ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, whichwas recently found from the real time monitoring experiments of the initial oxidation stage of SiC(000–1) C-face using an in-situ spectroscopic ellipsometer, we tried to apply the interfacial Siemission model, which has been originally proposed for Si oxidation, and found that the Si emissionmodel successfully reproduced the SiC oxidation rates at the whole range of oxide thickness and atoxidation temperatures measured. By comparing with the simulations for Si oxidation, we havediscussed the oxidation mechanism of SiC
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.663.pdf
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