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  • 11
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    European journal of neuroscience 12 (2000), S. 0 
    ISSN: 1460-9568
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Estimation of the phosphate adsorption capacity in highly weathered acid soils is crucial for adopting appropriate phosphate fertilization practices. In this work, the salt sorption effect was used to develop a method for estimating phosphate adsorption capacity from the decrease in electrical conductivity of a potassium dihydrogen phosphate solution brought in contact with acidic soil samples from surface and subsurface horizons of Acrisols. The method is fast and simple and requires only the use of a conductimeter.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 47 (1992), S. 0 
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Herbage allowance is one of the important pasture factors in the determination of intake by grazing livestock. Ingestive behaviour of 12 adult Angus cows (Bos taurus) was measured over a range of allowances (0·25 to 0·72 kg dry matter (DM) per 100 kg live weight (LW) for a 1-h period) of vegetative tall fescue (Festuca arundinacea Schreb.). A balanced change-over design was used to estimate direct, residual and permanent effects of herbage allowance on rate of DM intake, rate of biting and herbage DM intake per bite. In Experiment 1, herbage DM intake per meal increased linearly from 0·68 to 1·72 kg (100 kg LW)−1 as DM allowance increased from 0·25 to 0·72 kg (100 kg LW)−1 h−1. Cows grazed at ·30 kg (100 kg LW)−1 h−1 and stopped grazing when the sward was reduced to a height about 10 to 12 cm above the soil surface, approximately defined by the tops of pseudostems. In Experiment 2, herbage DM intake rates of 0·29, 0·47 and 0·42 kg (100 kg LW)−1 h−1 were recorded as cows grazed allowances of 0·43, 0·70 and 0·90 kg (100 kg LW)−1 h−1 for most of the 1-h grazing period. Limiting herbage DM allowances in Experiment 2 were associated with small reductions in rate of biting and herbage DM intake per bite as allowance declined. Sward DM density (〉5 cm) was an important variable in the determination of herbage DM intake rates at lower herbage allowances.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4620-4622 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure floating base transistor. The feasibility of the two-color bias-switchable detector was demonstrated by obtaining backside illuminated spectrally pure dual-band detection at 77 K. Wavelength cutoff (λco) selection to 5.2 μm with 60% quantum efficiency (QE) was obtained by applying a negative bias of −250 meV, and to λco=7.9 μm with 36% QE by applying a positive bias of 250 meV. The current-voltage characteristics of this device can be described in terms of a simple back-to-back diode model.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4300-4305 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we have applied the admittance spectroscopy technique to characterize the DX centers in AlxGa1−xAs alloys doped with silicon. Our experimental results reveal the existence of two DX centers related to silicon in AlxGa1−xAs alloys, named DX-I and DX-II centers, with thermal activation energies of 0.370 and 0.415 eV, respectively. These values are lower than those obtained by other authors using capacitance techniques. To explain this disagreement it should be noticed that capacitance techniques can be affected by the nonexponential behavior of the thermal emission transients of the DX centers in AlxGa1−xAs alloys.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2710-2716 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor capacitors have been fabricated on SF6 and SF6+Cl2 reactive-ion-etched silicon in order to study the resulting defects at the Si-SiO2 interface and in the bulk of the silicon substrate. The reactive-ion-etching (RIE) induced damage reveals itself by the presence of positive charge in the oxide, by interfacial states, and by two deep levels in the silicon bulk located at 300 and 335 meV above the valence band and probably related to fluorine atoms. We have studied the effect of the chamber pressure and the plasma composition on the resulting damage. This damage is more important when the chamber pressure is low because of the higher free-mean path of the plasma ions. On the other hand, when the Cl2 concentration in the plasma is raised the densities of interface states and of the deep levels decrease while the positive charge in the oxide increases. Finally, we have shown that a post-RIE thermal annealing can be used to restore the electrical properties of the RIE-damaged silicon surfaces.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1747-1753 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long and middle wavelength infrared (LWIR, MWIR) p+-n photodiodes have been fabricated with Hg1−xCdxTe (0.20〈x〈0.30) grown by molecular-beam epitaxy (MBE). The epilayers were grown on (211)B lattice-matched ZnCdTe substrates. The surface morphology was smooth and free of in-plane twins. The Cd concentration (x) was uniform across the wafer, with standard deviations (Δx) as low as 0.0017. Structural properties were measured by double-crystal x-ray rocking curve and dislocation etching; FWHM values as low as 34 arcsec and etch pit density values as low as 1×105 cm−2 were measured. p+ -n homojunctions were formed by arsenic diffusion; unpassivated mesa photodiodes were fabricated by standard photolithographic techniques. MWIR and LWIR photodiodes fabricated with MBE material exhibited good diode performance, comparable to that obtained on photodiodes fabricated with the more matured technique of liquid-phase epitaxy. 77-K R0A products of the diodes measured were 6.35×107, 22.3, and 1.76 Ω cm2 with cutoff wavelengths of 4.66, 9.96, and 12.90 μm, respectively. The R0A product for a VLWIR photodiode was 1.36×102 Ω cm2 with a cutoff wavelength of 16.23 μm at 35 K. LWIR diodes with no antireflection coating had a quantum efficiency of 48.6%. The present results represent a significant step toward the demonstration of MBE as a viable growth technique for the fabrication of large infrared focal plane arrays.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 298-301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical electron and hole capture cross sections for the deep levels Ec−0.22 eV and Ev+0.33 eV associated to Pd in Si have been measured using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. The experimental results fit well to the model of Lucovsky. The threshold energies obtained for the electron and hole emission from the Ec−0.22 eV level are 250 and 890 meV, respectively. The threshold energies obtained for the electron and hole emission from the Ev+0.33 eV level are 820 and 330 meV, respectively.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 658-667 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient binary collision approximation (BCA) ion implant code with good prediction capabilities for semiconductor materials (Si, GaAs, SiC) with only one fitting parameter for low implantation doses is presented. It includes specific interatomic potentials and recent improvements in physical models for inelastic stopping. A periodic ab initio full bond electron density for the target is used. Damage accumulation is supported using a modified Kinchin–Pease model [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955)]. Also, some of the BCA integration algorithms and target selection procedure have been refined. An algorithm commonly used for statistical noise reduction has been modified to also improve the noise reduction in the lateral and shallow zones. The agreement with experiments is good, even under channeling conditions and for different target materials. A comparison with experimental secondary ion mass spectroscopy results for several projectiles and targets is presented. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4231-4236 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Among the various techniques that have been investigated to produce Hydroxyapatite (HA) coatings in order to promote fixation and osteointegration of cementless prosthesis, the plasma spray (PS) technique is the most popular method commercially in use. PS presents some disadvantages such as the poor coating-to-substrate adhesion, low mechanical strength, and brittleness of the coating. In order to overcome the drawbacks of plasma spraying, an approach on how to bind HA to the Ti alloy will be introduced in this work, using a well-known technique in the metallurgical field: laser surface cladding. Different techniques were applied to characterize the coated samples, including x-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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