Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 962-968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline semiconducting FeSi2 thin films were grown on (100) Si substrates of high resistivity by electron beam evaporation of amorphous Si/Fe ultrathin multilayers in an ultrahigh vacuum system, followed by conventional vacuum furnace (CF) or rapid thermal annealing (RTA). Infrared reflectance and transmittance measurements were employed for optical characterization of the samples at room temperature. The results indicate a direct transition at about 0.85 eV, an indirect transition at about 0.79 eV, and exponential band tail states within the band gap. The quality of the silicide is improved by increasing the annealing temperature from 600 to 800 °C in the RTA process, while the opposite is observed in the CF annealed samples. Transport measurements were performed on a typical β-FeSi2 layer of high quality grown by CF at low temperature. The measured mobility is about 97 cm2/V s and the hole concentration is about 1×1017 cm−3. The mobility is a factor of 10 higher and the hole concentration a factor of 100 lower than the corresponding published data, indicating a significantly improved quality of β-FeSi2 layers. Temperature-dependent measurements indicate that carrier transport is dominated by impurity conduction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362908
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4431-4437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the grain-boundary barrier height of undoped polycrystalline silicon thin-film transistors is developed based on a rodlike structure of the grains with a square cross section and a Gaussian energy distribution of the trapping states at the grain boundaries. An analytical expression for the threshold voltage is derived in terms of the distribution parameters of the grain-boundary trapping states, the grain size, and the gate oxide thickness. Comparison between the developed model and the experimental drain current versus gate voltage data has been made and excellent agreement was obtained. The key parameters affecting the threshold voltage and the channel conductance of the transistor were investigated by computer stimulation. The threshold voltage is mainly affected by the grain size and the gate oxide thickness. For the improvement of the channel conductance, besides the passivation of the grain-boundary trapping states, the increase of the grain size and mainly the scaling down of the gate oxide thickness are the key factors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361752
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Output characteristics of short-channel polycrystalline silicon thin-film transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2177-2183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model for the turn-on current-voltage characteristics of polycrystalline silicon thin-film transistors is presented. The model is based on the drift diffusion-thermionic emission conduction mechanisms and on a continuous distribution in the energy gap of the traps localized at the grain boundaries. The trap distribution and the device parameters involved in the model are determined by fitting the calculated on-state current versus gate voltage curve to the measured one in the linear region. At large drain voltage, the barrier height at the grain boundary becomes asymmetric and the injection of carriers from the lowered barrier side of the boundary is increased resulting in an exponential increase of the drain current with the drain voltage. Using the parameters obtained from the data in the linear region, the output characteristics are calculated. The good agreement between calculated results and experimental data at room temperature and at higher temperatures demonstrates the validity of the proposed current-voltage model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358796
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Conduction in n+-i-n+ thin-film polycrystalline/silicon devices in relation to the film deposition conditions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1104-1110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conduction in n+-i-n+ thin-film polycrystalline/silicon devices, in relation to the deposition conditions of the low-pressure chemically vapor deposited film, is investigated. Transmission electron microscopy study showed the following: (i) By decreasing the growth pressure from 180 to 80 mTorr, the mean grain size increases by a factor of 3. (ii) In the material grown at 180 mTorr, there is a mean dilatation for the d111 lattice plane amounting to 2.7%, while in the material grown at 80 mTorr, the systematic dilatation previously observed is absent. The current-voltage characteristics show a linear behavior in a voltage region and a nonlinear behavior at higher voltages attributed to Joule heating within the sample. The energy gap of the material grown at 80 mTorr is 1.12 eV, while for the material grown at 180 mTorr, it decreases to 0.96 eV. The shrinkage of the energy gap could be due to the high density of "tail states'' close to the conduction or valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340015
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Low-frequency noise in polycrystalline semiconducting FeSi2 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4091-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in polycrystalline semiconducting iron disilicide (β-FeSi2) thin film with the current I as a parameter. The power spectral density of the current fluctuations exhibits a 1/f behavior at low frequencies (f〈100 Hz) and is proportional to Iβ (β〈2). The temperature dependence of the conductivity shows that, at room temperature, the measured noise is related to a thermally activated transport mechanism, which satisfies the Meyer–Neldel rule. A noise theory has been developed on the basis of trapping-detrapping of holes of the valence band and the gap states taking into account mobility inhomogeneity across the thickness of the film. Using the experimental data of Hall, conductivity, and noise measurements, the noise model provides an assessment of the distribution of traps within the energy gap of the β-FeSi2 material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370316
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4238-4242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the substrate bias voltage and the deposition temperature on the electrical characteristics and the 1/f noise of TiNx/n-Si Schottky diodes fabricated by reactive magnetron sputtering are investigated. As the substrate bias voltage varies from −40 to −100 V, the ideality factor of the diodes remain almost unchanged whereas the noise intensity as a function of the current shows a shift parallel by about one order of magnitude. At low current levels, the noise intensity is proportional to the current and is attributed to the mobility and diffusivity fluctuation. At higher current levels, the noise intensity is proportional to the square of the current and is attributed to bulk traps mainly near the interface. Analysis of the noise measurements shows that both the Hooge parameter and the bulk trap density near the interface first are increased and then decreased as the negative substrate bias voltage increases from −40 to −100 V. This is in contrast with the effects of the deposition temperature where we found that the Hooge parameter remains almost constant, while both the ideality factor and the interface states density are decreased as the deposition temperature increases from room temperature to 400 °C. The trap properties of the TiNx/n-Si Schottky diodes are correlated with the stoichiometry of the TiNx films investigated by spectroscopic ellipsometry measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370336
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of polycrystalline silicon layers under solar illumination (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3651-3655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337571
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2832-2838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural, electrical, and low-frequency-noise properties of heterojunctions of amor- phous-carbon (a-C) films grown on either n- or p-type single-crystal silicon are investigated. The a-C films were deposited by rf magnetron sputtering at room temperature with varying the substrate bias Vb, from +10 to −200 V. The study includes measurements of x-ray reflectivity (XRR), low-frequency noise at room temperature, and dark current–voltage (I–V) and capacitance–voltage (C–V) characteristics over a wide temperature range. Analysis of the XRR data indicates the presence of a thin SiC layer between a-C and Si, with thickness increasing up to about 1.8 nm for Vb=−200 V. The results show that the noise properties of the devices are independent of the SiC interlayer and the a-C film deposition conditions, while the noise of the a-C/n-Si heterojunctions is about four orders of magnitude lower than that of the a-C/p-Si heterojunctions. Analysis of the I–V and C–V data shows that the rectification properties of the a-C/n-Si heterojunctions are governed by conventional heterojunction theory, while multistep tunneling is the current conduction mechanism in a-C/p-Si heterojunctions due to a high density of interface states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346654
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Microstructure and its effect on the conductivity of magnetron sputtered carbon thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7954-7959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon thin films were grown by magnetron sputtering at room temperature on silicon substrates, with the substrate bias voltage varying from +10 to −200 V. Transmission electron microscopy analysis has shown that films deposited at Vb=+10 and −40 V are amorphous (α-C), while films deposited at Vb=−200 V are nanocrystalline (nc-C). Temperature dependent conductivity measurements were carried out in the temperature range 300–77 K. With respect to conductivity, the results indicate that the investigated carbon films are classified in three groups: (i) In α-C films deposited at Vb=+10 V (sp2 rich bonds), the variable range hopping (VRH) conduction dominates below 300 K. (ii) In α-C films deposited at negative Vb up to −100 V (sp3 rich bonds), VRH conduction dominates at low temperatures (T〈150 K) and a thermally activated process satisfying the Meyer–Neldel rule at higher temperatures (T〉150 K). (iii) In nc-C film deposited at Vb=−200 V, the conductivity is explained by a heteroquantum-dots model based on a thermal-assisted tunneling process. The earlier differentiation in the conductivity mechanisms may play a significant role in the field electron emission properties of the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376413
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Noise characterization of sputtered amorphous carbon films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5482-5484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in amorphous carbon (α-C) thin films with the current I as the parameter. The α-C films, rich in sp2 bonds, were prepared by rf magnetron sputtering at room temperature. Hall measurements performed at room temperature show that the α-C films are p-type semiconductors with a hole concentration of about 2.8×1018 cm−3. In α-C film grown on oxidized silicon wafer, the current shows an ohmic behavior for low applied voltages, while the conduction mechanism is dominated by the Poole–Frenkel effect for high applied voltages. In the linear voltage region, the power spectral density of the current fluctuations exhibits 1/fγ (with γ〈1) behavior and is proportional to I2. Using a noise model based on trapping–detrapping of holes of the valence band and the gap states of exponential energy distribution, the noise data can provide an assessment of the distribution of traps within the band gap of the α-C material. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317234
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...