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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3758-3760 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large increase in the quantum efficiency (QE) and open-circuit voltage Voc of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaSb substrates by organometallic vapor phase epitaxy or molecular beam epitaxy, consists of a 1-μm-thick n-GaInAsSb base layer, a 3-μm-thick p-GaInAsSb emitter layer, a 100-nm-thick AlGaAsSb window layer, and a 25-nm-thick GaSb contacting layer. The band-gap energy of the lattice-matched GaInAsSb is 0.53–0.55 eV. The peak internal QE of the TPV cells with the window is 〉90%, compared with less than 60% for those without the window. At a short-circuit current density of ∼1000 mA/cm2, Voc of ∼300 meV is obtained for cells with the window layer, compared with less than 220 meV without the window layer. These increases are attributed to a substantial decrease in the surface recombination velocity with the window layer. Based on a standard calculation, the electron diffusion length in the p-GaInAsSb layer is at least 5 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2804-2806 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1–2 nm linewidth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2936-2938 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum-well diode lasers incorporating compressively strained InAs0.935Sb0.065 wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm2 at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 332-334 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained quantum-well diode lasers emitting at 3.9 μm have been fabricated. The laser structure, grown on a GaSb substrate by molecular beam epitaxy, consists of compressively strained InAsSb active layers and tensile-strained InAlAsSb barrier layers, surrounded by AlAsSb cladding layers. Broad-stripe lasers have exhibited pulsed operation up to 165 K, with threshold current density of 78 A/cm2 at 80 K. The characteristic temperature is 30 K up to 120 K. The devices operated cw up to 123 K, and the maximum cw power at 80 K is 30 mW/facet. Ridge-waveguide lasers have operated cw up to 128 K, with cw threshold current at 80 K of 35 mA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 876-878 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3153-3155 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity-dependent photoconductive response to 2.06 μm excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85Sb0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3543-3545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained quantum-well lasers emitting at 4.5 μm have been fabricated. The laser structure, grown on a GaSb substrate by molecular beam epitaxy, consists of compressively strained InAsSb active layers and tensile-strained InAlAs barrier layers, surrounded by AlAsSb cladding layers. Under electrical injection, the laser exhibited pulsed operation up to 85 K, with threshold current density of 350 A/cm2 at 50 K. Under optical pumping, the laser operated pulsed up to 144 K, with peak power at 95 K of 0.54 W. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 51 (1996), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 124 (1996), S. 0 
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The central Taupo Volcanic Zone (TVZ) of New Zealand is a region of intense Quaternary silicic volcanism, active since 1.6 Ma. We report palaeomagnetic measurements from 59 distinct volcanic units sampled at 98 sites in the TVZ. These are mainly rhyolitic ignimbrites and lava domes, with a few basaltic, andesitic, and dacitic lavas. Most have new K/Ar or 40Ar/39 Ar ages. The remanent magnetizations are generally stable to both thermal and alternating-field demagnetization, and well-determined mean palaeodirections were obtained for all sites.Our findings suggest that the Taupo, Whakamaru, Maroa, Reporoa, Rotorua, and Okataina volcanic centres were magnetized during the Brunhes normal chron. Kapenga is an older volcanic centre, where activity commenced around 0.89 Ma and extended into the Brunhes. Mangakino volcanic centre is significantly older and was active from 1.6 to 0.95 Ma.Transitional or intermediate palaeodirections were obtained from Ahuroa ignimbrite (1.18 ± 0.02 Ma) and Mamaku ignimbrite (0.22 ± 0.01 Ma). The former almost certainly corresponds to the Cobb Mountain Event. The latter is significantly older than the Blake Event, and probably corresponds to the recently reported Pringle Falls/Summer Lake magnetic episode.Multiple sites from the Whakamaru ignimbrite have indistinguishable 40Ar/39 Ar ages (0.33 ± 0.01 Ma) and glass composition, but divergent palaeomagnetic directions. This contrast suggests that either (1) the different sites were formed during a phase of extremely violent activity, lasting up to a few hundred years, during which geomagnetic secular variation was recorded; or (2) that they were formed in a single eruption, and rotation during subsequent extensional tectonism has caused divergence of the palaeodirections. 40Ar/39Ar ages of 0.77 ± 0.03 Ma for the reversely magnetized Rahopeka ignimbrite and 0.71 ± 0.06 Ma for the overlying normally magnetized Waiotapu ignimbrite bracket and constrain the age of the Maluyama-Brunhes transition.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 27 (1997), S. 0 
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background It seems plausible that children with atopy and persistent asthma symptoms will, like their adult counterparts, have chronic airways inflammation. However, many young children with no other atopic features have episodic wheezing that is triggered solely by viral respiratory infections. Little is known as to whether airways inflammation occurs in these two asthma patterns during relatively asymptomatic periods.Methods Using a non-bronchoscopic bronchoalveolar lavage (BAL) procedure on children presenting for an elective surgical procedure, this study has investigated the cellular constituents of BAL fluid in children with a history of atopic asthma (AA) non-asthmatic atopic children (NAA) or viral associated wheeze (VAW).Results A total of 95 children was studied: 52 with atopic asthma (8.0 years, range 1.1–15.3, 36 male), 23 with non-asthmatic atopy (median age 8.3 years, range 1.7–13.6, 11 male) and 20 with VAW (3.1 years, range 1.0–8.2, 13 male). No complications were observed during the lavage procedure and no adverse events were noted post-operatively. Total lavage fluid recovered was similar in all groups and the total cell numbers were higher in the VAW group. Eosinophil (P≤ 0.005) and mast cell (P≤ 0.05) numbers were significantly elevated in the group with atopic asthma.Conclusions During relatively asymptomatic periods there is on-going airways inflammation, as demonstrated by eosinophil and mast cell recruitment, in children with asthma and atopy but not in children with viral associated wheeze or atopy alone. This strongly suggests that there are different underlying pathophysiological mechanisms in these two groups of children who wheeze.
    Type of Medium: Electronic Resource
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