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  • 1
    Electronic Resource
    Electronic Resource
    Electron-beam-induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3630-3634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB)-induced pattern etching of AlxGa1−xAs (0≤x≤0.7) is described. An ultra-thin GaAs oxide at the surface of a GaAs/AlGaAs heterostructure wafer is used as a resist film. The GaAs oxide resist can be selectively removed by EB irradiation in a Cl2 ambient, which results in pattern etching of GaAs/AlGaAs. The etch rate of AlGaAs is examined as functions of substrate temperature, AlAs mole fraction, and EB flux. The results indicate that pattern etching is realized in the AlAs mole fraction range of 0≤x≤0.7
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346325
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2392-2399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage in GaAs induced by Ga+ focused-ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) intensity measurements as functions of ion energy, ion dose, and substrate temperature. By decreasing the ion energy from 10 to 1 keV, the damage depth decrease to 1/5, where damage depth is taken as the thickness at which the PL intensity recovers by wet etching. The damage depth is shallower when the etching yield is larger with the same ion energy. By increasing the ion dose, the normalized PL intensity decreases, but damage depth is nearly constant. Over 1015 ion dose, the normalized PL intensity shows a constant value. By increasing the sample temperature, the damage depth becomes shallower. At 150 °C with ion energy of 1 keV, the damage depth is less than 0.5 μm, which is the detection limit of the PL measurement in GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346497
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs pattern etching with little damage by a combination of Ga+focused-ion-beam irradiation and subsequent Cl2 gas etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6415-6419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern formation on GaAs by Ga+ focused-ion-beam (FIB) irradiation and subsequent Cl2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga+ FIB-assisted Cl2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga+-ion doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346862
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  • 4
    Electronic Resource
    Electronic Resource
    Novel electron-beam lithography for in situ patterning of GaAs using an oxidized surface thin layer as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4297-4303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first demonstration of in situ electron-beam (EB) lithography is reported, where a photo-oxidized surface thin layer of GaAs is used for a resist. The in situ EB lithography sequence consists of five processes, i.e., preparation of a clean GaAs surface, photo-oxidation for a resist film formation, direct patterning of the oxide resist by EB-induced Cl2 etching, Cl2 gas etching of GaAs surface for pattern transfer, and thermal treatment in an arsenic ambient for resist removal and surface cleaning. The GaAs wafer is never exposed to air throughout all of the above processes to avoid an unintentional surface contamination. The minimum electron dose required for patterning of the GaAs oxide resist is about 5×1016 cm−2. An overgrown layer on the patterned GaAs surface shows a good surface morphology, which strongly indicates that this technology makes it possible to repeat crystal growth and surface patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344945
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  • 5
    Electronic Resource
    Electronic Resource
    Novel in situ pattern etching of GaAs by electron-beam-stimulated oxidation and subsequent Cl2 gas etching (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2725-2727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for in situ pattern etching of GaAs was demonstrated by using an electron-beam (EB)-stimulated-oxidized surface layer as a mask for subsequent Cl2 gas etching. This process is based on the experimental results that GaAs oxide prepared by EB irradiation under an oxygen atmosphere is resistive to Cl2 gas etching, whereas GaAs oxide without an EB can be easily etched. The resistance of the oxide mask against Cl2 gas etching varies depending on the EB dose with which the oxide of GaAs is formed. A fine pattern, such as a 1 μm linewidth in a 5-μm pitch line-and-space, is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348626
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  • 6
    Electronic Resource
    Electronic Resource
    Particle- and photoinduced conductivity in type-IIa diamonds (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1086-1095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics associated with radiation detection were measured on single-crystal natural type-IIa diamond using two techniques: charged particle-induced conductivity and time-resolved transient photoinduced conductivity. The two techniques complement each other: The charged particle-induced conductivity technique measures the product of the carrier mobility μ and lifetime τ throughout the bulk of the material while the transient photoconductivity technique measures the carrier mobility and lifetime independently at the first few micrometers of the material surface. For each technique, the μτ product was determined by integration of the respective signals. The collection distance that a free carrier drifts in an electric field was extracted by each technique. As a result, a direct comparison of bulk and surface electrical properties was performed. The data from these two techniques are in agreement, indicating no difference in the electrical properties between the bulk and the surface of the material. The collection distance continues to increase with field up to 25 kV/cm without saturation. Using the transient photoconductivity technique the carrier mobility was measured separately and compared with a simple electron-phonon scattering model. The general characteristics of carrier mobility, lifetime, and collection distance at low electric field appear to be adequately described by the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354957
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  • 7
    Electronic Resource
    Electronic Resource
    Reaction of oxygen with in situ H2S-treated GaAs (001) surfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 805-810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of oxygen with H2S-treated GaAs (001) surfaces was studied using Auger electron spectroscopy and reflection high-energy electron diffraction. GaAs surfaces in situ treated with H2S gas were exposed to pure oxygen gas with and without simultaneous light illumination of a halogen lamp. It was shown that the oxygen uptake on a H2S-treated surface is much less than that on an untreated bare GaAs surface. Surfaces exposed to oxygen were heated in an ultrahigh-vacuum environment in order to study the desorption of the reacted oxygen. The oxygen Auger signal was found to easily disappear when the surface was heated to 520 °C, leaving sulfur atoms on the surface. The oxide formed on a bare GaAs surface with light illumination was found to be relatively thick; it did not desorb completely until it was heated to about 550 °C. These results indicate that oxide on a H2S-treated surface is formed only on the top surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349638
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  • 8
    Electronic Resource
    Electronic Resource
    A multichamber system for in situ lithography and epitaxial growth of GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1828-1835 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel multichamber system for beam-assisted etching, in situ lithography, and molecular-beam epitaxy (MBE) has been constructed and proved to be usable with full functions. This system comprises seven ultrahigh-vacuum (UHV) chambers connected by UHV tunnels. A specially designed gun column, which can be used for a focused-ion-beam (FIB) gun or an electron-beam gun, and an introduction system of Cl2 gas have been installed in a UHV chamber for beam-assisted Cl2 gas etching. In order to evaluate the induced damage by ion irradiation, the FIB gun with a novel retarding system was installed. An in situ Auger electron spectroscopy apparatus and an in situ photoluminescence unit were attached to the analysis chamber in order to evaluate the surface composition and the induced damage, respectively. Examples of GaAs/AlGaAs heterostructure grown on in situ patterned substrates showed good surface morphology, indicating the usefulness of this technique for microfabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142429
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  • 9
    Electronic Resource
    Electronic Resource
    Experimental verification of guided modes in 60°-bent defect waveguides in AlGaAs-based air-bridge-type two-dimensional photonic crystal slabs (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3477-3479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sixty-degree-bent defect waveguides (DWGs) in an AlGaAs-based air-bridge-type two-dimensional photonic crystal (2D PC) slab were fabricated, and the resulting optical transmission spectra and the plan-view image of the optical beam propagating along the bent DWG were measured in the wavelength range between 850 and 1100 nm. Using the two output ports of the stripe waveguides, one aligned to and another offset from the output edge of the bent DWG, the guided mode specific to the DWG and the slab mode in the defect-free PC slab were experimentally observed with the same sample. These results were verified using the calculated band structure and transmission spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436554
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  • 10
    Electronic Resource
    Electronic Resource
    Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 98-100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This is the demonstration of "in-situ masking'' concept. In situ patterning of GaAs is carried out by using a photo-oxidized surface layer as a mask for subsequent Cl2 etching. Clean GaAs surface provided by molecular beam epitaxy is exposed to pure oxygen and is simultaneously irradiated with an Ar+ ion laser of the 514.5 nm line for photo-oxidation of the surface. Subsequent Cl2 gas etching of the photo-oxidized sample reveals that the GaAs oxide fills the role of an etching mask. The resistance of the oxide mask against Cl2 etching varies depending on the laser fluence with which the oxide of GaAs is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102616
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