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  • 1
    Electronic Resource
    Electronic Resource
    Formation of amorphous interlayers in ultrahigh vacuum deposited yttrium thin films on (111)Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5280-5282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of amorphous interlayers (a interlayers) has been observed in the interfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures. The observation of the a interlayer in the Y/Si system represents the first report of solid-state amorphization for rare-earth metal/Si systems. The Y/Si system is also the only system found to date among all metal/Si systems in which the a interlayer can be grown to a thickness exceeding 10 nm during deposition at room temperature. A process involving significant diffusion of both Y and Si atoms is proposed to account for the dependence of amorphization on the thickness of deposited yttrium films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353760
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 on (111)Si inside miniature-size oxide openings by rapid thermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4282-4285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of CoSi2 on (111)Si inside two-dimensional and linear oxide openings by rapid thermal annealing has been investigated by transmission electron microscopy. Both annealing temperature and time were found to be critical in obtaining 100% epitaxy. The size of oxide openings and annealing temperature were found to exert strong influences on the morphology of epitaxial CoSi2 on silicon. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. The change in morphology of epitaxial CoSi2 with the size of oxide openings in the present study indicated that interfacial energy and/or stress, in addition to the surface energy, are important in determining the morphology of epitaxial CoSi2 on (111)Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348400
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayers by solid-state diffusion in polycrystalline Zr and Hf thin films on (111)Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4002-4007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of an amorphous (a-)interlayer in polycrystalline Zr and Hf thin films on (111)Si have been investigated by cross-sectional transmission electron microscopy. The growth of the a-interlayer in group-IVb metals and silicon systems was found to exhibit similar behaviors. The growth was found to follow a linear growth law initially. The growth rate then slows down and deviates from a linear growth law as a critical thickness of the a-interlayer was reached. Crystalline silicide (ZrSi or HfSi) was found to nucleate at the a-interlayer/Si interface in samples after prolonged and/or high-temperature annealing. Silicon atoms were found to be the dominant diffusing species during the formation of amorphous alloys. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be 1.4 eV, 17 nm and 1.2 eV, 27 nm in Zr/Si and Hf/Si systems, respectively. The correlations among the differences in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free-energy difference in forming amorphous phase, as well as the atomic mobility in Ti/Si, Zr/Si, and Hf/Si systems are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346262
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of vacancy ordering and defect structure in epitaxial YSi2−x thin films on (111)Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3307-3312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of vacancy ordering and defect structure in epitaxial YSi2−x thin films on (111)Si have been studied by both conventional and high-resolution transmission electron microscopy. Epitaxial YSi2−x with an ordered vacancy structure was grown on (111)Si by rapid thermal annealing. In samples annealed at 500 °C for 120 s epitaxial YSi2−x was found to form. After annealing at 600 °C for 15 s, the appearance of additional diffraction spots is attributed to the formation of an ordered vacancy superstructure in the epitaxial YSi2−x thin films. In samples annealed at 600 °C for longer time or higher temperatures, the splitting of extra diffraction spots is correlated to the formation of an out-of-step structure. Streaking of the split diffraction spots in the diffraction pattern is attributed to the presence of an out-of-step structure with a range of M values. The M was found to settle down to 2 after high-temperature and/or long time annealing. Planar defects in YSi2−x films were analyzed to be stacking faults on {101¯0} planes with 1/6 〈1¯21¯3〉 displacement vectors. Computer simulation was carried out to determine the atomic structure of stacking fault. The simulated images are seen to match rather well with experimental images taken under two different values of defocus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350950
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  • 5
    Electronic Resource
    Electronic Resource
    Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7322-7324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347583
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of NiSi2 on high-dose ion-implanted (001) Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 653-658 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of polycrystalline NiSi2 on high-dose BF+2-, Si+-, B+-, F+-, As+-, and P+-implanted (001) Si has been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurements. The surface coverage and grain size of polycrystalline NiSi2 were found to be significantly influenced by the implantation species in silicon substrate. In Si+-, B+-, As+-, and P+-implanted samples, agglomeration of NiSi2 became very severe after 800 °C, 1-h annealing. The average grain sizes were larger than 0.5 μm. In contrast, almost full surface coverage was found in F+- and BF+2-implanted samples after 900 °C, 1-h annealing. The growth of laterally uniform NiSi2 and resistance to agglomeration at high temperatures in BF+2- and F+-implanted samples are attributed to the retardation of the growth of NiSi2 grains by the presence of fluorine bubbles at the grain boundaries. Sheet resistance data were found to correlate well with the morphological and microstructural observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351350
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  • 7
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2161-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si have been investigated by cross-sectional transmission electron microscopy. The growth of a-interlayers in Nb/Si and Ta/Si systems was found to exhibit similar behaviors. The growth was found to follow a linear growth law initially in sample annealed at 450–500 °C and 550–625 °C for Nb/Si and Ta/Si, respectively. The growth then slows down and deviates from a linear growth law as a critical thickness of a-interlayer was reached. The activation energy for the linear growth of a-interlayer was found to be 0.8±0.3 and 0.9±0.3 eV for Nb/Si and Ta/Si, respectively. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in Ti/Si, Zr/Si, Hf/Si, Ta/Si, and Nb/Si systems are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348744
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical and microstructural characteristics of Ti contacts on (001)Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2590-2597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of polycrystalline silicide (p-silicide) compared with that in Ti/p+-Si samples with BF2+ implantation. Amorphous interlayers (a-interlayers) were found to be present in both Ti/n-Si and Ti/p-Si samples annealed at temperatures of and lower than 450 °C. Although the Schottky barrier heights (SBH's) vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBH's at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be about 0.52–0.54 and 0.59–0.57 eV, respectively. The specific contact resistance (ρc) in the Ti/n+-Si system was measured to be the lowest with a value of 1.4×10−7 Ω cm2 when the a interlayer is present. In Ti/p+-Si system, the minimum ρc is about 3×10−7 Ω cm2. The variation in contact resistance with annealing temperature for both Ti/n+-Si and Ti/p+-Si samples is correlated to the change in dopant concentration beneath the contacts as well as microstructures. In the temperature regime where the a interlayer is in contact with the silicon substrate, the junction diode leakage current densities (Jleak's) are considerably lower than those in samples annealed at higher temperatures. The Jleak at −6 V reverse bias is lower than 1 nA/cm2. The breakdown voltage is about 14 V (16 V) for the n+/p (p+/n) junction. The thickness of consumed Si is less in samples annealed at low temperature, and the a-interlayer/Si or p-silicide/Si interface is accordingly farther away from the junction as well as the end-of-range defects. The interface of p-silicide/Si is rougher than that of a-interlayer/Si. In addition, the roughness of the p-silicide/Si interface increases with annealing temperature. For both p+/n and n+/p junctions annealed at 900 °C, rough p-silicide/Si interfaces are thought to lead to spiking and increase the leakage currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354672
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of the oxidation kinetics of NiSi2 on (111)Si by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1001-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscopy study of oxidation kinetics of NiSi2 for both dry and wet oxidation has been carried out. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of NiSi2 did not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.87 and 1.94 eV (with an error bar of ±0.1 eV), respectively. On the other hand, activation energies for parabolic and linear growth were found to be 1.72 and 1.59 eV (with an error bar of ±0.1 eV), respectively, for wet oxidation. The activation energy of parabolic rate constant is seen to be substantially different from those obtained previously. The difference is attributed to the occurrence and absence of islanding during oxidation in the previous and present study, correspondingly. Compared to the oxidation of TiSi2 and pure silicon, a model based on the dominant diffusing species through silicide, i.e., metal and Si for NiSi2 and TiSi2, respectively, is proposed to explain the substantial difference and closeness in linear activation energies of wet oxidation between NiSi2, TiSi2, and pure silicon, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354945
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on (111)Si at low temperatures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8258-8266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy, and x-ray diffraction. A 10-nm-thick yttrium thin film, deposited onto (111)Si at room temperature, was found to completely intermix with Si to form an 11-nm-thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20- to 60-nm-thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5-nm-thick amorphous layer were found to be present simultaneously. Good correlations were found among difference in atomic size between metal and Si atoms, the calculated free energy of mixing as well as the critical and maximum amorphous interlayer thickness for the Y/Si and a number of refractory metal/Si systems. The Y/Si system is the only system found up to date among all metal/Si systems that the a interlayer can be grown to a thickness exceeding 10 nm during deposition at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353444
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