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  • 1
    Electronic Resource
    Electronic Resource
    On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2054-2056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of excess stress was originally introduced in a study of elastic strain relaxation in an epitaxial layer grown beyond its critical thickness, where it was proposed as the relevant stress in a kinetic law for dislocation motion. The concept has subsequently been applied in a variety of studies of strain relaxation, but without a standard definition as a basis for quantitative comparisons. The purpose here is to propose a fundamental definition of excess stress as the particular stress measure which is work-conjugate to the Burgers displacement during glide of a threading dislocation in a strained layer. This definition also has the feature of being consistent with definitions of effective stress in kinetic laws of glide in bulk materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351154
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  • 2
    Electronic Resource
    Electronic Resource
    (GaAs)m(AlAs)n short-period superlattice quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2085-2088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattice (SPS) quantum-well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 monolayers of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad-area threshold current density, Jth, for 500-μm-long lasers is 510 A cm−2. The 500-μm-long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19–60 °C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353155
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  • 3
    Electronic Resource
    Electronic Resource
    Surface orientation and stacking fault generation in strained epitaxial growth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7407-7411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been observed that partial dislocation glide and stacking fault introduction occur in diamond cubic materials during tensile mismatched growth on (001) and compressive mismatched growth on (110) and (111). For reversed sense of mismatch, however, only full lattice dislocations are observed for strain relief. The general criteria are presented for when a partial misfit dislocation is possible as a function of growth surface orientation. It is shown that, for zero stacking fault energy, the slip regime (dislocation type) expected during (001) growth will hold for any growth orientation (hkl) for which 0≤h≤k≤l/2, and the opposite regime should occur for (hkl) when l≤k/2≤l. Effects of heterointerfacial line tension and stacking fault energy are also considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354033
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of continuous CoSi2 layers by high Co dose implantation into Si(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1629-1634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanisms for formation of continuous CoSi2 layers by high dose (∼1017 cm−2) Co implantation into Si(100). For single dose implantations, a critical dose exists above which coalescence into a single layer occurs after a vacuum anneal at 1000 °C for 30 min, but below which disconnected, strongly {111} faceted precipitates form. Transmission electron microscopy and Rutherford backscattering suggest that the key condition for continuous layer coalescence to occur is the formation of a connected array of small silicide precipitates either as-implanted or during an intermediate 600 °C anneal. This postulate is supported by the observation that super-critical doses which are builtup by successive subcritical doses and 1000 °C anneals do not coalesce into single layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346643
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  • 5
    Electronic Resource
    Electronic Resource
    Amorphization and regrowth in Si/CoSi2/Si heterostructures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5641-5647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reduction of the defect density in the Si overlayer of Si/CoSi2/Si heterostructures fabricated by mesotaxy has been achieved by selective amorphization and regrowth of the Si. Layer-by-layer regrowth of the silicide with an activation energy of 1.14 eV has also been clearly shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346977
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  • 6
    Electronic Resource
    Electronic Resource
    Interface imperfections in metal/Si multilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2675-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and optical properties of Mo/Si and Ru/Si x-ray multilayers prepared by sputter deposition in argon have been examined using high-resolution transmission electron microscopy, optical profilometry, and x-ray and soft x-ray reflectance. We find that for Ru/Si, similar to previous results for Mo/Si, lower argon pressure during deposition results in smoother layers and higher reflectance. For low-pressure deposited multilayers, interfacial roughness is negligible compared to interfacial diffuseness; the presence of amorphous interlayer regions in both of these systems is the major cause of reduced reflectance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351040
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  • 7
    Electronic Resource
    Electronic Resource
    Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2052-2065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental measurements of misfit dislocation velocities, obtained from in situ transmission electron microscope observations of strained GexSi1−x/Si(100) heterostructures, are compared with predictions of the diffusive double-kink (or "kink pair'') model of dislocation propagation. Good agreement is observed between experiment and theory for buried strained layers with applied stresses in the range of hundreds of MPa. For very thin uncapped strained layers, the diffusive double-kink model does not describe experimental data well. In these structures better agreement between experiment and theory is obtained if we model single-kink nucleation at the epilayer free surface. We compare our experimental data to those of other groups, and show how our modeling can reconcile apparently disparate trends deduced by these other groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349440
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  • 8
    Electronic Resource
    Electronic Resource
    Texture transformations in reactive metal films deposited upon amorphous substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2635-2640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results that demonstrate how interfacial reactions between a metal film and substrate during deposition affect microstructural evolution. In particular, we investigate Ti films deposited on amorphous SiO2 using ultrahigh vacuum transmission electron microscopy. Ti films were deposited in situ at room temperature and were examined using Auger electron spectroscopy and transmission electron microscopy. An initial [hk0] preferred orientation developed in films up to 2.5 nm in thickness. Films between 2.5 and 5.0 nm developed a [001] preferred orientation that persisted in films up to 20.0 nm thick. These data, in conjunction with Auger electron spectra and dark-field microscopy, suggest that growth of Ti films on SiO2 is directly affected by reactions at the Ti/SiO2 interface and that this reaction is responsible for the observed change in preferred orientation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337078
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  • 9
    Electronic Resource
    Electronic Resource
    Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2009-2011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current gain of polycrystalline silicon emitter transistors has been improved by modification of the polycrystalline silicon/silicon interface using a low-energy ion beam. The base current is reduced by a factor of 3 while maintaining ideal current-voltage characteristics. No change in the collector current and the emitter series resistance is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105023
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point-defect concentrations introduced by ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2445-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that strain relaxation during annealing of Si/GexSi1−x/Si heterostructures is significantly enhanced if the strained GexSi1−x layers are implanted with p (B) or n (As) type dopants below the amorphization dose. Comparison of strain relaxation during in situ annealing studies in a transmission electron microscope between unimplanted and implanted structures reveals that the latter show residual strains substantialy below those for unimplanted structures. We propose that this enhanced relaxation is caused by increased dislocation nucleation probabilities due to the high point-defect concentrations arising from implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102904
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