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  • 1
    Electronic Resource
    Electronic Resource
    Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 53-58 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.185-188.53.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of Grain Boundaries of Al-doped Sintered β-SiC by Both HRTEM and STEM (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 294-296 (Nov. 1998), p. 269-272 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.294-296.269.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Ia-expressing microglial cells in experimental allergic encephalomyelitis in rats (1989)
    Springer
    Acta neuropathologica 77 (1989), S. 472-479 
    Details
    ISSN: 1432-0533
    Keywords: Major histocompatibility complex ; Ia antigens ; Microglia ; Experimental allergic encephalomyelitis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Monoclonal antibodies (MRC OX-6 and OX-17) recognized three types of cells expressing Ia antigen during the course of acute experimental allergic encephalomyelitis (EAE) in rats. In earlier stages of the disease, in animals with or without paralysis, Ia antigens were mostly localized to subarachnoidal and perivascular lymphocytic and histiocytic cell infiltrates, possibly serving as antigen-presenting cells. On the other hand, in convalescent rats, Ia antigens were expressed in a large number of cells with dendritic processes heavily populating the spinal gray matter. The appearance of these Ia-expressing cells in the convalescent stage coincided with the development of degenerating axon terminals in the spinal gray matter. These Ia-expressing cells possessed morphological features characteristic of microglia and were positive for ML-1 lectin but did not express glial fibrillary acidic protein. Immune electron microscopy disclosed the presence of Ia reaction products in the Golgi apparatus, endoplasmic reticulum and plasma membrane of these cells with dendritic processes, indicating active synthesis of Ia molecules in microglia. In addition, Ia antigens were localized to the cells with ultrastructural features of macrophages. Thus, Ia-expressing cells in EAE seems to play dual roles: the induction of immunological reactions during earlier stages and the participation in reparative processes during convalescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00687248
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  • 4
    Electronic Resource
    Electronic Resource
    High Energy Si, Zn and Ga Ion Implantation into GaAs on Si (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1881-1886 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1881.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Photoaffinity Labeling of Adenylate Cyclase-Linked Serotonin Receptors in Aplysia Neurons (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 49 (1987), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Serotonin stimulated adenylate cyclase in Aplysia neurons with a Kact of 0.7 μM. Under the same conditions, 1 -[2-(4-aminophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine stimulated adenylate cyclase with a Kactof 20 μM. The azido derivative of this compound, 1-[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine, or of serotonin, (4-amino, 3-nitrophenylazido-serotonin), also stimulated the cyclase in the dark, but with lower efficiency (Kact 〈 10−4M). Irradiation of the membranes in the presence of 100 μM 1-[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine abolished 75% of the cyclase activity stimulated by 5 μM serotonin. Under the same conditions, 100 μM 4-amino, 3-nitrophenylazido-serotonin did not inhibit serotonin-stimulated adenylate cyclase activity. When [3H] 1 -[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine (20 μM) was irradiated with membranes for 5 min at 4°C, a dozen peptides were labeled, as revealed by a fluorogram of sodium dodecyl sulfate-polyacrylamide gels. Among them, the labeling of five polypeptides (molecular weights of 45,000, 55,000, 63,000, 80,000, and 94,000) was protected by the presence of 0.2 mMserotonin during photolysis. These peptides may be related to serotonin receptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1987.tb01000.x
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  • 6
    Electronic Resource
    Electronic Resource
    Dynamics of GaAs surfaces exposed to argon and hydrogen electron-cyclotron-resonance plasmas observed by real-time optical reflection spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5987-5994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of the interaction of electron-cyclotron-resonance (ECR) plasmas with the surface of GaAs substrates are studied by real-time optical reflection spectroscopy. Analysis with a three-phase ambient/overlayer/substrate model yields information on the time-dependent composition of the near-surface region, such as the thickness, degree of amorphization, and oxide and void fraction in the overlayer. Using this technique, it is observed that the thickness of the damaged layer formed by the impact of energetic ions increases linearly with the ion energy during argon ECR sputter etching. Furthermore, the dynamics of a cleaning process with a hydrogen ECR plasma have been studied. At temperatures between 300 and 500 °C this cleaning can be characterized by a two-step process. During the first few seconds of exposure, the oxide layer is removed; in the second step, the GaAs is etched gently, which leads to a surface region with little damage to the crystal. At lower temperatures, cleaning is not successful and a thick damaged overlayer is formed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359182
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenated amorphous silicon by capacitance-voltage and surface photovoltage measurements using liquid Schottky barriers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1916-1927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been made on the electrical properties of hydrogenated amorphous silicon (a-Si:H) using liquid Schottky barriers. We have found that the quasi-static capacitance-voltage (C-V) method can be applied to the a-Si:H/quinone-hydroquinone (Q-HQ) liquid Schottky junction. This method enables us to determine the net density of positive space charge due to ionized traps and impurities in a-Si:H (Ne), the built-in potential (Vb), and the width of the surface space-charge layer (W), of this liquid junction. The barrier height of an undoped a-Si:H/Q-HQ junction has been estimated to be more than 1 eV from the value of Vb thus obtained. By C-V and surface photovoltage (SPV) measurements on the same samples, we have studied the changes in the properties of a-Si:H with doping and with prolonged illumination. It has been found that phosphorous (P) doping drastically decreases the hole diffusion length measured by the SPV method and increases the value of Ne. Slight boron (B) doping increases the ambipolar diffusion length L1 and the field assisted carrier collection length L2, both of which have been determined by SPV. These results explain the observed enhancement of the photovoltaic properties of a-Si:H p-i-n solar cells with the slight B doping to the i layers. The values of L1 and L2 have a distinct correlation with the photo-voltaic properties in the slightly B-doped samples, which has confirmed the effectiveness of the SPV method in characterizing a-Si:H as a photovoltaic material. We have found that the increase in Ne and the decrease in L1 occur simultaneously in undoped a-Si:H with prolonged illumination. On the other hand, the increase in Ne does not always accompany the decrease in L1 in the photoinduced changes in P-doped or slightly B-doped a-Si:H, which suggests the difference in the mechanism of the changes between undoped and doped samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338038
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  • 8
    Electronic Resource
    Electronic Resource
    Stability of CdSe and ZnSe dots self-organized on semiconductor surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3886-3888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several monolayers (ML) of CdSe were deposited on (001) GaAs surfaces to study the stability of the CdSe films. The CdSe film with the 2 ML thickness showed atomically flat surfaces just after the growth. However, in three days after the growth, self-organization into dots at room temperature was clearly observed. This unexpected self-organization of dots observed at room temperature from the once coherently-grown CdSe film will be closely correlated to the enhancement of the heterointerface diffusion observed in this combination of CdSe and GaAs. This correlation between the stability of the dots and the heterointerface diffusion was examined in the common cation case of ZnSe/ZnS, which is known to show low interface diffusion. Self-organization of ZnSe dots was observed with an atomic force microscope on (001) ZnS surfaces. The ZnSe dots were stable as expected and did not show instability such as observed for the CdSe dots on GaAs or on ZnSe. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120534
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature-dependent dry cleaning characteristics of GaAs (111)B surfaces with a hydrogen electron cyclotron resonance plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non-Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near-surface crystalline quality of GaAs (111)B remains higher than that of (100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113457
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  • 10
    Electronic Resource
    Electronic Resource
    Self-field ac losses in biaxially aligned Y–Ba–Cu–O tape conductors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2695-2697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-field ac losses were measured by the conventional ac four-probe method in biaxially aligned Y–Ba–Cu–O tapes using polycrystalline Hastelloy tapes with textured yttria-stabilized-zirconia buffer layers. The ac losses increased in proportion to the fourth power of transport current in the high Jc sample, and agreed well with Norris' equation for thin strip conductors. However, the low Jc sample had rather higher losses than Norris' prediction, suggesting excessive magnetic flux penetration caused by percolated current paths. The results confirmed Norris' prediction of the low ac losses for thin strip conductors, and indicated the importance of removing percolated structures of current paths to avoid higher ac losses than the theoretical predictions based on uniform conductors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120180
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