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  • 1
    Digitale Medien
    Digitale Medien
    Properties of plasma-enhanced chemical-vapor-deposited a-SiNx:H by various dilution gases (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3645-3655 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of dilution gases on hydrogenated amorphous silicon nitride (a-SiNx:H) films were investigated. Silane and ammonia were used as the reactive species, while nitrogen, helium, hydrogen, and argon were used as the dilution gases in a plasma-enhanced chemical vapor-deposition system at a substrate temperature of 300 °C. The electrical, physical, and chemical properties of the a-SiNx:H films were found to be highly sensitive to the various kinds and flow rates of the carrier gases in the deposition. Additionally, the physical properties of growth rate, refractive index, and etching rate were also investigated. The hydrogen bonding configuration was explored by infrared spectroscopy. The total hydrogen concentrations for all a-SiNx:H films were observed to be smaller than 3.0×1022 cm−3. The electrical properties were characterized by I-V and C-V measurements in metal-insulator-semiconductor structures. The breakdown strength was determined at the current density of 3 mA/cm2; in addition, the dominant mode of electronic conduction would appear to be the Poole–Frenkel emission. The interface trap state density Dit which ranged from 3.4×1011 to 1.3×1012 cm−2 eV−1 was evaluated by the C-V characteristics. Finally, the influences of the gas dilution in the a-SiNx:H films, as applied to the devices, were investigated by using the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). Analyses of the transfer characteristics of the TFT devices revealed that the density of deep gap states is 4×1012 cm−2 eV−1 and the field-effect mobility μFE is changing from 0.37 to 1.45 cm2/V s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357428
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  • 2
    Digitale Medien
    Digitale Medien
    Adhesion enhancement of ion beam mixed Cu/Al/polyimide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 135-138 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cu (400 Å)/polyimide was mixed with 80 keV Ar+ and N2+ from 1.0×1015 to 2.0×1016 ions/cm2. The same processes were repeated for the Cu (400 Å)/Al (50 Å)/polyimide system which has Al as a buffer layer. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy was employed to investigate the change in the chemical bonds of the ion beam mixed polyimide substrate and the intermediate effects for the adhesion enhancement in Cu/Al/polyimide. Two distinct tendencies are observed in the adhesion strength: Cu/Al/polyimide is more adhesive than Cu/polyimide after ion beam mixing, and N2+ ions are more effective in the adhesion enhancement than Ar+. The formation of an interlayer compound of CuAl2O4 accounts for the former, while the latter is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety which are known as adhesion promoters. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363999
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  • 3
    Digitale Medien
    Digitale Medien
    Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361405
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  • 4
    Digitale Medien
    Digitale Medien
    20-O-β-D-Glucopyranosyl-20 (S)-protopanaxadiol (compound K) induces expression of hyaluronan synthase 2 gene in transformed human keratinocytes and fibroblasts and increases hyaluronan in hairless mouse skin (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Ginsenosides, the major active ingredient of ginseng, show a variety of biomedical efficacies such as anti-aging, anti-oxidation and anti-inflammatory activities. To understand the effects of 20-O-β-D-glucopyranosyl-20 (S)-protopanaxadiol (compound K), one of the major metabolites of ginsenosides on the skin, we assessed the expression level of approximately 100 transcripts in compound K-treated HaCaT cells using cDNA microarray analysis. Compound K treatment induced differential expression of 40 genes, which have been reported to be involved in the organization of the structure of the extracellular matrix as well as defense responses in human skin cells. One of the most interesting findings is a two-fold increase in hyaluronan synthase2 (HAS2) gene expression by compound K. We found that change in expression of HAS2 gene represents a specific response of HaCaT cells to compound K because hyaluronan synthase 1,3 was not changed by treatment with compound K. We also demonstrated that the compound K effectively induced hyaluronan synthesis in human skin cells and hairless mouse skin. A human clinical study indicated that topical application of compound K containing oil-in-water emulsion showed improvement of xerosis, wrinkle and fine lines in the aged skin. We concluded that compound K has anti-aging effects by the induction of HAS2 gene expression and following hyaluronan synthase.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-2494.2004.00244_2.x
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  • 5
    Digitale Medien
    Digitale Medien
    Peritonitis following diagnostic laparoscopy due to injury to a vesicourachal diverticulum (1989)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 96 (1989), S. 0 
    Details
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-0528.1989.tb02399.x
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  • 6
    Digitale Medien
    Digitale Medien
    High-barrier height metal-insulator-semiconductor diodes on n-InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4051-4056 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Metal-insulator-semiconductor diodes were fabricated using Pd, Ni, and Au contacts on n-InP covered by a 40-A(ring) chemically grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3+some InPO3 near the surface and mixed oxide+InP near the interface. Pd devices gave the highest-barrier height of 0.80 eV and the lowest reverse saturation current density of 3×10−8 A/cm2. Current-voltage-temperature and capacitance-voltage-temperature data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism with surface states 0.4 eV above the valence-band level. Richardson plots gave good straight lines when empirically corrected using barrier height divided by ideality factor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343331
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  • 7
    Digitale Medien
    Digitale Medien
    Mass spectrometric characterization of BCl3/SF6 plasmas (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4507-4509 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Significant increases in the etch rates of both GaAs and GaN have been observed with the addition of SF6 to BCl3 plasmas. Mass spectrometric characterization of neutrals in these gas mixtures shows that increasing the SF6 percentage in the flow enhances the dissociation of BCl3, resulting in nearly 100% dissociation at 70% SF6. This increased dissociation is believed to be due to electron attachment heating. Both Cl and Cl2 mass intensities also maximize at 70% SF6. The detection of BClF and BCl2F suggest the possibility of reactions occurring between BCl and BCl2 radicals and fluorine, which may inhibit the recombination of Cl. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1309036
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  • 8
    Digitale Medien
    Digitale Medien
    Erratum: A coupled cluster approach with triple excitations [J. Chem. Phys. 81, 5906 (1984)] (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 5761-5761 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.448990
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  • 9
    Digitale Medien
    Digitale Medien
    Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345011
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  • 10
    Digitale Medien
    Digitale Medien
    Nonlinear optical properties of benzimidazobenzophenanthroline type ladder polymers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 712-714 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Third-order optical susceptibilities (χ(3)) of poly{(7-oxo-7, 10H-benz[de]imidazo[4',5':5,6]benzimidazo [2,1-a]isoquinoline-3,4:10,11-tetrayl)-carbonyl}, referred to as BBL, and poly(6,9-dihydro-6,9-dioxobisbenzimidazo[2,1b:1',2'j] benzo[1mn]-[3,8]phenanthroline-3,12-diyl), known as BBB, have been determined using the technique of degenerate four-wave mixing (DFWM) at 1.064 μm. BBL has a χ(3)xxxx=(1.5±0.4)×10−11 esu, three times as large as that of BBB and 38 times as large as that of CS2. Electrochemical doping led to a small (〈30%) increase in the third-order susceptibility of BBL.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102689
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