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  • 11
    Electronic Resource
    Electronic Resource
    Electron field emission from tetrahedral amorphous carbon films with multilayer structure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8098-8102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multilayer structure with alternating metal and semiconductor layers is proposed to occur in tetrahedral amorphous carbon (ta-C) films prepared by using an intermittent layer-by-layer deposition method. In this model, the multilayers can be represented as A/B/A/B/.../A/B/A stacks, in which A is considered to be a semimetallic sp2-rich graphite-like layer with B being a semiconducting sp3-rich diamond-like layer. According to the proposed structural model, the electron field emission properties of the ta-C multilayers that could be modulated by adjusting the total number of layers, layer thickness and sp3 content of each layer have been predicted. Correspondingly, three kinds of ta-C multilayers were designed and deposited to confirm this model by enabling us to measure the electron field emission properties. Agreement between the prediction and the experimental results has been observed. It was found that field emission from ta-C multilayers can be optimized by changing the number of layers, layer thickness and sp3 content of each layer. In our experiments, a threshold electric field (Eth) as low as ∼5 V/μm has been obtained for field emission from ta-C multilayers with a total of 20 layers and with a 10 nm layer thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373504
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  • 12
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of nitrogen incorporated amorphous carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2874-2879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen incorporated amorphous carbon (a-C:N) films on silicon (111) wafer, quartz, and Ti/C substrates with nitrogen concentration up to 20 at. % are prepared by filtered arc deposition. The nitrogen concentration and area density of the films were measured by Rutherford backscattering. The electrical properties of the films were investigated by Hall electrical measurements. The optical properties of the films were characterized by ultraviolet–visible and infrared reflection spectrometry. Results indicate that the optical band gap and area density of a-C:N films decrease with increasing nitrogen pressure, accompanied with an increase of nitrogen concentration and reflectivity of the films. Furthermore, the influence of nitrogen concentration on the optical band gap of the films is discussed. The dielectric constant, refractive index and absorption coefficient of a-C:N films in infrared region were investigated. The results indicate that the optical constants of a-C:N show considerable variation with wave number and nitrogen content. The variation of optical properties and optical constants of a-C:N films may be due to the development of graphite-like structure with the increasing of nitrogen content in these films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372271
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  • 13
    Electronic Resource
    Electronic Resource
    Irradiation effect of low energy nitrogen-ion beam during pulsed laser deposition process on the structural and bonding properties of carbon–nitride thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1580-1587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon–nitride thin films were deposited by pulsed laser ablation of graphite with assistance of low energy nitrogen-ion-beam irradiation. The nitrogen to carbon (N/C) atomic ratio, bonding state, microstructure, surface morphology, and electrical property of the deposited carbon–nitride films were characterized by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, micro-Raman spectroscopy, x-ray diffraction (XRD), atomic force microscopy, and four-probe resistance. The irradiation effect of low energy nitrogen-ion beam on the synthesis of carbon–nitride films was investigated. The N/C atomic ratio of the carbon–nitride films reached the maximum at the ion energy of ∼200 eV. The energy of ∼200 eV was proposed to promote the desired sp3-hybridized carbon and the C3N4 phase. Electrical resistivity of the deposited films was also influenced by the low energy nitrogen-ion-beam irradiation. However, the low energy irradiation had little effect on the surface morphology of the films. XRD results revealed the coexistence of the α- and β-C3N4 phases in the deposited thin films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335643
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  • 14
    Electronic Resource
    Electronic Resource
    Modification of exchange interaction parameters by wire width in Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6701-6703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoluminescence from mesa-shaped Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires were studied. The Zeeman shift of the excitonic photoluminescence from the quantum wires in a magnetic field is significantly decreased, compared to that from quantum wells. This decrease results from the possible reduction of the exchange interaction of electrons and holes with Mn ions in low dimensional structures. In the excitonic photoluminescence of the quantum wires with the width of 50–100 nm, the transient relaxation of the luminescence peak energy due to the excitonic magnetic polaron formation is remarkably less than that in the quantum well. This result shows the suppressed excitonic magnetic polaron effect in the narrower quantum wires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357143
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  • 15
    Electronic Resource
    Electronic Resource
    Effect of temperature on carbon nitride films synthesized by ion-beam-assisted pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7060-7066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride thin films were deposited by pulsed laser deposition with nitrogen ion beam assistance at a substrate temperature varying from room temperature to 800 °C. The effect of the substrate temperature on the nitrogen content, surface morphology, structure, and electrical property of the carbon nitride films was investigated. The deposited films were characterized by atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and four-probe resistance. The nitrogen content of the deposited films reached its maximum value of 25% at a substrate temperature of 400 °C. AFM images revealed that an island structure occurred and developed on the surface of the films deposited at the high substrate temperature. FTIR and XPS spectra showed the existence of sp3C–N and sp2C(Double Bond)N bonds in the deposited films. The deposited carbon nitride films had an amorphous structure with two carbon nitride phases inclusions, which had a stoichiometry near C3N4 and a variable stoichiometry from C5N to C2N, respectively. With the increase in substrate temperature, the relative content of the sp3C–N bonds, i.e., the C3N4 phase, increased and the crystallization degree of the deposited films enhanced, which were confirmed by the Raman analysis. Very few C(Triple Bond)N bonds in the films were found as compared to other carbon–nitrogen bonds. Electrical resistivity exhibited the highest value for the film deposited at 400 °C. Investigation results indicated that the high substrate temperature could promote the formation of C3N4 phase. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326474
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  • 16
    Electronic Resource
    Electronic Resource
    Structural and bonding properties of carbon nitride films synthesized by low energy nitrogen-ion-beam-assisted pulsed laser deposition with different laser fluences (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1634-1640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films were deposited by pulsed Nd:yttrium–aluminum–garnet laser ablation of graphite with assistance of low energy nitrogen-ion-beam bombardment. The nitrogen to carbon (N/C) atomic ratio, surface morphology, bonding state, and microstructure of the deposited carbon nitride films were characterized by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, atomic force microscopy (AFM), and x-ray diffraction. The influence of laser fluence on the synthesis of carbon nitride films was investigated. The N/C atomic ratio of the carbon nitride films can reach the maximum at the highest laser fluence. XPS and FTIR analyses indicated that the bonding state between the carbon and nitrogen in the deposited films was significantly influenced by the laser fluence during deposition. The carbon–nitrogen bonding of C–N and C=N were observed in the films. In addition, α and β C3N4 phases were found to coexist in the carbon nitride films with relative low degree of ordering in the crystal lattice. AFM results indicated that the laser fluence also had a critical effect on the surface structure of the carbon nitride films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334643
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  • 17
    Electronic Resource
    Electronic Resource
    Observation of sp3 bonding in tetrahedral amorphous carbon using visible Raman spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2305-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible Raman spectroscopy excited at 532 nm was used to characterize the carbon bonding in tetrahedral amorphous carbon (ta-C) films. The vibrational modes of the sp3 bonding in ta-C films were revealed directly. An additional Raman band occurring below 1350 cm−1 was observed. It consisted of two features centered on ∼1270 and ∼1170 cm−1, which were associated with sp3 bond stretching. The observed sp3 related Raman spectrum approached the vibrational density of states of amorphous diamond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288160
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  • 18
    Electronic Resource
    Electronic Resource
    Sb-doped SrTiO3 transparent semiconductor thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1676-1678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically transparent Sb-doped SrTiO3 thin films with a transmittance higher than 95% in most of the visible region have been grown on SrTiO3 (001) substrate by pulsed laser deposition. The films behave as an n-type semiconductor between 10 K and room temperature. The carrier concentration and mobility of the films at room temperature are ∼5.8×1017 cm−3 and ∼6.4 cm2/V s, respectively. X-ray photoelectron spectroscopy measurement reveals that the delocalized electrons from the Sb dopants give rise to deep impurity levels within the band gap of the parent compound, which are responsible for the electrical conduction observed. The wide band gap and low density of states in the conduction band account for transparency of the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355992
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  • 19
    Electronic Resource
    Electronic Resource
    Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance–voltage measurement (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal–ferroelectric–semiconductor (MFS) structure has been developed by depositing SrBi2Ta2O9 (SBT) films directly on n-type (100) Si by pulsed laser deposition. In the MFS structure, evidence for ferroelectric border traps in the SBT film has been obtained by high-frequency capacitance–voltage (C–V) measurement. When the ramp rate of voltage is higher than 200 mV/s, typical ferroelectric C–V hysteresis loops with the counterclockwise direction are obtained in C–V plots. When the ramp rate is lower than 80 mV/s, the ferroelectric hysteresis loops are replaced by the trap-induced ones with the clockwise direction. This pronounced change results from the fact that more and more border traps in SBT can communicate with the underlying Si. The border-trap density at the ramp rate of 10 mV/s is as high as 1.8×1012 cm−2. Moreover, the width of the hysteresis loops changes linearly with the logarithmic decrease in ramp rate, which is consistent with the ferroelectric border traps communicating with Si by tunneling or a thermally activated process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127045
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  • 20
    Electronic Resource
    Electronic Resource
    Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN metal–semiconductor–metal photoconductive detectors have been fabricated on Si(111) substrates. The GaN epitaxial layers were grown on Si substrates by means of metalorganic chemical-vapor deposition. These detectors exhibited a sharp cutoff at the wavelength of 363 nm and a high responsivity at a wavelength from 360 to 250 nm. A maximum responsivity of 6.9 A/W was achieved at 357 nm with a 5 V bias. The relationship between the responsivity and the bias voltage was measured. The responsivity saturated when the bias voltage reached 5 V. The response time of 4.8 ms was determined by the measurements of photocurrent versus modulation frequency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127004
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