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  • 11
    Electronic Resource
    Electronic Resource
    Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2728-2730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.20Ga0.80As/GaAs single-quantum well (SQW) structures with the GaAs capping layer thickness ranging from 5 to 500 nm have been studied directly by absorption spectroscopy. The absorption peaks are shifted to lower energy while the GaAs capping layer thickness decreases due to the strain relaxation in InGaAs/GaAs SQW structures induced by the GaAs capping layer. The best fit gives the conduction-band offset ratio Qc=0.70±0.05. The pronounced exciton peaks are observed in the absorption spectra at room temperature. The strength of the exciton–phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112549
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    Paper (German National Licenses)
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  • 12
    Electronic Resource
    Electronic Resource
    Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 952-954 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an infrared comparative photoluminescence and absorption study of optical properties in quaternary GaInAsSb/AlGaAsSb strained single-quantum-well structures grown by molecular beam epitaxy with the indium composition of 0.25 and 0.33. The light-hole-related luminescence structure observed in the lower indium composition sample disappears in the sample with higher indium composition due to the larger band splitting of heavy and light holes induced by the strain. This observed transition from type I to type II states for light holes is in good agreement with our theoretical prediction that it may occur for the indium composition larger than 0.30. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117092
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  • 13
    Electronic Resource
    Electronic Resource
    Exciton line broadening in strained InGaAs/GaAs single quantum wells (1995)
    Springer
    Applied physics 60 (1995), S. 243-245 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.65; 73.40. L4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract . We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum–Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratio Q c=0.70±0.05. The strength of the exciton–phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538398
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  • 14
    Electronic Resource
    Electronic Resource
    Exciton line broadening in strained InGaAs/GaAs single quantum wells (1995)
    Springer
    Applied physics 60 (1995), S. 243-245 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 73.40. L4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum-Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratioQ c=0.70±0.05. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538398
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  • 15
    Electronic Resource
    Electronic Resource
    Influence of the cap layer thickness on photoluminescence properties in strained InGaAs/GaAs single quantum wells (1994)
    Springer
    International journal of infrared and millimeter waves 15 (1994), S. 1643-1650 
    Details
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The influence of the GaAs cap layer thickness on the luminescence properties in strained In0.20Ga0.80As/GaAs single quantum well (SQW) structures has been investigated using temperature-dependent photoluminescence (PL) spectroscopy. The luminescence peak is shifted to lower energy as the GaAs cap layer thickness decreases, which demonstrates the effect of the GaAs cap layer thickness on the strain of InGaAs/GaAs single quantum wells (SQW). We find the PL quenching mechanism is the thermal activation of electron hole pairs from the wells into the GaAs cap layer for the samples with thicker GaAs cap layer, while in sample with thinner GaAs cap layer exciton trapping on misfit dislocations is dominated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02096891
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  • 16
    Electronic Resource
    Electronic Resource
    Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures (1994)
    Springer
    International journal of infrared and millimeter waves 15 (1994), S. 1809-1818 
    Details
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm−2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02096051
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