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  • 11
    Electronic Resource
    Electronic Resource
    Optical transitions in Pr-implanted GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 790-792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7×1013/cm2. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050 °C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10–300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124514
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  • 12
    Electronic Resource
    Electronic Resource
    Thermal stability of implanted dopants in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2238-2240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of measurements of depth profiles and stability against redistribution with annealing up to 800 or 900 °C, for implanted Be, C, Mg, Si, S, Zn, Ge, and Se as dopants in GaN. The results confirm the high-temperature stability of dopants in this material up to temperatures that vary from 600 to 900 °C. S redistributes for temperatures above 600 °C, and Zn and Se, for temperatures above 800 °C. All of the other elements are stable to 900 °C. These results indicate that direct implantation of dopants rather than masked diffusion will probably be necessary to define selective area doping of III–V nitride device structures based on these results for GaN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113178
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  • 13
    Electronic Resource
    Electronic Resource
    Analysis of hydrogen diffusion from proton-exchanged layers in LiNbO3 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 718-720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen profiles for proton-exchanged layers in Z-cut LiNbO3 were obtained by secondary ion mass spectrometry measurements after annealing at 400 °C for times from 6 to 180 min. To fit the measured hydrogen profiles, it was necessary to use two separate Gaussian diffusion profiles which could be designated as a more slowly diffusing substitutional hydrogen on lithium sites and a more rapidly diffusing interstitial hydrogen. At 400 °C, analysis leads to a substitutional hydrogen diffusion coefficient Ds≈4.6×10−12 cm2/s and an interstitial hydrogen diffusion coefficient Di≈1.5×10−11 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109938
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  • 14
    Electronic Resource
    Electronic Resource
    Correlation of refractive index profiles with substitutional hydrogen concentrations in annealed proton-exchanged LiNbO3 waveguides (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2769-2771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of the extraordinary refractive index in a set of annealed z-cut proton-exchanged lithium niobate (LiNbO3) substrates by means of optical prism-coupling measurements and numerical simulations. Values of the index as a function of depth have been determined and fitted with a single Gaussian diffusion expression. At 400 °C, the effective index diffusivity Dn of 4.6×10−12 cm−2/s is nearly identical to the diffusivity of substitutional H in these samples. Furthermore, we find a linear relationship between the increase in the extraordinary refractive index and the substitutional H concentration. At a wavelength of 0.6238 μm, the coefficient for this relationship is ∼1.5×10−23 (H cm−3)−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109255
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  • 15
    Electronic Resource
    Electronic Resource
    Er doping of AlN during growth by metalorganic molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2083-2085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping of AlN during growth by metalorganic molecular beam epitaxy with an Er effusion source has resulted in AlN:Er films exhibiting strong room-temperature 1.54 μm photoluminescence (PL). The luminescence detected in the AlN:Er grown during this study was orders of magnitude greater in intensity than that from ion-implanted samples and represents the first demonstration of strong emission from rare-earth doped, epitaxial group III nitrides. Secondary ion mass spectroscopy was used to verify a dynamic range for this doping technique of 3×1017–2×1021 Er cm−3 with varying effusion cell temperature. The effects of growth temperature on Er incorporation and segregation behavior were also determined. PL studies, including room-temperature and thermal quenching experiments, were conducted. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116887
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  • 16
    Electronic Resource
    Electronic Resource
    Light emission from thermally oxidized silicon nanoparticles (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2684-2686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emission characteristics from silicon nanoparticles consisting of a crystalline core encased in an amorphous oxide shell are presented. The particles were thermally oxidized in the open atmosphere at 800 °C for times from 5 to 160 min in order to decrease the Si core dimensions. Photoluminescence spectra, at low excitation levels, reveal that the light emission shifts to shorter wavelengths as the oxidation time is increased. At high excitation levels, photoluminescence spectra show little or no shift. These results indicate that there are at least two mechanisms involved with light emission from Si nanoparticles, one associated with quantum size effects and another which is independent of size distribution. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112602
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  • 17
    Electronic Resource
    Electronic Resource
    Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2867-2869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of the room temperature forward bias current-voltage behavior of InGaN/AlGaN double heterostructure blue light-emitting diodes demonstrates a significant departure from the usual Is exp(qV/ nkT) behavior where n is the ideality factor which varies between 1 and 2. The observed current-voltage behavior at room temperature may be represented as I=2.7×10−11 exp(5.7V) which suggests a tunneling mechanism. Measurement of the electroluminescence for currents from 0.5 to 100 mA demonstrates that the emission peak shifts to higher energy while increasing in intensity. The shifting peak spectra is due to band filling, a process which results from the injection of holes via tunneling into an empty acceptor impurity band and vacant valence band tails. At currents near 100 mA, a non-shifting band-to-band emission approaches the intensity of the shifting peak spectra. The active layer of these diodes is codoped with both the donor Si and the acceptor Zn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116351
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  • 18
    Electronic Resource
    Electronic Resource
    1.54-μm photoluminescence from Er-implanted GaN and AlN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 992-994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112172
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  • 19
    Electronic Resource
    Electronic Resource
    Thermal stability of hydrogen in LiAlO2 and LiGaO2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3848-3850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen as 2H has been incorporated into LiAlO2 and LiGaO2 by both ion implantation and by exposure to a plasma at 250 °C. In the implanted samples, approximately 50% of the hydrogen is lost from the surface during annealing at 500 °C for 20 min, and essentially all is gone by 700 °C. This hydrogen retention is considerably less than for other materials that are being used as substrates for III-nitride epilayer growth, such as SiC and sapphire. The indiffusion of 2H from a plasma is much faster for LiAlO2 with an apparent diffusivity at 250 °C of ∼10−13 cm−2 s−1, approximately two orders of magnitude larger than for LiGaO2. Hydrogen outdiffusion from LiAlO2 or LiGaO2 substrates during III-nitride epitaxy should not be a significant problem; the hydrogen should have left these materials at temperatures less than epitaxial layer growth temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117125
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  • 20
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaN, AlN, and InN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2724-2726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation depths of ≥1 μm are measured for 2H plasma exposure of GaN and AlN at 250–400 °C for 30 min. The concentration of 2H incorporated is in the range 5–10×1017 cm−3 for GaN and 5–30×1018 cm−3 for AlN under these conditions. No redistribution of the hydrogen is observed for annealing temperatures up to 800 °C, but at 900 °C there is substantial loss of hydrogen from the samples. Similar results are obtained for 2H implantation into GaN, AlN, and InN, with no significant redistribution observed up to 500–600 °C in either AlN or InN, and motion only at 900 °C in GaN. The thermal stability of hydrogen in III-V nitrides explains previous results for Mg-doped GaN grown using NH3, where post-growth annealing at high temperatures was required to achieve appreciable doping efficiencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111455
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