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  • 11
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4305-4314 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Polymer crystallization in dilute solution is studied by three-dimensional Monte-Carlo simulations using the bond fluctuation model. We study monodisperse chains of moderate length, intended to model recent experiments on monodisperse alkanes with length of a few hundred carbon atoms, and we also investigate chain folding of very long polymers. For monodisperse flexible chains we observe both extended-chain and once-folded-chain crystals. The simulations illustrate the range of defects and irregularities which we expect to find in polymer crystals. The roughness of the top and bottom surfaces of the lamellae is measured. Chain ends can be seen as cilia emerging from the surfaces. Folds are found to occur with approximately equal frequency on top and bottom surfaces. Although most chain folds are aligned perpendicular to the growth direction, a significant number of chains folding parallel to the growth direction are found as defects. The simulation includes a chain stiffness parameter which has an important effect on chain folding kinetics. When chains are semi-flexible the crystals formed are extremely irregular with many defects including holes and blocks of extended chains within the folded chain lamellae. For very long chains we show that the lamellar thickness is determined by the folding kinetics. The thickness diverges as the temperature approaches the infinite chain melting point T∞. For T→T∞, the thickness is close to the theoretical minimum thickness, which indicates the dominant importance of the entropic barrier in crystallization. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Stable transfection of the human neuroblastoma cell line SH-SY5Y with the human 5-hydroxytryptamine2A (5-HT2A) or 5-HT2C receptor cDNA produced cell lines demonstrating ligand affinities that correlated closely with those for the corresponding endogenous receptors in human frontal cortex and choroid plexus, respectively. Stimulation of the recombinant receptors by 5-HT induced phosphoinositide hydrolysis with higher potency but lower efficacy at the 5-HT2C receptor (pEC50 = 7.80 ± 0.06) compared with the 5-HT2A receptor (pEC50 = 7.30 ± 0.08). Activation of the 5-HT2A receptor caused a transient fourfold increase in intracellular Ca2+ concentration. Whole-cell recordings of cells clamped at −50 mV demonstrated a small inward current (2 pA) in response to 10 µM 5-HT for both receptors. There were no differences in potency or efficacy of phosphoinositide hydrolysis among four hallucinogenic [d-lysergic acid diethylamide (LSD), 1-(4-iodo-2,5-dimethoxyphenyl)-2-aminopropane (DOI), 5-methoxy-N,N-dimethyltryptamine, and mescaline] and three nonhallucinogenic drugs (m-chlorophenylpiperazine, quipazine, and ergotamine). Comparison of equipotent doses producing 20% of the maximal response induced by 5-HT revealed selective activation of the 5-HT2A receptor by LSD and to a lesser degree by DOI, mescaline, and ergotamine. Quipazine and 5-methoxy-N,N-dimethyltryptamine were relatively nonselective, whereas m-chlorophenylpiperazine selectively activated the 5-HT2C receptor. It is unlikely therefore that hallucinosis is mediated primarily by activity at the 5-HT2C receptor, whereas activity at the 5-HT2A receptor may represent an important but not unique mechanism associated with hallucinogenic drug action.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 8629-8632 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6980-6983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of a δ-doped GaAs film has been measured at 300 K. Results reveal many Franz–Keldysh oscillations (FKOs) above the band-gap energy, which will enable the electric-field strength to be determined from the periods of FKOs. Since the photovoltaic effect cannot be neglected in PR measurements when using light as both the pumping and probing beams, it is generally assumed that the modulation field δF is much smaller than the built-in field F so that the periods of the FKOs will not be affected by the pumping beam. However, the induced photovoltage can be over 2/3 of Fermi level at low temperatures and cannot be neglected even at room temperature. Hence, the finite value of δF needs to be taken into consideration. The effect of δF on the shapes of PR is discussed, and it is shown that the FKOs of PR oscillate at a frequency corresponding to F−δF/2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nitrogen interstitial in α-Fe crystalline on the magnetic soft properties of Fe87.5Ta12.5Nx films has been investigated. The magnetic soft properties can be improved by carefully controlling the nitrogen flow ratio during sputtering and the postannealing to result in a film with fine grain size and low magnetostriction. Using x-ray diffraction technique, the nitrogen content in the α-Fe crystalline of FeTaN film can be estimated from the effect of lattice expansion of α-Fe crystalline due to nitrogen interstitial. It is found that the film with about 7.5 at. % N2 in α-Fe crystalline exhibits the best magnetic soft properties of Br=1.6 T, Hc=0.2 Oe and μi(1 MHz)=3400, respectively. X-ray diffraction analysis is found to provide a proper and an easy way to identify the suitable condition for growing excellent magnetic soft FeTaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2117-2119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance spectroscopy of the InxGa1−xAs/GaAs single-quantum well system has been measured at several reverse dc bias voltages. The spectrum can be divided into two parts by the photon energy; one belongs to the GaAs bulk transition and the other belongs to the InxGa1−xAs/GaAs quantum well transition. The GaAs transition has shown the Franz–Keldysh oscillations which can be used to deduce the strength of the electric field in the bulk GaAs. On the other hand, the InxGa1−xAs/GaAs quantum well transition has exhibited the quantum confined Stark effect; that is, the transition energy in the quantum well will be redshifted in the presence of an electric field. The field in the quantum well can be estimated from the amount of redshifting and it was found that the built-in field in the quantum well needs to be close to that of GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4777-4782 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the enhancement of Schottky barriers to n-GaAs has been carried out using the following diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/ n-GaAs, prepared by sputter deposition at a base pressure ∼2×10−7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs. Enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. A regrowth mechanism was used to rationalize the Schottky barrier enhancement. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer then reacts with the Ni-Al layer on top to form the (Al, Ga)As layer under subsequent high temperature annealing. A (200) dark-field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1902-1906 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The zinc concentration measured after organometallic vapor phase epitaxy (OMVPE) growth on (100)-oriented GaAs at 700 °C has been compared to the zinc concentration measured after in-diffusion under near-equilibrium conditions. During diffusion, the concentration of Zn 20 nm below the surface was found to vary with P1/2Zn, as expected for bulk solid–vapor equilibrium. During growth, the concentration of Zn varied linearly with PZn up to a maximum value which was found to correspond to the solubility limit set by second phase formation, e.g., growth of Zn3As2. Although large differences were observed between the results of the two experiments when using nominally identical ambient conditions, all of the results are consistent with a thermodynamic model in which the Fermi level at the surface is pinned approximately 200 meV below the intrinsic Fermi level. Typical OMVPE growth conditions appear to give a bulk zinc concentration which is supersaturated relative to the ambient partial pressures used, and to enhance the diffusion of Zn into the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7183-7185 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our photo reflectance (PR) spectroscopy measurements of the δ-doped GaAs film at 300 K reveal many Franz–Keldysh oscillations (FKOs) above the valence band edge, E0 and the spin-orbit split energy, E0+Δ0, which enables us to determine the electric field strength from periods of FKOs provided reduced masses of the electron and holes are known. The reduced masses can be determined unambiguously at E0+Δ0, but not at E0, at which the heavy- and light-hole transitions are degenerate. However, the ambiguity at E0 can be resolved by applying the fast Fourier transform to the PR spectrum to separate the contributions from the heavy and light holes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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