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  • 1
    Digitale Medien
    Digitale Medien
    Diffusion of Sb, Ga, Ge, and (As) in TiSi2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5335-5345 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Gallium, Sb, and Ge were implanted into thick (about 400 nm) layers of TiSi2 prepared by metal-silicon reaction. The diffusion of the implanted atoms was analyzed by means of secondary ion mass spectrometry. Gallium was introduced because a former study had shown that the usual p-type dopant B does not diffuse in TiSi2. Germanium was used in lieu of a Si tracer. Its diffusion characteristics are compared to those of P and As (as well as Si) which had been investigated previously. Germanium and Ga diffuse readily above 600 °C, but Sb does not. Its diffusion appears to be limited to grain-boundary effects. Accumulations of the diffusing atoms are observed (except for Sb) at the silicide-silicon interface. These are due to kinetic effects, namely fast diffusion at grain boundaries and interfaces, rather than to real adsorption which is an equilibrium condition. Because diffusion in intermetallic compounds has been shown to be significantly affected by variations in stoichiometry, experiments were conducted with films implanted not only with foreign atoms but with Ti as well. These did not lead to significantly different observations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340399
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  • 2
    Digitale Medien
    Digitale Medien
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342666
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  • 3
    Digitale Medien
    Digitale Medien
    Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4975-4986 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a detailed deep level transient spectroscopic study in p-type Mg- and Zn-doped GaAs epitaxial layers grown by metal-organic vapor phase epitaxy. Dependence of deep level structures on doping concentrations and growth temperatures has been investigated. Over a wide range of growth conditions, four hole traps and an electron trap ranging in activation energy from 0.18–0.79 eV were measured in GaAs:Mg while only a single hole trap has been observed in GaAs:Zn.The presence of a certain trap and its concentration in GaAs:Mg depends mainly on the doping concentration in the layers. The total trap concentration in the GaAs:Mg decreases rapidly with doping concentration for p〉4×1017 cm−3. The physical and chemical origins of several of these traps have been identified. The Mg-doped GaAs always exhibited a greater concentration of midgap trap levels than the Zn-doped material, regardless of dopant concentration or growth temperature. The overall defect structure and dopant incorporation characteristics indicate that Zn is the preferred dopant species.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342447
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  • 4
    Digitale Medien
    Digitale Medien
    Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2046-2053 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-9% Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341106
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  • 5
    Digitale Medien
    Digitale Medien
    Dopant redistribution at Si surfaces during vacuum anneal (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4619-4625 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p-type dopants is found to occur. The p-type dopant is identified by SIMS and by its diffusion characteristics as being boron. The measured doping profiles can be interpreted as indicating that the chemically cleaned surface contains boron impurities in the 1012/cm2 range that become electrically activated and diffuse into the substrate during high-temperature anneals. It is concluded that the boron exists initially in an oxidized state at the surface. Borosilicate parts present in any standard ultrahigh vacuum system are identified as a source of the pollution.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338372
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  • 6
    Digitale Medien
    Digitale Medien
    The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2156-2160 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Secondary ion mass spectroscopy has been used to quantitatively determine the carbon concentration in nominally undoped GaAs grown by metalorganic vapor phase epitaxy from TMG (13C 99%) and AsH3. Both an increase in the V/III ratio and the addition of supplemental gas phase radicals reduced the carbon incorporated from the TMG. Higher V/III ratios are proposed to increase the surface concentration of AsHx species. Supplemental gas phase t-butyl radicals, produced from the decomposition of azo-t-butane, are proposed to attack AsH3, also resulting in an increase in the surface concentration of AsHx species. Higher surface concentrations of AsHx are then proposed to reduce carbon incorporation by enhancing the desorption of carbon-containing species.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348743
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  • 7
    Digitale Medien
    Digitale Medien
    Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1479-1481 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105293
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  • 8
    Digitale Medien
    Digitale Medien
    High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 517-519 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Carbon tetrabromide (CBr4) and bromoform (CHBr3) have been studied as carbon doping sources for GaAs grown by gas source molecular beam epitaxy (GSMBE) with elemental Ga and thermally cracked AsH3. Hole concentrations in excess of 1×1020 cm−3 have been measured by Hall effect in both CBr4- and CHBr3-doped GaAs, which agrees closely with the atomic C concentration from secondary-ion mass spectrometry, indicating complete electrical activity of the incorporated carbon. The GaAs growth rate is unaffected by the CBr4 and CHBr3 fluxes over the range of dopant flow investigated. The efficiencies of carbon incorporation from CBr4 and CHBr3 are, respectively, 750 and 25 times that of trimethylgallium (TMG), which is commonly employed as a carbon doping source in metalorganic MBE (MOMBE). The sensitivity of carbon incorporation to varying substrate temperature and V/III ratio has been observed to be significantly reduced with CBr4 and CHBr3 from that obtained under similar growth conditions with TMG in MOMBE.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104600
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  • 9
    Digitale Medien
    Digitale Medien
    Non-self-limiting nature of silicon reduction of WF6 in cold wall systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1428-1441 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This paper addresses the kinetics and related mechanisms of non-self-limiting nature of Si reduction of WF6 in cold wall systems for the first time. The growth of such films in low-pressure chemical-vapor deposition (LPCVD) and ultrahigh vacuum (UHV) systems is compared. Both systems produce non-self-limiting, uniform, controllable, nonporous films. The growth is controlled by process parameters such as the wafer temperature and WF6 concentration at the wafer surface. The order of the Si reduction reaction is 0.5 in the concentration of WF6. The tungsten films deposited in the LPCVD system contaminated with water vapor are thicker than the films grown in the UHV system even when the temperature is below 450 °C. Such thicker films are produced as a result of the formation of an amorphous W-O layer. From the thermodynamic considerations, the origin of W-O layer is attributed to a parallel reaction between water vapor, WF6, and substrate Si. The beneficial role played by the W-O layer is that it prevents any volume shrinkage of the converted layer and restricts lateral encroachment. In the absence of such a layer as in the case of the UHV system, severe volume shrinkage and encroachment are observed. A theoretical model together with physical mechanisms explaining the non-self-limiting phenomenon are proposed. The mechanism suggests that a fine-grained W structure surrounded by a W-O layer, formed in the LPCVD system, assists faster out-diffusion of Si through the tungsten films compared to the UHV system. The higher values of the diffusion coefficient for Si out-diffusion through films grown in the LPCVD system as compared with the UHV system support this mechanism. The out-diffused Si is substituted to W by reduction reaction to complete the film growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351265
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  • 10
    Digitale Medien
    Digitale Medien
    High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1896-1898 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105066
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