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  • 1995-1999  (14)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    High-power (〉10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1182-1184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By incorporating a broad transverse waveguide (1.3 μm) in 0.97-μm-emitting InGaAs(P)/InGaP/GaAs separate-confinement-heterostructure quantum-well diode-laser structures we obtain record-high continuous-wave (cw) output powers for any type of InGaAs-active diode lasers: 10.6–11.0 W from 100-μm-wide-aperture devices at 10 °C heatsink temperature, mounted on either diamond or Cu heatsinks. Built-in discrimination against the second-order transverse mode allows pure fundamental-transverse-mode operation (θ⊥=36°) to at least 20-W-peak pulsed power, at 68×threshold. The internal optical power density at catastrophic optical mirror damage (COMD) P¯COMD is found to be 18–18.5 MW/cm2 for these conventionally facet-passivated diodes. The lasers are 2-mm-long with 5%/95% reflectivity for front/back facet coating. A low internal loss coefficient (αi=1 cm−1) allows for high external differential quantum efficiency ηd (85%). The characteristic temperatures for the threshold current T0 and the differential quantum efficiency T1 are 210 and 1800 K, respectively. Low differential series resistance Rs: 26 mΩ; leads to electrical-to-optical power conversion efficiency values in excess of 40% from 1 W up to 10.6 W cw output power, and as much as 50% higher than those of 0.97-μm-emitting Al-containing devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122122
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A second-order diffraction grating placed below the active region of a phase-locked resonant antiguided array selects the in-phase array mode in addition to its role as a single-longitudinal-mode selector. This type of array-mode discrimination relies on the fact that the resonant in-phase array mode has significantly better field overlap with the grating region than nonresonant array modes. Furthermore, it eliminates the need for a conventional array-mode discriminator: interelement loss; which can cause self-pulsations. Diffraction-limited beam and single-frequency operation is obtained to at least 0.45 W peak pulsed power from 20 element, InGaAs/InGaP/GaAs structures (λ=0.97 μm) of 120-μm-wide aperture. Distributed-feedback operation is confirmed over the 20–40 °C temperature range. The results are in good agreement with theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121864
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-performance, reliable, 730-nm-emitting Al-free active region diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2869-2871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (αi∼2 cm−1) and narrow transverse far-field beam width (θ1/2=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T0=115 K and T1=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122613
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  • 4
    Electronic Resource
    Electronic Resource
    14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1142-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wide-stripe, 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs broad-waveguide separate confinement heterostructure quantum-well lasers demonstrate a record value for quasicontinuous wave (QCW) output power: 14.3 W (100-μm-wide stripe, 100 μs-wide pulses); and reach catastrophic optical mirror damage (COMD) in QCW operation at an optical power density of 22.5 MW/cm2; that is, 40% higher than COMD levels in cw operation. The devices have low internal losses (αi=1 cm−1) and high external differential quantum efficiency (86% for 2-mm-long lasers), and exhibit only 10–20 °C temperature rises in the active region at 10 W QCW power. We also show that long-cavity, large-contact-area devices exhibit relatively little spectral broadening with increased output power. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119847
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  • 5
    Electronic Resource
    Electronic Resource
    5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 172-174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power, 0.81-μm-emitting, semiconductor diode lasers are used as pump sources for Nd:YAG solid-state lasers. Devices (1-mm-long) consisting of a InGaAsP/In0.5(Ga0.9Al0.1)0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure provide a threshold-current density, Jth, of 290 A/cm2 and a relatively high threshold-current characteristic temperature, T0 (140 K). Uncoated diode lasers (1.2-mm-long) have a maximum continuous wave output power of 5 W (both facets) at 20 °C. The internal power density at catastrophic optical mirror damage (COMD), P¯COMD, is determined to be 9.1 MW/cm2; that is, 1.8 times that for GaAs-active layer, Al-free, uncoated devices. Coated, InGaAsP-active devices are expected to have P¯COMD=18 MW/cm2, more than twice the P¯COMD of AlGaAs-active, 0.81-μm-emitting devices with the same emitting aperture. Therefore, 0.81-μm-emitting, InGaAsP-active diode lasers should operate reliably at powers at least twice those of AlGaAs-based devices with the same contact-stripe geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119528
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers'' [Appl. Phys. Lett. 69, 1532 (1996)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3437-3437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118163
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  • 7
    Electronic Resource
    Electronic Resource
    Above-threshold behavior of high-power, single-mode antiresonant reflecting optical waveguide diode lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Above-threshold analysis of antiresonant reflecting optical waveguide (ARROW) diode lasers has been performed. One key finding is that preferential pumping of the (central) low-index core region dramatically enhances the device single-mode power capability, as a result of defocusing and subsequent radiation-loss increase for the first-order spatial mode. Stable, single-mode operation to drive levels (approximately-greater-than)10× threshold is predicted for 6-μm wide core devices, in excellent agreement with experiment. Similar performance is found to hold true for ARROW devices with cores as wide as 10 μm, although due to gain spatial hole burning, the far-field beam pattern experiences mild broadening. Study of triple-core ARROW structures of 20-μm-wide aperture shows stable fundamental-mode operation to (approximately-greater-than)10× threshold, thus raising the prospect for stable, single-mode reliable operation to power levels as high as 1 W cw. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114152
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  • 8
    Electronic Resource
    Electronic Resource
    High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2901-2903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 3 W cw output power has been obtained from aluminum-free, strained-layer double-quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated, 100-μm-wide stripe diode lasers (λ=0.945 μm) grown by low-pressure MOCVD on exact (100) GaAs substrates. The combination of high-band-gap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current Ith as well as the external differential quantum efficiency ηd. Furthermore, the series electrical resistance for 100 μm×600 μm stripe-contact devices is as low as 0.12 Ω. As a result, the power conversion efficiency reaches a maximum of 40% at 8×Ith, and decreases to only 33% at the maximum power (i.e., 3 W) at 28×Ith. Low-temperature (12 K) photoluminescence measurements of InGaAs/InGaAsP quantum-well structures exhibit narrow linewidths (〈10 meV) for material grown on exact (100) GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of "step bunching.'' Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both Ith and ηd, compared with structures grown on exact (100) substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114836
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  • 9
    Electronic Resource
    Electronic Resource
    1.1 W continuous-wave, narrow spectral width (〈1 Å) emission from broad-stripe, distributed-feedback diode lasers (λ=0.893 μm) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2072-2074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By etching a distributed-feedback grating directly into the Al-free optical confinement region of a 100 μm stripe InGaAs/InGaP/GaAs diode laser, 1.1 W cw front-facet output power has been obtained at 0.893 μm with a spectral full width at half maximum of 0.9 Å. These devices have 1 mm long cavities and shallow gratings with a coupling coefficient, κ∼7 cm−1. The combination of long device length and low grating coupling results in both efficient operation as well as a longitudinally uniform field profile. As a result, all excited lateral modes oscillate at the same longitudinal cavity resonance to high power levels. Using shallow gratings etched in an InGaP upper confinement layer permits the growth of a high-quality cladding layer over the grating surface yielding excellent device performance. Facet-coated (5%/95%) devices demonstrate external differential quantum efficiencies of 51% and peak wallplug efficiencies of 32% at 1.1 W cw output power. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122381
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  • 10
    Electronic Resource
    Electronic Resource
    730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.73-μm-emitting, Al-free active-region, strained (Δa/a(approximate)1.4%) InGaAsP single-quantum-well diode lasers have been grown by low-pressure metal–organic chemical-vapor deposition. A broad waveguide laser design with In0.5(Ga0.5Al0.5)0.5P cladding layers is utilized to achieve a large effective transverse spot size (d/Γ=0.433 μm) and to minimize carrier leakage from the active region. Threshold current densities of 514 A/cm2 (100-μm-wide stripe, L=1 mm), external differential quantum efficiencies of 60%, and characteristic temperature coefficients for the threshold current, T0, and external differential quantum efficiency characteristic temperature, T1, have values of 72 and 153 K, respectively. Continuous wave output powers of 1.4 W are obtained from facet-coated (90%/10%) devices operating at 735 nm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120831
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