ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planarmapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edgedislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thickNi Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBICsignals was proportional to the depth position of defect. In addition, the information of thedecomposition and combination for dislocations can be obtained from the fluctuation of EBIC signalalong the scanning position
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.423.pdf
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