Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 6178-6185
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0〈x〈0.4. The studied ZnSexTe1−x epilayers with thicknesses of about 1.5 μm were grown on GaAs substrates by metalorganic vapor phase epitaxy. It was found that the luminescence and reflectivity spectra of the mixed crystals are strongly affected by the compositional disorder. A continuous transition from the recombination through free and bound exciton states to the recombination of excitons localized by the compositional fluctuations of the mixed crystal was observed in the concentration region of about x=0.25. The position of the excitonic band edge was derived from the photoluminescence excitation spectra and from temperature dependence of the emission spectra.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.355186
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