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  • 1
    Electronic Resource
    Electronic Resource
    Titanium and carbon coimplantation into sintered α-SiC and hot-pressed Si3N4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1885-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered α-SiC and hot-pressed Si3N4 were coimplanted with 175 keV Ti+ and 46 keV C+ at doses of 1×1017 cm−2. Energies of Ti+ and C+ were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross-section transmission electron microscopy. The distribution of Ti in α-SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross-section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342924
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of Ni-Mo and of Ni-Ti binary systems (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 248-252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy and Rutherford backscattering techniques were employed to study the mixing rates of NiMo and NiTi binary systems under high-energy ion bombardment. Mixing was carried out by using 1-MeV Au+ ions at various doses. Results show that the amount of mixing of NiTi is about three times higher than NiMo. Cascade collision theory can only account for a maximum of 20% difference in the amount of mixing of these two systems. However, a model based on thermodynamics has been found to predict correctly the amount of mixing of these two systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335719
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  • 3
    Electronic Resource
    Electronic Resource
    Ion beam mixing of metallic and insulating layers on SiC and Si3N4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5263-5266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing of B, ZrO2, and Cr layers with sintered α-SiC, and Y and Cr layers with hot pressed Si3N4 was measured at room temperature. The mixing ion was selected from 1-MeV Ni+, 2-MeV Au+, or 1-MeV O+ ions. The amount of mixing was evaluated from Rutherford backscattering and Auger electron spectroscopies and occasionally from cross-section transmission electron microscopy. It was found that mixing takes place in the B/SiC, Cr/SiC, and Y/Si3N4 systems. No mixing is observed in the ZrO2/SiC and Cr/Si3N4 systems even after high dose ion bombardment. The enthalpy of mixing rule, which states that metals mix with insulators if the reaction enthalpy is negative and do not mix if it is positive, has been examined and found to hold for these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338312
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  • 4
    Electronic Resource
    Electronic Resource
    Heterojunction CdS/CdTe solar cells based on electrodeposited p-CdTe thin films: Fabrication and characterization (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3590-3593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrodeposition technique previously developed by the present authors for in situ growth of p-type CdTe thin films, has been further improved using As as an acceptor dopant. Photovoltaic-quality films were grown on conducting glass and Mo substrates and characterized by scanning electron microscopy, electron probe microanalyses, and Auger electron spectroscopy. These films were subsequently utilized in the construction of inverted photovoltaic cell structures comprising the n-CdS/p-CdTe heterojunction. Efficiencies approaching the 5% level (AM1 insolation) have been obtained thus far on small-area (∼0.20 cm2) devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335735
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  • 5
    Electronic Resource
    Electronic Resource
    High-energy ion irradiation effects on the surfaces of silicon carbide and silicon nitride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4791-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy ion irradiation effects on the surfaces of α-silicon carbide (SiC) and hot-pressed silicon nitride (Si3N4) were studied by optical microscopy, surface profilometry, Auger electron spectroscopy, and transmission electron microscopy (TEM) techniques. Optical microscopy and surface profilometry revealed that 1-MeV Ni+ ion irradiation at a dose of 1×1016 cm−2 produces swelling and roughness on both SiC and Si3N4. Auger electron spectroscopy in combination with sputtering revealed that the SiC surface becomes C rich, whereas the Si3N4 surface becomes Si rich due to ion irradiation. Cross-section TEM analysis of the surface layer of irradiated SiC showed that about 1 μm of material at the surface has become amorphous due to irradiation with 1-MeV Ni+ at a dose of 1×1016 cm−2. Amorphization has also been observed in Si3N4. These results are discussed with reference to the information available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338339
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: Ion-beam mixing of Ni-Mo and Ni-Ti binary systems [J. Appl. Phys. 58, 248 (1985)] (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2798-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336317
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of MoS2 phase in Al2O3, ZrO2, and SiO2 through ion implantation of constituent elements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5169-5175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline α-Al2O3 and yttria-stabilized ZrO2 substrates were coimplanted with 175-keV Mo+ and 74-keV S+ at doses of 1×1017 and 74-keV S+ and 2×1017 cm−2, respectively. An amorphous SiO2 substrate was coimplanted with 175-keV Mo+ and 74 keV S+ at doses of 4.97×1016 and 1.02×1017 cm−2, respectively. The energies of Mo+ and S+ ions were chosen to obtain a nearly overlapping depth profiles in all three substrates. Transmission electron microscopy, Rutherford backscattering, and Auger electron spectroscopy techniques were used to characterize the ion-implanted materials. The formation of MoS2 phase was observed in the as-implanted condition as well as after annealing at 700 °C in all substrates. Thermodynamic calculations were performed to predict the equilibrium binary phase formed in Al2O3, ZrO2, and SiO2 under the present implantation and annealing conditions. The predictions agree with the experimental findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347058
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  • 8
    Electronic Resource
    Electronic Resource
    Mixing of Pt-René N4 alloy under Pt+ bombardment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2257-2259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mixing rates of the Ni-Pt and René N4-Pt systems under high-energy ion bombardment were measured using Rutherford backscattering spectroscopy. The mixing was induced by various fluences of 1-MeV Pt+ ions. The extent of mixing in René N4-Pt was the same as in Ni-Pt, suggesting the absence of any effects of high voume fraction of ordered second phase (gamma prime) on the mixing phenomenon in the former system. The amounts of mixing predicted by the model based on thermochemical effects were very close to those measured, while cascade collision theory could account for only 2%–3% of the mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341064
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  • 9
    Electronic Resource
    Electronic Resource
    Thin-film CuIn1−xGaxSe2 photovoltaic cells from solution-based precursor layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1431-1433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated 15.4% and 12.4% efficient thin-film CuIn1−xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1−xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124716
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  • 10
    Electronic Resource
    Electronic Resource
    Single photon response of photomultiplier tubes
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 242 (1985), S. 156-159 
    Details
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-9002(85)90902-7
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