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  • 1
    Electronic Resource
    Electronic Resource
    Relaxation of radiation damage in silicon planar detectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4072-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by α-particle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature annealing, including self-annealing at room temperature, of the interstitial carbon Ci with a simultaneous increase of the Ci-Oi-complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci-center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357356
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  • 2
    Electronic Resource
    Electronic Resource
    On the effect of processing parameters in the chemical-vapor deposition of YBa2Cu3O7−δ thin films on polycrystalline silver (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7563-7570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7−δ (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O2 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760–800 °C for 3–10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2×104 A/cm2 (77 K, B=0). The films had a thickness of 200–700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65–130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354007
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  • 3
    Electronic Resource
    Electronic Resource
    Structural transitions and thermally averaged infrared spectra of small methanol clusters (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9428-9437 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Classical Monte Carlo and molecular dynamics (MD) simulations were carried out to investigate the structures, the infrared spectra, and the rigid–nonrigid transitions of small methanol clusters (CH3OH)n for n=3–6. The study was motivated by experimental results for these clusters from size specific infrared (IR) dissociation spectroscopy. The MD simulations revealed the following transitions: The trimer passes from a rigid ring configuration into a series of nonrigid open chain structures starting at 197 K. For n=4 and 5 such transitions occur between rings and rapidly fluctuating ring structures at T=357 and 243 K, respectively. For n=6 first a pure isomeric transition between the two energetically lowest isomers of S6 and C2 symmetry is found at 35 K, and then a similar transition to a nonrigid behavior as is observed for n=4 and 5 is seen at 197 K. The measured spectra display in all cases the rigid lowest energy configurations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465477
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  • 4
    Electronic Resource
    Electronic Resource
    Two- and three-body forces in the interaction of He atoms with Xe overlayers adsorbed on (0001) graphite (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6477-6493 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In order to address the problem of three-body interactions in gas–surface scattering, we considered the collision of a He atom with the (0001) surface of graphite coated by a monolayer of Xe. To eliminate the uncertainties connected with errors in the two-body He–Xe interaction, we determined the latter by crossed-beam differential collision cross-section measurements performed at two energies (67.2 and 22.35 meV). These scattering data together with room-temperature bulk diffusion data are then fitted with a Hartree–Fock–dispersion–type function to yield an interaction potential that explains most of the properties of this system within the experimental errors and represents an improvement on previously published He–Xe potentials. Helium diffraction measurements are then carried out from the Xe overlayer and the dependence of the specular intensity from the angle of incidence is carefully determined. Further, a He–surface potential is constructed by adding together the following terms: (1) the He–Xe pairwise sum, (2) the long-range He–(0001)C interaction, (3) the three-body contribution generated by the Axilrod–Teller–Muto term, (4) the so-called surface-mediated three-body interaction He–Xe–(0001)C first considered by A. D. McLachlan [Mol. Phys. 7, 381 (1964)], and finally (5) a small correction which is meant to take into account the nonstationary nature of the surface. Using this potential, well-converged close-coupling scattering calculations are carried out, and their results compared with the data. In general, good agreement is obtained. The agreement can, however, be improved by (a) an increase of about 30% in the contribution of three-body forces, (b) the lowering of the He–graphite long-range attraction coefficient by about 15%, or (c) a reduction of the two-body interaction well depth of 1.6% (the experimental error) together with any combination of the factors under (a) and (b) reduced by an adequate amount. Elimination of the contribution of the graphite surface by studying Xe multilayers is hindered by the uncertainties in the "thermal correction'' [point (5) above] which, due to the multilayer increased "softness,'' becomes an appreciable source of uncertainty.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457364
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: Two- and three-body forces in the interaction of He atoms with Xe overlayers adsorbed on (0001) graphite [J. Chem. Phys. 91, 6477 (1989)] (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4492-4492 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459724
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  • 6
    Electronic Resource
    Electronic Resource
    Local linearization stability (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1844-1847 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that Einstein's equations are always linearization stable around any finite region of space-time. Let (Ω,g0ab ) be any region of space-time, admitting a compact Cauchy surface with nonempty smooth boundary, and with g0ab a sufficiently smooth solution of the vacuum Einstein equation. It is shown that for any solution g1ab of the linearized equation and any open region U⊆Ω, there exists a smooth one-parameter family gλab of solutions on U such that (gλab||λ=0 =g0ab ) ||U and ((d/dλ)gλab =g1ab )||U. By using a result of Choquet-Bruhat and York [The Cauchy Problem, General Relativity and Gravitation, edited by A. Held (Plenum, New York, 1980), Vol. 1] asserting the smoothness of the map that sends initial data into solutions of Einstein's evolution equations the proof of the above theorem is reduced to the proof of a similar theorem for Einstein's constraint equations. The proof of this latter theorem involves the use of the implicit function theorem in Hilbert spaces. This local result on linearization stability asserts, in contrast to the general global case, that linearization about any vacuum solution is locally physically meaningful.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527445
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  • 7
    Electronic Resource
    Electronic Resource
    Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120294
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  • 8
    Electronic Resource
    Electronic Resource
    Spiral growth in epitaxial YBa2Cu3O7−x thin films produced by high deposition rate chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 485-486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technologically useful chemical vapor deposition process with high growth rate ((approximately-greater-than)4 μm/h) was developed for the epitaxial growth of YBa2Cu3O7−x (YBCO) thin films. Even at the high growth rate used in this process, a spiral growth mechanism was observed and the films grown had electrical (Tc=92 K, Jc of 2×106A/cm2 at 77 K) and structural properties equal to films produced by physical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108914
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  • 9
    Electronic Resource
    Electronic Resource
    State-selective control for vibrational excitation and dissociation of diatomic molecules with shaped ultrashort infrared laser pulses (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 1862-1879 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ultrafast state-selective dynamics of diatomic molecules in the electronic ground state under the control of infrared picosecond and femtosecond shaped laser pulses is investigated for the discrete vibrational bound states and for the dissociative continuum states. Quantum dynamics in a classical laser field is simulated for a one-dimensional nonrotating dissociative Morse oscillator, representing the local OH bond in the H2O and HOD molecules. Computer simulations are based on two approaches — exact treatment by the time-dependent Schrödinger equation and approximate treatment by integro-differential equations for the probability amplitudes of the bound states only. Combination of these two approaches is useful to reveal mechanisms underlying selective excitation of the continuum states and above-threshold dissociation in a single electronic state and for designing optimal laser fields to control selective preparation of the high-lying bound states and the continuum states. Optimal laser fields can be designed to yield almost 100% selective preparation of any prescribed bound state, including those close to the dissociation threshold. State-selective preparation of the highest bound state may be accompanied by the appearance of a quasi-bound molecular state in the continuum with the kinetic energy of the fragments being close to zero. The respective above-threshold dissociation spectrum contains an additional, zero-order peak. The laser-induced dissociation from selectively prepared high-lying bound states is shown to be very efficient, with the dissociation probability approaching the maximal value. Flexible tools of state-selective laser control are developed which enable one to achieve selective control of the dissociation spectra resulting in time-selective and space-selective control of the dissociation fragments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472058
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of splitting the dose of esomeprazole on gastric acidity and nocturnal acid breakthrough (2004)
    Oxford, UK : Blackwell Science Ltd
    Alimentary pharmacology & therapeutics 19 (2004), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background : Twice-daily dosing is increasingly used to improve gastric acid control, although not all proton-pump inhibitors are more effective when doses are split. Standard dose esomeprazole provides better gastric acid control than other standard dose proton-pump inhibitors.Aims : To compare the effect of standard dose esomeprazole (1 × 40 mg) with 20 mg b.d. on gastric acidity.Methods : Thirteen healthy subjects participated in this crossover study, receiving esomeprazole 2 × 20 mg and 1 × 40 mg for 7 days in random order with a washout period of at least 7 days. Gastric 24-h pH was measured on days 1, 2 and 6.Results : Median gastric 24-h pH was higher during 2  × 20 mg esomeprazole on day 2 (P 〈 0.01), no differences were detected on day 6. Night-time gastric acid suppression was significantly improved by 2 × 20 mg esomeprazole on all study days (P 〈 0.05). Nocturnal acid breakthrough was observed on all study days in subjects receiving 1 × 40 mg, but in only 85% (first night), 64% (second night), and 45% of subjects (sixth night) with 2 × 20 mg (P 〈 0.05).Conclusion : Splitting the esomeprazole dose improves initial acid suppression, this effect starts at the first night. Maximal benefit is achieved on day 2, while the effect on night-time acid control is detectable during the entire first week of treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2036.2004.01949.x
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