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  • 1
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 8 (1978), S. 0 
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Simultaneous determination of CEA, AFP and ALP4 was made in patients with various gynecological malignancies. CEA was positive in 65%, AFP was positive in 1.8% of 55 cases with cervical carcinoma stage 0—-II. ALP4 was positive in one patient in these stages. In the group of cervical carcinoma stage III, stage IV and recurrence, CEA and AFP were positive in 100% and in 8.6% of 35 cases respectively. ALP4 was positive in 14.3%. High levels and/or progressively increasing CEA with positive ALP4 were found to be significant in poor prognostic patients in whom ALP4 was not always found positive. Out of 17 cases with endometrial carcinoma, CEA was positive in 12 patients. AFP and ALP4 were each positive in one case. Of 30 cases with ovarian carcinoma, CEA was positive in 70%, AFP in 23% and ALP4 in 14%. Increasing CEA and/or increasing AFP appeared to be correlated with poor prognosis. In the group of 5 vulvar carcinoma, only CEA was positive in 80% of the patients. Of 19 cases of choriocarcinoma, CEA was positive in 11%, AFP was positive in 5.3% and ALP4 was positive in 5.6%. There existed reverse-correlation between serum CEA and AFP in some cases.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 21 (1980), S. 257-261 
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-1920
    Keywords: Anterior inferior cerebellar artery ; Internal carotid artery ; Persistent primitive trigeminal artery ; Carotid angiography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Two cases of the anterior inferior cerebellar arteries originating from the cavernous and precavernous segments of the internal carotid artery are reported. In one case the course of the anomalous artery was confirmed by autopsy. This anomalous artery is considered to be a variant of persistent primitive trigeminal artery. The clinical significance is discussed briefly.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 16 (1981), S. 927-934 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Continuous observation of dislocation motion on the specimen surface of IIb–VIb semiconducting compounds (CdS and CdTe) has been made using a scanning electron microscope (SEM) with the cathodoluminescence (CL) by use of a deformation apparatus installed in the SEM chamber. With the application of stress, SEM-CL patterns revealed an increasing density of dark spots that formed dark stripes along slip traces. For both CdS and CdTe crystals, regardless of the slip system involved, the dark spots corresponding to individual dislocations appeared in the SEM field without displaying their moving state and seldom disappeared, indicating that dislocations are immobilized after they travel a certain distance from the source with a high velocity. The investigation of slip-band growth in CdS showed that screw bands on the basal plane exhibit the photoplastic effect, whereas those on the prismatic plane do not, in accordance with the macroscopic deformation tests.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 11 (1976), S. 1542-1566 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Over the past 15 years important advances have been made in the experimental study of the microstructural changes occurring during the non-linear steady-state creep of single phase crystalline matter at elevated temperatures. Curiously, although the results of these painstaking studies have gone a long way toward elucidating the mechanism of this phenomenon, they have been largely ignored in favour of some simple dislocation mechanisms that are not only inconsistent with these observations, but are also unable to describe correctly the known phenomenology. This review concentrates primarily on the recent experiments on microstructural alterations occurring during creep; however, it also surveys the many mechanistic models that attempt to describe this phenomenon, and finds them all deficient.
    Type of Medium: Electronic Resource
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