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  • 1
    Electronic Resource
    Electronic Resource
    Propagation and reflection properties of magnetoelastic wave in FeSiB amorphous wire : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4653-4655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Propagation and reflection properties of magnetoelastic waves in Fe77.5Si7.5B15 amorphous wires are studied. The attenuation constant increases with increasing the driving frequency of the wave. As the attenuation constant of the wave driving at 500 kHz is quite small (0.18 m−1), the wave is expected to be observed after the propagation of 20 or 30 m. As for the reflection, the magnetoelastic wave is reflected with the efficiency as much as 0.9 at the driving frequency below 2 MHz using a clamp as reflector. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361694
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of magnetization dynamics and magnetoimpedance in FeCoSiB and FeSiB amorphous wires : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6542-6544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to observe magnetization dynamics in amorphous wires is described. When an ac current passes through the amorphous wire, voltages induced between both ends of the wire and in a pickup coil wound around the wire are observed. These voltages indicate circumferential and axial components of magnetization changes in the wire, respectively. Observations in a Co-rich wire having slightly negative magnetostriction and an Fe-rich wire having positive magnetostriction under various bias fields showed quite different wave forms which indicate their domain structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361940
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5125-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of oxygen on H-terminated Si(100) surfaces has been investigated by high-resolution electron energy loss spectroscopy (HREELS). Adsorptions of atomic oxygen occur even at room temperature. Si-OH stretching and Si-O-Si (B1) vibrational modes are observed in HREELS spectra, which indicates that atomic oxygen is adsorbed on sites of Si—H bonds and Si—Si back bonds. On the other hand, H-terminated surfaces are very stable for molecular oxygen, which cannot adsorb until 380 °C on the surface. A dissociative adsorption of molecular oxygen is observed above 380 °C and the activation energy of the adsorption is 2.0 eV at 380–450 °C. This value coincides with the desorption energy of hydrogen atoms from a Si(100) surface with the monohydride phase. These results indicate that the dangling bonds are essential to the adsorption of molecular oxygen on Si(100) surfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359323
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic Level Characterization of the Iodine-Modified Au(111) Electrode Surface in Perchloric Acid Solution by in-Situ STM and ex-Situ LEED (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 4568-4576 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00011a062
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  • 5
    Electronic Resource
    Electronic Resource
    Physical and electrical properties of Ge-implanted SiO2 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3524-3528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor structures with a Ge nanocrystal embedded in SiO2 films were fabricated by Ge+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO2 films. The Ge size and its density were estimated to 3–5 nm and 1×1012/cm2, respectively. Photoluminescence spectra showed a strong blue–violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance–voltage characteristics exhibit the flatband voltage shifts of 1.02 V after the electron injection into the SiO2/Ge/SiO2 potential well. An anomalous leakage current was clearly observed in the current–voltage characteristics. The precise simulation of quantum electron transport in the SiO2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO2/Ge/SiO2 double-well band structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399024
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  • 6
    Electronic Resource
    Electronic Resource
    Construction and beam experiment of a compact storage ring at MELCO : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1968-1970 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact storage ring has been developed for industrial research such as x-ray lithography and material analysis. This machine is of a racetrack type with two superconducting bending magnets and only two normal conducting quadrupole magnets. The circumference is as short as 9.2 m. One quadrupole magnet per cell contributes to making the smaller machine. The injector is a synchrotron, and a full energy injection of 600 MeV is performed. The bending magnets excite a field of 3.5 T, and are operated in a persistent current mode. A decrease in a coil current is ΔI/I〈3×10−3/year. The helium consumption is as low as 2 l/h for two magnets. An iron shield of the magnet decreases a leakage flux to a terrestrial level at a point 3 m from the magnet. A beam current of 380 mA has been stored with no beam instability in spite of there being no correction of the chromaticities. Beam emittances were obtained from measured beam sizes and were in good agreement with calculated values. The coupling coefficient εy/εx is calculated as around 0.04. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145772
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of electronic states on precipitation of metallic As clusters in LT-GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6016-6020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of electronic states of the semiconductor matrix on the precipitation of metallic As clusters in GaAs epilayers grown by molecular beam epitaxy at low temperatures were studied. From x-ray diffraction and Hall effect measurements, the presence of free carriers was found to occur in a certain time after the start of the coarsening stage of the precipitation. Transmission electron microscope observations indicate that redistributions of As clusters between the doped and undoped regions starts at the same time with the appearance of free carriers. Redistributions of As clusters occurs in pn junction structures in such a way that depletion zones of the pn junctions become free from As clusters, leading to close correlation of widths of precipitate free zones with those of the depletion zones of the pn junctions for various dopant concentrations. These observations are explained with a tendency of As metal clusters of reducing free carriers in the surrounding semiconductor matrix and hence keeping it as an intrinsic semiconductor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319324
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  • 8
    Electronic Resource
    Electronic Resource
    Ionization by electron impact in an indirectly heated Penning source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 151-154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ion-production mechanism in an indirectly heated Penning source has been studied at NIRS. Taking the number of primary electron passages between two cathodes into account, we calculated the effective electron current density, Ji ; it is the order of kA/cm2 for Ar, where the index "i'' is the charge state. In a pulsed arc condition of 2.6 A and 1300 V with a neutral atom density of 4×1013/cm3(cw), the calculated ionization times for Ar5+→Ar6+ and Ar6+→Ar7+ are 18 and 28 μs if their production process is step-by-step. These values agree well with the experimental value of 20 μs. Ji is proportional to the arc voltage and inversely proportional to the neutral-atom density N. The yield of multiply charged ions is in proportion to 1/Ni−2. This expression agrees well with the experimental results, which suggest that multiply charged ions are produced from Ar2+ through step-by-step ionization by primary electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347736
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  • 9
    Electronic Resource
    Electronic Resource
    Extremely low non-alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C-doped (1021 cm−3) p++GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8227-8232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistance ρc of non-alloyed ohmic metals (Mo/Au and WSix) to p-type GaAs is evaluated by transmission line method (TLM) patterns for various doping concentrations from 8×1018 to 1021 cm−3. The obtained specific contact resistance ρc, less than 10−8 Ω cm2, to metalorganic molecular beam epitaxy grown C-doped ( 1021 cm−3) GaAs is the lowest reported value. From the application point of view for the emitter electrodes of PNp type (two-dimensional electron gas base) heterojunction bipolar transistors, the specific contact resistance of a refractory metal, or the sputter-deposited WSix (x=0.45), is also studied. By reducing the growth temperature of molecular beam epitaxy from 600 to 450 °C and enhancing the As4/Ga flux ratio to 15, a nondiffusive heavily Be doped (1020 cm−3) GaAs is obtained. The specific contact resistance of the WSix to this sample is less than 10−6 Ω cm2. The obtained specific contact resistance can be well explained by a simple modeling based on the tunneling transport of light holes. Secondary ion mass spectroscopy analysis of the depth profile under heat acceleration shows a small diffusion of dopants for Be doped (1020 cm−3) GaAs and C-doped (1021 cm−3) GaAs. In addition, the specific contact resistance ρcISO of the isoheterojunction (p+GaAs/p+AlxGa1−xAs) is also evaluated by TLM patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347427
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  • 10
    Electronic Resource
    Electronic Resource
    Application of low-temperature ions in the nonequilibrium state plasma of a Penning source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7933-7935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the high-output properties during the early 100–200 μs of a pulsed Penning source. The peak intensity, I, is higher than that of a dc source by a factor of more than 10. This phenomenon is due to the long confinement time of ions, τ, at the rising of the plasma, since within such a short time the ion temperature, T, does not reach thermal equilibrium and is still low. These characteristics are expressed as I∝τ∝T−1/2. The ratio of T−1/2 before and after equilibrium has a maximum of 1/18.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347487
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