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  • 1
    Digitale Medien
    Digitale Medien
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346566
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  • 2
    Digitale Medien
    Digitale Medien
    Comment on "Temperature dependence of the barrier height of metal–semiconductor contacts on 6H-SiC'' [J. Appl. Phys. 79, 301 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6570-6571 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this paper we comment on the interpretation of CV data in the presence of deep levels or interfacial layers. In order for the barrier height extracted from CV measurements to be reliable, no frequency dependence should exist at the measurement frequencies, and the slope of the 1/C2 vs voltage curve should not be temperature dependent. This is illustrated by data from Schottky barriers on 6H–SiC. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363643
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  • 3
    Digitale Medien
    Digitale Medien
    On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362884
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  • 4
    Digitale Medien
    Digitale Medien
    Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7313-7322 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3–23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360379
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  • 5
    Digitale Medien
    Digitale Medien
    Fabrication and properties of metal/ferroelectrics/semiconductor diodes on 4H–SiC (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1532-1534 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Polycrystalline PbTiO3 (PTO) films with pure perovskite phase were deposited directly on 4H n-type SiC substrates by pulsed laser ablation. By subsequent gold metallization, metal/ferroelectrics/semiconductor (MFS) diodes were fabricated. At room temperature the leakage current exhibits ohmic behavior at low voltages (〈3 V), but at higher voltages (≥6 V), it is Schottky emission dominated. Both the dielectric constant and the resistivity of the PTO layers are frequency dependent, decreasing monotonically with the increasing frequency. The capacitance–voltage (C–V) curves of the diodes demonstrate the typical hysteresis loop of a MFS diode structure, and carrier injection and memory effects are observed in the C–V measurements. The investigated MFS diode structure has tentative applications as a gate structure in a SiC field effect transistor or a nonvolatile memory cell on a SiC substrate. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122196
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  • 6
    Digitale Medien
    Digitale Medien
    Ferroelectric films prepared by laser ablation directly on SiC substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5785-5789 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Because of the common physical properties of silicon carbide (SiC) and lead base ferroelectric films [such as lead zirconate titanate (PZT) and lead titanate (PTO)], it is interesting to investigate ferroelectrics and SiC based integrated devices for potential high radiation environments, high speed, high temperature, and high density memory applications. Here we first report our primary results of depositing lead base ferroelectric films directly onto bare SiC substrates. Ferroelectric films including undoped and doped PZT and PTO were directly deposited on bare 3C-SiC and 4H-SiC substrates. X-ray diffraction analyses indicate that all the PTO films deposited at substrate temperatures from 600 to 650 °C are polycrystalline of the pure perovskite phase. PZT films deposited at a substrate temperature of 570 °C are dominated by the pyrochlore phase and even at a higher substrate temperature of 650 °C both the perovskite and the pyrochlore phases coexist. The pyrochlore phase of the PZT films is able to be converted into the perovskite phase by rapid thermal annealing at 800 °C for 30–60 s. The formation of an interfacial layer of a nonferroelectric phase (Pb2Ti2O6), which is caused by interdiffusion, is one of the most serious problems during the fabrication of lead based ferroelectric films directly onto the Si wafer. However, there is no such interdiffusion observed between the ferroelectric films and the SiC substrates. Capacitance versus voltage (C–V) curves of metal/ferroelectric/semiconductor diode structures demonstrate typical C–V hysteresis loops and the capacitance versus temperature measurements further confirm the ferroelectric properties of the films. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368869
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  • 7
    Digitale Medien
    Digitale Medien
    Oxidation of silicon–germanium alloys. II. A mathematical model (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5779-5787 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the SixGe1−x to an oxidizing atmosphere. In accordance with thermodynamics, the GeO2 formed is subsequently reduced by the (free) silicon available at the interface between the growing SiO2 and the remaining SixGe1−x through a reduction reaction. Thus, the enhanced oxidation of silicon in the presence of germanium is modeled as a result of the rapid oxidation of germanium followed by the quick reduction of GeO2 by silicon. The growth of a mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 only occurs when the supply of silicon to the SiO2/SixGe1−x interface is insufficient. A comparison is made between simulation and experiment for wet oxidation (in pyrogenic steam) of polycrystalline SixGe1−x films. It is found that the model gives a good account of the oxidation process. Kinetic parameters, i.e., interfacial reaction rate constant for oxidation of germanium and diffusion coefficient of silicon (germanium) in SixGe1−x, are extracted by fitting the simulation to the experiment. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366444
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  • 8
    Digitale Medien
    Digitale Medien
    Oxidation of silicon–germanium alloys. I. An experimental study (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5773-5778 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of germanium and that the enhancement effect is more pronounced for the films richer in germanium. A mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 is found at the sample surface if the initial SixGe1−x contains more than 50% of germanium. However, a surface silicon cap layer of about 14 nm is found to have a significant impact on the oxidation of the Si0.5Ge0.5 films; it leads to the growth of about 115-nm-thick SiO2 which is about four times that of the SiO2 resulting from the oxidation of the cap layer itself. On the SixGe1−x films with only 30% of germanium, the SiO2 continues to grow after oxidation for 180 min resulting in 233-nm-thick SiO2 which is about 2.4 times greater than the SiO2 grown on 〈100〉 silicon substrates. Rejection of germanium results in piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1−x. Substantial interdiffusion of silicon and germanium takes place in the remaining SixGe1−x. The experimental results are discussed in terms of thermodynamics and kinetics. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366443
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  • 9
    Digitale Medien
    Digitale Medien
    Dopant redistribution during the solid-phase growth of CrSi2 on Si(100) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4187-4193 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The results of an investigation into the redistribution of dopants—As, B, and P—during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341333
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  • 10
    Digitale Medien
    Digitale Medien
    Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341541
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