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  • 1985-1989  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Titanium and carbon coimplantation into sintered α-SiC and hot-pressed Si3N4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1885-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered α-SiC and hot-pressed Si3N4 were coimplanted with 175 keV Ti+ and 46 keV C+ at doses of 1×1017 cm−2. Energies of Ti+ and C+ were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross-section transmission electron microscopy. The distribution of Ti in α-SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross-section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342924
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Mixing of Pt-René N4 alloy under Pt+ bombardment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2257-2259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mixing rates of the Ni-Pt and René N4-Pt systems under high-energy ion bombardment were measured using Rutherford backscattering spectroscopy. The mixing was induced by various fluences of 1-MeV Pt+ ions. The extent of mixing in René N4-Pt was the same as in Ni-Pt, suggesting the absence of any effects of high voume fraction of ordered second phase (gamma prime) on the mixing phenomenon in the former system. The amounts of mixing predicted by the model based on thermochemical effects were very close to those measured, while cascade collision theory could account for only 2%–3% of the mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341064
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-energy ion irradiation effects on the surfaces of silicon carbide and silicon nitride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4791-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy ion irradiation effects on the surfaces of α-silicon carbide (SiC) and hot-pressed silicon nitride (Si3N4) were studied by optical microscopy, surface profilometry, Auger electron spectroscopy, and transmission electron microscopy (TEM) techniques. Optical microscopy and surface profilometry revealed that 1-MeV Ni+ ion irradiation at a dose of 1×1016 cm−2 produces swelling and roughness on both SiC and Si3N4. Auger electron spectroscopy in combination with sputtering revealed that the SiC surface becomes C rich, whereas the Si3N4 surface becomes Si rich due to ion irradiation. Cross-section TEM analysis of the surface layer of irradiated SiC showed that about 1 μm of material at the surface has become amorphous due to irradiation with 1-MeV Ni+ at a dose of 1×1016 cm−2. Amorphization has also been observed in Si3N4. These results are discussed with reference to the information available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338339
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: Ion-beam mixing of Ni-Mo and Ni-Ti binary systems [J. Appl. Phys. 58, 248 (1985)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2798-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336317
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam mixing of metallic and insulating layers on SiC and Si3N4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5263-5266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing of B, ZrO2, and Cr layers with sintered α-SiC, and Y and Cr layers with hot pressed Si3N4 was measured at room temperature. The mixing ion was selected from 1-MeV Ni+, 2-MeV Au+, or 1-MeV O+ ions. The amount of mixing was evaluated from Rutherford backscattering and Auger electron spectroscopies and occasionally from cross-section transmission electron microscopy. It was found that mixing takes place in the B/SiC, Cr/SiC, and Y/Si3N4 systems. No mixing is observed in the ZrO2/SiC and Cr/Si3N4 systems even after high dose ion bombardment. The enthalpy of mixing rule, which states that metals mix with insulators if the reaction enthalpy is negative and do not mix if it is positive, has been examined and found to hold for these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338312
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of Ni-Mo and of Ni-Ti binary systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 248-252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy and Rutherford backscattering techniques were employed to study the mixing rates of NiMo and NiTi binary systems under high-energy ion bombardment. Mixing was carried out by using 1-MeV Au+ ions at various doses. Results show that the amount of mixing of NiTi is about three times higher than NiMo. Cascade collision theory can only account for a maximum of 20% difference in the amount of mixing of these two systems. However, a model based on thermodynamics has been found to predict correctly the amount of mixing of these two systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335719
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction of TiW film with GaAs (1986)
    Springer
    Journal of materials science 21 (1986), S. 1675-1680 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interactions of co-evaporated Ti0.3W0.7 films with GaAs have been studied after annealing at temperatures in the range of 650 to 900° C for 15 min employing Rutherford backscattering, transmission and scanning electron microscopy. X-ray diffraction and energy-dispersive X-ray analysis techniques. Reaction has been found to take place at 650° C as evidenced by the presence of an AsTi compound in the region near the interface of TiW film and GaAs. Gallium diffuses out to the surface at temperatures above 750° C and causes surface morphological degradation, which can be related to the instability of the TiW Schottky barrier height at higher temperatures ≳750° C as reported in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01114724
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam mixing of Pt with René N4 alloy (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 131-134 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion mixing was studied in Pt-René N4 alloy system. The substrate, René N4, is a nickel-base superalloy with about 66% of ordered γ′ precipitates by volume. The average precipitate size is approximately 0.42 μm. Mixing was accomplished by 1 MeV Pt+ ions at two different doses and followed by Rutherford back scattering and Auger sputter profiling. Mixing was significantly slower in this system than it was in Pt/Ni binary alloy suggesting a possible strong influence of alloy chemistry, microstructure or intermediate impurity layer on the mixing process.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100212
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Application of cross-sectional transmission electron microscopy in the characterization of ion beam processed materials surfaces (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 142-148 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion-beam-mixing-induced amorphization of Ni—Ti bilayered thin film and the amorphization of α-SiC through ion bombardment have been studied by employing cross-sectional transmission electron microscopy techniques. Rutherford backscattering analysis was employed to monitor the mixing of Ni—Ti bilayer as a function of dose (3 × 1015-2 × 1016 ions cm-2) of 1 MeV Au+ ions. It has been observed that amorphization starts at the interface as the mixing proceeds. Formation of a buried amorphous layer was obtained in α-SiC by ion bombardment with 2.5 MeV Ni+ at a dose of 1 × 1016 ions cm-2. Double energy implants (1 MeV Ni+, 1 × 1016 ions cm-2+2 MeV Ni+, 1 × 1016 ions cm-2) were employed to obtain 1.8 μm thick continuous amorphous layer on the surface of α-SiC. Also, in the present investigation, it has been shown that α-SiC pieces with amorphous surface layers joined better than those with as received crystalline surface layers.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100214
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    Paper (German National Licenses)
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