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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 110 (1983), S. 940-944 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract  It is generally accepted that early human prostate cancers reveal higher androgen dependency than do advanced ones. In the present study, we examined whether the animal model of prostate cancer has already lost androgen dependency at the early stages of carcinogenesis. At experimental week 46, androgen deprivation was induced in rats and the incidences of atypical hyperplasia and cancer were examined in the ventral, dorsolateral prostate, coagulating glands, and seminal vesicles. Androgen deprivation significantly lowered the incidence of atypical hyperplasia in all four organs. As for the incidence of cancer, no significant differences were observed in the coagulating glands and seminal vesicles. Regarding atypical hyperplasia, androgen deprivation significantly decreased the proliferative cell nuclear antigen labeling index in the coagulating gland and seminal vesicles. The presence of cancer was also decreased in the coagulating gland but not in the seminal vesicles. With control group specimens, more intense staining of androgen receptor was observed in atypical hyperplasias than in cancers. Compared with the atypical hyperplasias, the cancers revealed low androgen dependency at the early stages of carcinogenesis. The cancers in the seminal vesicles also revealed higher androgen independency than did those in the coagulating gland.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, soft magnetic properties, magnetostriction, grain size and volume fraction of the residual amorphous phase have been studied for an amorphous Fe91Zr7B2 alloy annealed for periods of 60 s–1080 ks, at temperatures of 823–973 K. The highest permeability (at 1 kHz and 0.4 A/m) 31,000 and smallest coercivity 4.2 A/m are obtained for the sample annealed at 923 K for 60 s, where a small grain size (≈12 nm) and about 35% of the residual amorphous phase are measured. The coercivity of the nanocrystalline alloy varies as the 3rd power of the grain size, corresponding to the case where the magnetically coupled region has a dimensionality between two and three. This slightly low dimensionality is presumed to be due to the alignment of the magnetization in the sample plane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6270-6272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the local structural anisotropy of Tb/Fe multilayers using linear polarized synchrotron radiation. X-ray absorption measurements were performed at Fe K edge (7.1 keV) using normal and glancing angle incident photon. From the Fe extended x-ray absorption fine structure (EXAFS), the local structural anisotropy was found for all multilayers as a slight difference of oscillation amplitude between the two incident directions. From the Fourier transformed EXAFS spectra, it is found that the local structural anisotropy shows the maximum at bilayer period of about 1 nm, where perpendicular magnetic anisotropy also shows the maximum value in various rare-earth/transition metal multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 979-982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF laser irradiation (248-nm or 5-eV photons) during the chemical vapor deposition of Si from SiH4 has been used to periodically melt and rapidly resolidify thin layers of continuously deposited material. From one-dimensional heat-flow calculations, the increase in the average film growth temperature for the conditions used in these experiments was less than 1° C, the melt depth ranged from ∼5 to 40 nm, and the resolidification velocity was 2 to 3 ms−1. By proper choice of laser energy density E, pulse repetition rate f, and film deposition rate R, the melt depth was adjusted to correspond to a value slightly larger than the film thickness deposited between pulses. Using this procedure, we have grown polycrystalline Si films on SiO2 and Si single crystals on (100)Si substrates at average growth temperatures Ts between 535 and 650 °C. The polycrystalline films had average grain sizes of 1 to 2 μm with a (111) preferred orientation. Films grown without laser irradiation, but otherwise under the same conditions, were amorphous at Ts〈580 °C and fine-grained polycrystalline at higher temperatures. The room-temperature conductivity of irradiated In-doped polycrystalline films grown at Ts=565 °C was ∼5 orders of magnitude higher than the conductivity of unirradiated films. Irradiated single-crystal films doped with B exhibited room-temperature hole mobilities which were near the maximum theoretical bulk values for the corresponding carrier concentrations (∼1018 cm−3).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4400-4402 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the mean hyperfine field of the residual intergranular amorphous phase 〈Bhf〉 and the coercivity Hc in various nanocrystalline soft magnetic samples has been investigated in order to clarify the effect of the spontaneous magnetization in the grain boundary region on their magnetic softness. Nanocrystalline samples with various 〈Bhf〉 values were prepared by annealing an amorphous Fe91Zr7B2 precursor for periods of 60 s–108 ks, at temperatures of 823–973 K. Hc shows a clear tendency to decrease with increasing 〈Bhf〉 or decreasing volume fraction of the residual amorphous phase. These effects of the residual amorphous phase on Hc are well understood within the framework of our extended two-phase random anisotropy model where both the exchange stiffness constant and volume fraction of the grain boundary phase are relevant to the exchange correlation length. Our results indicate that the exchange stiffness constant of the intergranular region varies as the square of the spontaneous magnetization of the residual amorphous phase. A small exchange stiffness constant on the order of 10−13 J/m is predicted for the residual amorphous phase in the Fe–Zr–B alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4231-4239 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the alternating current plasma display panel, a widespread discharge can take place accidentally in a large number of cells in the upper or lower panel ends. The undesirable discharge is referred to as global breakdown. This is a serious problem, with consequences not only for display quality, but also for product reliability. The mechanism of the global breakdown was examined experimentally using a surface electrometer and theoretically using plasma simulation. From these examinations, the global breakdown mechanism was clarified as follows. Global breakdown was accompanied by charge separation in the horizontal direction of the panel. This charge separation was caused by electron transport downward in the panel during the address discharge. The electron transport formed a negative wall charge on the phosphor surface. When the wall voltage exceeded the insulation voltage of the protective layer, global breakdown occurred. Furthermore, it was clarified that increasing the front dielectric thickness or reducing the back dielectric thickness could suppress the electron transport during the address discharge. These optimizations of cell geometry could eliminate the global breakdown. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5726-5732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-cluster-assembled films have been prepared using a size-controllable cluster beam deposition system, by which monodispersed Co clusters with a mean diameter, d=6–13 nm are available. Their morphology and magnetic properties have been studied by scanning electron microscopy (SEM), small-angle x-ray scattering (SAXS) and magnetization measurements. The SEM images show that the film has a porous structure consisting of fine grains without a columnar texture and its density is about 25% of the bulk Co. The SAXS measurements indicate that monodispersivity of the incident clusters is maintained through their assembling process only for d=13 nm. All the specimens exhibit ferromagnetic behavior at room temperature and the magnetic coercive field Hc rapidly increases with decreasing temperature: Hc=168 kA/m (2.1 kOe) at 5 K. Such an enhancement in Hc is ascribed to the exchange anisotropy which arises from the antiferromagnetic Co–oxide layers covering the Co clusters, and to the assemblies of single-domain ferromagnetic clusters with the structure modification and magnetic interaction among them. The monotonic increase in Hc at 300 K with increasing d is simply understood in terms of the single-domain particle theory. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2775-2777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate an analytical model for concentration profiles of reactive gas-phase species adjacent to surfaces, as determined by optical probe techniques. The model is illustrated with measurements of CF2, detected by laser-induced fluorescence, above silicon and other substrates. Conditions under which the model is applicable are discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6216-6223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma discharge due to a sustaining pulse of an alternating current plasma display panel was analyzed using a two-dimensional particle-in-cell code, and basic characteristics of the plasma discharge were calculated. The characteristics of the plasma discharge due to a sustaining pulse are as follows. (i) A large amount of space charge remained after drawing the discharge current. This excess space charge did not contribute to wall charge formation or ultraviolet radiation. (ii) The electron energy distribution function was evaluated and could be well fitted by the Druyvesteyn distribution in the high-energy region. The Druyvesteyn distribution was a consequence of the cross section for electron-Ne elastic scattering. (iii) The calculated ultraviolet radiation efficiency η of the plasma discharge due to a sustaining pulse was between 5.51% and 30.7%. Examination of the sensitivity of the efficiency to the electron temperature showed that reducing the electron temperature was a key to improving the efficiency. (iv) A detailed understanding of the conditions for a stable plasma discharge, memory margin, firing voltage, and electrode voltage of the sustaining pulse were obtained from the voltage transfer curve. The voltage transfer curve could be used to optimize the discharge cell design. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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