ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8×1021 to 2.4×1023 cm−3 s−1, while the illumination temperature was kept at 30 or 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109551
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