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  • 1
    Digitale Medien
    Digitale Medien
    Characterization of processing-induced defects in high-purity InP by photoluminescence (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351783
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  • 2
    Digitale Medien
    Digitale Medien
    Si acceptor excited states in ion-implanted InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5171-5173 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence has been used to investigate the behavior of Si-implanted InP, submitted to a postimplantation rapid thermal annealing. Compared with the non-implanted material, the implanted crystal displays a new broad band around 1.382 eV, in the low temperature (2 K) spectra. This band appears to be made of two unresolved recombination paths ascribed to the electron–acceptor (e,A°) and donor–acceptor pair recombinations of the silicon acceptor impurity substituted on phosphorus site. Besides the Zn-related transitions to s and p excited states, the selective excitation of the donor–acceptor pairs reveals additional recombination paths, ascribed to transitions to 2s3/2 and 2p5/2 (Γ7 and Γ8) excited states of silicon. The acceptor behavior of Si in InP is hence given a definite support by this work. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359751
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  • 3
    Digitale Medien
    Digitale Medien
    Electron spin resonance studies in β-FeSi2 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1678-1681 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electron spin resonance studies have been carried out in the temperature range 130–300 K on semiconducting β-FeSi2 single crystals grown by a chemical vapor transport technique. Two anisotropic doublets with apparent g factors in the range 2.025–2.05 and 1.98–2.03, as well as one complex signal having an isotropic g factor of 2.0195 and exhibiting a five-line hyperfine structure, have been detected. The doublet signals are believed to arise from spin triplet (S=1) states of, presumably, substitutional Ni2+ transition ions, whereas the signal exhibiting the hyperfine structure has been attributed to the spin of a hole, captured by silicon vacancy and interacting with nuclear spins of four iron atoms in the first shell surrounding of the silicon vacancy. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362967
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  • 4
    Digitale Medien
    Digitale Medien
    Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1289-1291 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CuInSe2 epitaxial films grown on (001)-oriented GaAs substrates by molecular beam epitaxy have been characterized by means of low temperature photoluminescence spectroscopy at T=2–102 K. Distinct emission lines were observed near the band gap, and have been investigated further with varying sample temperature. An emission at 1.0386 eV (EX1) became broader with increasing sample temperature, and still remained up to T=102 K. A distinct, sharp emission at 1.0311 eV (IX1) which disappeared at a significantly lower temperature than the other peaks was observed only in films with weak donor-related emissions. We attribute such emissions to the ground-state free exciton [FEn=1] and exciton bound to neutral acceptor [A0,X], respectively. The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114400
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  • 5
    Digitale Medien
    Digitale Medien
    Excited-state spectroscopy of identified Mg acceptor in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102781
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  • 6
    Digitale Medien
    Digitale Medien
    Photoluminescence study of the annealing behavior of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2248-2253 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In neutron-transmutation-doped GaAs irradiated with various fast neutron fluences, the annealing behavior of band-germanium acceptor [Ge(B-A)] transitions has been evaluated using the photoluminescence technique. In the fast neutron irradiation of ≤7.0×1017 cm−2, a few percent of transmuted Ge atoms behave as acceptors in As sites and more than 98% of the transmuted Ge atoms activate as donors in Ga sites. In the fast neutron irradiation of 3.7×1018 cm−2, the shift of Ge(B-A) transitions towards lower energies originates from the band-edge distortion. Removing the band-edge distortion by annealing above 790 °C leads to the increase in the Ge acceptor, accompanied by an increase of the peak intensity of Ge(B-A) transitions. The lower electrical activation of transmuted impurities (∼75%) arises from the high-temperature annealing required to remove the radiation damage. On annealing out the radiation damage, the peak shift of Ge(B-A) transitions based on the increase in the free carrier is discussed using the Burstein–Moss model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342837
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  • 7
    Digitale Medien
    Digitale Medien
    Low residual impurities assessment by photoluminescence in multistep wafer-annealed semi-insulating Czochralski-grown GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107679
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  • 8
    Digitale Medien
    Digitale Medien
    Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3597-3599 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence spectroscopy is used to investigate some of the recently reported effects of implantation dose and dose rate on the electrical activation of Si dopant in GaAs. Two new luminescence bands are observed to emerge in our spectra with the increasing Si dose at doses (∼2×1013 cm−2) where the carrier concentration is known to saturate. The higher energy band at the ∼840–880 nm wavelength shows a more pronounced rise in strength with increase in dose rate from 3 nA/cm2 beam current density to 60 nA/cm2. The deep-level luminescence band extending from ∼1000 to ∼1600 nm wavelength dominates the spectra for both the low-dose-rate and high-dose-rate samples above a dose of ∼2×1013 cm−2. The observed rapid generation of type-I dislocations above this dose suggests this band is related to some impurity Cottrell atmospheres around the dislocations in GaAs. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119244
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  • 9
    Digitale Medien
    Digitale Medien
    Observations on quick fluctuation of atom images of Si crystal lattice under 800 kV electron irradiation
    Amsterdam : Elsevier
    Ultramicroscopy 39 (1991), S. 171-179 
    Details
    ISSN: 0304-3991
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Allgemeine Naturwissenschaft , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(91)90195-C
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  • 10
    Digitale Medien
    Digitale Medien
    Theoretical and observed electron microscope images of impurity atoms in thin crystals formed by L-shell ionization electrons
    Amsterdam : Elsevier
    Ultramicroscopy 56 (1994), S. 108-120 
    Details
    ISSN: 0304-3991
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Allgemeine Naturwissenschaft , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(94)90150-3
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