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Digitale Medien

Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence (1990)

Grosse, P. ; Harbecke, B. ; Heinz, B. ; [weitere]

Springer

Applied physics 50 (1990), S. 7-12

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Details

ISSN: 1432-0630

Schlagwort(e): 78.20 ; 78.65

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00323946

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