half-life value for the I π = 13/2+ isomer are E α = 6408(5) keV, T 1/2 = 4.3(2) s, respectively; while for the I π = 3/2- isomer ( T 1/2 = 6.3(4) s) two α-decays with E α1 = 6288(5) keV, I α1 = 56(2)% and E α2 = 6486(5) keV, I α2 = 44(2)% were observed. By observing prompt α-γ coincidences new information on the low-lying states in the daughter isotope 181Hg was obtained.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. A new high-spin isomer in 215Bi, with a half-life of 36.9(6) s, has been identified at the PSB-ISOLDE on-line mass separator using the pulsed-release technique combined with the element selective RILIS source. A decay scheme of $^{215{\rm m}}$ Bi was constructed and complemented with the low-spinstructure observed in $^{215{\rm g}}$ Bi decay. The population of a cascade on top of the $\left( \nu g_{9/2} \right)^5_{9/2+}$ level in 215Poprovides evidence for Gamow-Teller $\beta$ -decay of the high-spin 215Bi isomer.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International orthopaedics 24 (2000), S. 191-193 
    ISSN: 1432-5195
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé  6 cadavres ont été examinés après implantation d’une prothèse totale du genou avec et sans implants de restructuration de la surface rotulienne. Les mesures de la pression et de la surface de contact ont été réalisées avec une flexion du genou à un angle de 60°. En comparant les résultats de genoux sans implants et genoux avec implants de la rotule de taille ”petite”, on remarque que ces derniers ont causé une diminution significative de la surface de contact rétro-rotulienne. Les pressions moyenne et maximum n’ont pas changé de manière déterminante. Les implants de taille ”moyenne” ont conduit à une augmentation considérable de la pression maximum et à une diminution significative de la force alors que la surface de contact et la pression moyenne ont elles, légèrement augmenté. Après la pose des deux types d’implants de la rotule on a constatée une réduction significative de la surface de contact, mais ne pas de la pression rétro-rotulienne.
    Notes: Abstract  Total knee replacement with and without patellar resurfacing was performed in 6 cadaver specimens. The contact pressure and contact area between femur and patella was measured at 60° of flexion. In comparison to specimens without resurfacing the specimens with small size resurfacing showed a significant decrease in contact area, whereas average and maximum pressure were unchanged. In specimens with medium size resurfacing, contact area and average pressure increased slightly, whereas maximum pressure increased significantly. Patellar resurfacing did not change the retropatellar pressure, but was associated with reduced contact area.
    Type of Medium: Electronic Resource
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