ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The results of an investigation into the redistribution of dopants—As, B, and P—during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341333
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