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  • 11
    Electronic Resource
    Electronic Resource
    Silane thermometry in radio-frequency discharge plasma by coherent anti-Stokes Raman spectroscopy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1872-1874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rotational temperature of silane molecules in a flowing gas as well as in a radio-frequency discharge plasma of silane has been determined by the analysis of its coherent anti-Stokes Raman spectra. The ν1 Q-band coherent anti-Stokes Raman spectra of silane have been measured under different conditions such as discharge off, discharge on, and electrode heating, and fitted to theoretically calculated curves for various rotational temperatures using a nonlinear least-squares method. The results have shown that discharge power as well as electrode heating increase the rotational temperature of SiH4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336415
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  • 12
    Electronic Resource
    Electronic Resource
    Low-temperature growth of crystalline silicon on a chlorine-terminated surface (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3515-3517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the role of surface termination during growth of crystalline silicon at low temperatures. Microcrystalline silicon was fabricated using plasma-enhanced chemical-vapor deposition with a hydrogen-diluted dichlorosilane (SiH2Cl2)/monosilane (SiH4) mixture to study the role of hydrogen and chlorine in crystal formation. When varying the fraction of SiH2Cl2, x=[SiH2Cl2]/([SiH4]+[SiH2Cl2]), good crystallinity was obtained for x=0 and 1, whereas the crystallinity was markedly deteriorated for intermediate x. Optical emission spectroscopy of the plasma suggests that film precursors different from SiHx fragments and atomic chlorine are generated for x≠0 and that atomic hydrogen is generated in all cases. Infrared reflection absorption spectroscopy indicates that the surface coverage is hydrogen for x=0, chlorine for x=1, and a hydrogen–chlorine mixture for intermediate x. These results imply that low-temperature growth of crystalline silicon is facilitated on a chlorine-terminated surface as well as on a hydrogen-terminated surface under the presence of atomic hydrogen. The cooperative roles of chlorine and hydrogen are proposed in the crystal growth of Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125373
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  • 13
    Electronic Resource
    Electronic Resource
    Effects of embedded crystallites in amorphous silicon on light-induced defect creation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1707-1709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate effects of embedded crystallites in hydrogenated amorphous silicon on light-induced metastable dangling-bond defect creation in a systematic manner. Inclusion of a small volume fraction of crystallites into the amorphous matrix significantly suppresses defect creation against moderate light illumination. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and the subsequent defect creation. The presence of a small volume fraction of crystallites, however, is no longer effective to improve the stability against strong light exposure such as pulsed laser irradiation. In this case, the higher carrier concentration favors bimolecular direct carrier recombination within the amorphous matrix. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123662
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  • 14
    Electronic Resource
    Electronic Resource
    Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2828-2830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron temperature measured by an optical-emission spectroscopy shows a strong substrate temperature dependence in a silane glow-discharge plasma. The electron temperature increases with time after turning on the plasma at a low substrate temperature of 150 °C, while it stays constant at a high substrate temperature of 400 °C. The electron temperature is drastically reduced when the source gas silane is diluted with hydrogen at low substrate temperatures. These results suggest that the electron temperature in silane plasma is strongly affected by an electron-attachment process to higher-order silane molecules whose formation reactions show negative activation energies with gas temperature and are also suppressed by the presence of hydrogen molecules. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322373
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  • 15
    Electronic Resource
    Electronic Resource
    Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 965-967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films have been grown by radio frequency (rf) plasma chemical vapor deposition with the addition of small amounts (up to 20%) of dichlorosilane to the silane. Results show that as the amount of dichlorosilane is increased, the films are more resilient to the creation of light induced defects. Under intense pulsed laser illumination (5 mJ/pulse, 10 ns, 10 Hz) the steady state defect density measured by the constant photocurrent method (CPM) is reduced by over one order of magnitude to 4×1016 cm−3 as compared to ∼5×1017 cm−3 for films grown under identical conditions with pure silane. Furthermore, there is a threefold increase in the deposition rate over the range of mixture ratios studied here. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113612
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  • 16
    Electronic Resource
    Electronic Resource
    Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6061-6063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very thin microcrystalline silicon films have been deposited by plasma-enhanced chemical vapor deposition (CVD) from hydrogen diluted SiH4 gas in order to study its initial growth mechanism. The dependence of the crystallinity and the Si-H bonding configuration on electrical and chemical properties of substrates have been studied using a high sensitivity Raman spectrometer. It is found that conductive and oxygen free substrates provide good crystallinity in the initial stage. The origin of the substrate dependence is explained in terms of the ion bombardment from the plasma and the chemical nature of the substrate surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363565
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  • 17
    Electronic Resource
    Electronic Resource
    Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1540-1542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103168
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  • 18
    Electronic Resource
    Electronic Resource
    Improvement of hydrogenated amorphous silicon germanium alloys using low power disilane–germane discharges without hydrogen dilution (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1274-1276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We suggest that the role of hydrogen dilution in the improvement of the quality of hydrogenated amorphous silicon germanium alloys is to alter the relative contribution of the short and long lifetime precursors to film growth which are deleterious and beneficient, respectively. In order to circumvent the preferential depletion of germane when mixed with silane, we have used low power disilane–germane discharges and thereby obtained films with an optical gap 〈1.5 eV having similar Urbach tail width and defect absorption, with and without hydrogen dilution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114395
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  • 19
    Electronic Resource
    Electronic Resource
    Ultraviolet photon induced stimulation of surface reaction during growth of hydrogenated amorphous silicon: Estimation of the lifetime of film precursors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ultraviolet (UV) photons for the improvement of photoconductivity in hydrogenated amorphous silicon (a-Si:H) films has been investigated by intermittent deposition and UV laser irradiation procedures. It is found that UV photons stimulate precursor reaction on the growth surface effectively, and this results in improved photoelectronic properties of a-Si:H. Moreover, lifetime of precursors on the growth surface is estimated to be on the order of seconds under UV photon irradiation at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110319
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  • 20
    Electronic Resource
    Electronic Resource
    Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1791-1793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8×1021 to 2.4×1023 cm−3 s−1, while the illumination temperature was kept at 30 or 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109551
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