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  • 1990-1994  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8489-8494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence properties and the hydrogen depth distributions of plasma treated GaAs/AlGaAs multiple quantum well (MQW) structures. Specimens grown by molecular beam epitaxy were exposed to a deuterium plasma under different temperature-time conditions. Photoluminescence measurements were made at 4.2 K, using low and high excitation powers, on the hydrogenated samples and on untreated partners. A decrease in the linewidth of the free exciton and an increase in the peak intensity were observed in specimens following plasma treatment. In general, each of the hydrogenated MQW specimens displayed an increase in luminescence efficiency and a diminution of impurity-related peaks after hydrogenation. Secondary ion mass spectrometry measurements yielded depth distributions for 2H and Al atoms. In samples having the best luminescence, the 2H was nearly constant throughout the MQW region, at about 1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353401
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of hydrogen diffusion from proton-exchanged layers in LiNbO3 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 718-720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen profiles for proton-exchanged layers in Z-cut LiNbO3 were obtained by secondary ion mass spectrometry measurements after annealing at 400 °C for times from 6 to 180 min. To fit the measured hydrogen profiles, it was necessary to use two separate Gaussian diffusion profiles which could be designated as a more slowly diffusing substitutional hydrogen on lithium sites and a more rapidly diffusing interstitial hydrogen. At 400 °C, analysis leads to a substitutional hydrogen diffusion coefficient Ds≈4.6×10−12 cm2/s and an interstitial hydrogen diffusion coefficient Di≈1.5×10−11 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109938
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation of refractive index profiles with substitutional hydrogen concentrations in annealed proton-exchanged LiNbO3 waveguides (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2769-2771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of the extraordinary refractive index in a set of annealed z-cut proton-exchanged lithium niobate (LiNbO3) substrates by means of optical prism-coupling measurements and numerical simulations. Values of the index as a function of depth have been determined and fitted with a single Gaussian diffusion expression. At 400 °C, the effective index diffusivity Dn of 4.6×10−12 cm−2/s is nearly identical to the diffusivity of substitutional H in these samples. Furthermore, we find a linear relationship between the increase in the extraordinary refractive index and the substitutional H concentration. At a wavelength of 0.6238 μm, the coefficient for this relationship is ∼1.5×10−23 (H cm−3)−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109255
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Light emission from thermally oxidized silicon nanoparticles (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2684-2686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emission characteristics from silicon nanoparticles consisting of a crystalline core encased in an amorphous oxide shell are presented. The particles were thermally oxidized in the open atmosphere at 800 °C for times from 5 to 160 min in order to decrease the Si core dimensions. Photoluminescence spectra, at low excitation levels, reveal that the light emission shifts to shorter wavelengths as the oxidation time is increased. At high excitation levels, photoluminescence spectra show little or no shift. These results indicate that there are at least two mechanisms involved with light emission from Si nanoparticles, one associated with quantum size effects and another which is independent of size distribution. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112602
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    1.54-μm photoluminescence from Er-implanted GaN and AlN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 992-994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of the 1.54-μm luminescence of optically excited Er3+ in ion-implanted epitaxially grown GaN and AlN films using below band-gap excitation. The Er-implanted layers were co-implanted with oxygen. At room temperature, this luminescence for GaN grown on sapphire is nearly as intense as it is at 6 or 77 K and exhibits many resolved transitions between crystal-field levels of the 4I13/2 first excited multiplet and the 4I15/2 ground multiplet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112172
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaN, AlN, and InN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2724-2726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation depths of ≥1 μm are measured for 2H plasma exposure of GaN and AlN at 250–400 °C for 30 min. The concentration of 2H incorporated is in the range 5–10×1017 cm−3 for GaN and 5–30×1018 cm−3 for AlN under these conditions. No redistribution of the hydrogen is observed for annealing temperatures up to 800 °C, but at 900 °C there is substantial loss of hydrogen from the samples. Similar results are obtained for 2H implantation into GaN, AlN, and InN, with no significant redistribution observed up to 500–600 °C in either AlN or InN, and motion only at 900 °C in GaN. The thermal stability of hydrogen in III-V nitrides explains previous results for Mg-doped GaN grown using NH3, where post-growth annealing at high temperatures was required to achieve appreciable doping efficiencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111455
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Below-bandgap refractive index of AlAs/GaAs multiple quantum wells (1991)
    Springer
    Optical and quantum electronics 23 (1991), S. S883 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Precision reflection measurements were performed on GaAs/AlAs superlattices of the same composition but different layer spacings. Nonlinear-least-squares fits to the data were performed to a single layer. Measurements were extracted for the superlattice thickness, thickness of a disturbed interface layer between the superlattice and substrate, the uniformity in composition and/or spacing and the composition. It was demonstrated that these nondestructive measurements in the infrared region (3000 to 12 000 cm−1) in conjunction with a simple single layer model are capable of accurately yielding the above quantities with high precision.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624977
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    Paper (German National Licenses)
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