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  • Digitale Medien  (15)
  • 1990-1994  (4)
  • 1985-1989  (11)
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  • Digitale Medien  (15)
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  • 1
    Digitale Medien
    Digitale Medien
    Trapping of hydrogen impurities in helium-implanted niobium and tantalum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7770-7773 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Trapping of hydrogen impurities at helium precipitates in helium-implanted niobium and tantalum has been studied. The samples were implanted at room temperature with 100 keV 4He+ ions to doses of (0.6–36)×1016 cm−2. Some of the samples were postirradiated with 60 keV and 4 MeV protons, and annealed at elevated temperatures up to 1070 K. The helium and hydrogen concentration distributions were characterized simultaneously using the elastic-recoil-detection-analysis technique. The hydrogen distributions were also measured by the nuclear resonance reaction 1H(15N,αγ) 12C. The observed hydrogen distributions show that defect-hydrogen complexes at He bubbles are built from the ion-irradiation-induced and pre-existing vacancies and pre-existing hydrogen impurities migrated to the associated internal surfaces and that the hydrogen impurities saturate the surfaces. Recovery energies of about 2.1 eV in Nb and about 2.7 eV in Ta were observed for the hydrogen trapping defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356611
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  • 2
    Digitale Medien
    Digitale Medien
    Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341541
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  • 3
    Digitale Medien
    Digitale Medien
    Diffusion of aluminum in ion-implanted α-Ti (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 613-614 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diffusion of Al in polycrystalline ion-implanted α-Ti has been studied in the temperature range 600–850 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 27Al(p,γ) 28Si reaction. The effect of the implantation energy and implanted dose on the diffusivity of Al has been investigated. The value of 1.62±0.11 eV for the activation energy and (7.4±9.8)×10−7 cm2/s for the frequency factor was obtained. The present result is discussed in the framework of the Ti diffusion barrier used in semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334747
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  • 4
    Digitale Medien
    Digitale Medien
    Redistribution of implanted H in annealings of n-type GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2334-2336 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Depth profiles of 60- and 100-keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si-doped n-type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation-induced defects. The migration of H-atom-defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341664
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  • 5
    Digitale Medien
    Digitale Medien
    Mixing of Al in Si by Ne+ ions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3246-3248 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion-beam mixing has been studied for the case where all components are collisionally similar. In this study a thin Al marker was mixed by implanting 40-keV 22Ne+ into electron-beam-evaporated Si. The mixing was studied with the nuclear resonance broadening technique. It is characterized by a broadening that is proportional to the square root of ion fluence. The data obtained at room temperature, where the negligible solubilities and thermal diffusivities do not contribute to the intermixing of Al and Si, indicate that even in the absence of the long-range transport there is a diffusion mechanism which enhances the mixing with a magnitude some 3–6 times that expected for ballistic mixing. The data is applicable for preparing Al/Si contacts by Al implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335806
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  • 6
    Digitale Medien
    Digitale Medien
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346566
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  • 7
    Digitale Medien
    Digitale Medien
    Nitrogen implantation of metals (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1423-1425 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sixteen metals implanted to saturation with 300-keV N2+ ions have been studied using nuclear resonance broadening and Rutherford backscattering techniques to profile the implanted concentration. Blisters due to the implanted nitrogen were observed in Mg, Al, Ti, V, Cr, Nb, Mo, Ta, W, and AISI 304 steel but not in Cu, Zr, Ag, Hf, and Au. The nominal saturation concentration at maximum varied from 50 to 60 at. % for all cases except for Cu, Ag, and Au, where it was 20 at. %. The surface hardness was generally increased by a factor between 1.2 and 2.3. However, no increase was observed for Mo, Ag, and Au. The mononitride formation in Ti, Zr, and Hf was verified by x-ray diffraction. The formation of blisters and diffusion in the preparation of nitrides is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334504
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  • 8
    Digitale Medien
    Digitale Medien
    Defect formation in implantation of crystalline Si by MeV Si ions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 990-995 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The distributions of vacancy-type defects and displaced Si atoms in Si(100) produced by the room-temperature implantation of 1014–1016 12-MeV 28Si+ ions/cm2 are measured with low-energy positron- and ion-beam techniques. The observed damage regions are reproduced by computer simulations. The distribution of displaced Si atoms coincides with the deposited energy distribution in elastic collisions. At the fluence of 1×1016 Si+/cm2, no crystalline structure was found in the peak region of the deposited energy at the depth of z=6 μm. Saturation of the divacancy concentration was observed at the ion fluences 3×1015 Si+/cm2 close to the surface (z〈0.7 μm) and 3×1014 Si+/cm2 deeper in the sample (z〉1 μm). In the region z〈0.7 μm, the divacancy concentration is a factor of 4 higher than that in the region z〉1 μm. This is also found in the simulated spatial structure of collision cascades.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345709
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  • 9
    Digitale Medien
    Digitale Medien
    New approach to growth of high-quality GaAs layers on Si substrates (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the defect density near the GaAs/Si interface and in the bulk of these films was observed when the buffer layer was deposited by alternately supplying Ga atoms and As4 molecules to the substrate, rather than applying conventional MBE. Possible reasons for this reduction of crystal defects are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98527
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  • 10
    Digitale Medien
    Digitale Medien
    Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 973-974 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98780
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