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  • 1995-1999  (5)
  • 1975-1979  (7)
  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119585
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  • 2
    Digitale Medien
    Digitale Medien
    Impurity-defect configurations in ion-irradiated copper studied by the DPAC-technique with111In (1978)
    Springer
    The European physical journal 32 (1978), S. 59-66 
    Details
    ISSN: 1434-6036
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The structure and dynamics of lattice defects in copper are investigated. The defects have been produced by irradiation with heavy ions of 350 keV between 85 K and 300 K. Three different defect configurations are distinguished by the time differential perturbed angular correlation technique (DPAC) with111In as radioactive probe. Their electric quadrupole coupling constantsν Q =e 2 Qq zz /h areν Q1=116(2)MHz,ν Q2=181(3)MHz andν Q3=52(1)MHz. The defects characterized byν Q1 andν Q2 are observed in the temperature range of recovery stage III. The appearance ofν Q3 is closely correlated with recovery stage V. The symmetry axis of the electric field gradient associated with this defect-111In configuration points along a crystallographic 〈111〉 direction. We attribute this defect to a planar faulted loop, presumably of vacancy type. The influence of irradiating particles and dose on the defect configurations is analyzed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01322187
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  • 3
    Digitale Medien
    Digitale Medien
    Lattice defects in cadmium studied by the angular correlation method (1979)
    Springer
    The European physical journal 33 (1979), S. 155-162 
    Details
    ISSN: 1434-6036
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The perturbed angular correlation of the 173 keV—247 keVγ-γ-cascade in111Cd was measured for proton-irradiated and quenched cadmium as a function of the annealing temperature. Three distinct defect configurations were identified by the quadrupole interaction frequencies:D 1 with $$\left| {v_Q } \right| = \left| {\frac{{eQV_{zz} }}{h}} \right| = 103\left( 3 \right)$$ MHz visible for annealing temperaturesT A between 110 K and 130 K,D 2 with |v Q | between 4 and 22 MHz observed for 110 K ≦T A ≦150 K, andD 3 with no electric field gradient. The fractionD 3 is seen from 77 K to room temperature. The defect configurationsD 1 andD 2 are of vacancy type. It is argued thatD 1 originates from simple defect structures (probably mono- or divacancies) whileD 2 is attributed to small vacancy agglomerates. Because of its larger stability,D 3 is ascribed to defect loops. The experiment shows clearly that a vacancy-like defect is mobile in recovery stage III in Cd.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01323688
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  • 4
    Digitale Medien
    Digitale Medien
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050996
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  • 5
    Digitale Medien
    Digitale Medien
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 6
    Digitale Medien
    Digitale Medien
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 7
    Digitale Medien
    Digitale Medien
    Atomic nitrogen in C60:N@C60 (1998)
    Springer
    Applied physics 66 (1998), S. 287-292 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050668
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  • 8
    Digitale Medien
    Digitale Medien
    Diffusion of positive mouns in nickel and iron (1979)
    Springer
    Hyperfine interactions 6 (1979), S. 245-249 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The depolarization rate for spin polarized μ+ particles implanted into high purity polycrystalline nickel and iron samples were studied as a function of temperature in zero external field. In nickel a rapid decrease of the depolarization rate above 300 K was found. Assuming an Arrhenius behaviour, an activation energy of Ea=173 meV was determined. In iron it was not possible to fit the data with a simple Arrhenius law. At least two different slopes can be observed in an Arrhenius plot with Ea=(124±35) meV and Ea=(19±2) meV, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01028801
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  • 9
    Digitale Medien
    Digitale Medien
    Temperature dependence of the electric field gradient in radiation damaged copper (1978)
    Springer
    Hyperfine interactions 4 (1978), S. 585-588 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01021895
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  • 10
    Digitale Medien
    Digitale Medien
    Point defect trapping at111In in copper after ion implantation (1978)
    Springer
    Hyperfine interactions 4 (1978), S. 706-709 
    Details
    ISSN: 1572-9540
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01021917
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