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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of stacked high-k dielectrics on silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3824-3826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of ZrO2/ZrSixOy and ZrO2/ZrSixOy/SiNx thin films on silicon was examined by synchrotron radiation ultraviolet photoemission spectroscopy. The ZrO2/ZrSixOy layer deposited by atomic-layer-controlled deposition is stoichiometric, uniform, amorphous, and has an equivalent oxide thickness of ∼1 nm and a dielectric constant of ∼18 with low leakage current. These ZrO2/ZrSixOy samples are thermally stable in vacuum up to 880 °C at which the film decomposed to form ZrSi2, the most thermodynamically stable metal silicide at a per zirconium atom basis, and the desorption of SiO(g) and ZrO(g) accounted for the greatly reduced oxygen and zirconium photoemission intensities. The thermal stability of ZrO2/ZrSixOy is improved to 950 °C when deposited on a 0.5–0.7 nm SiNx film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419030
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric property and conduction mechanism of ultrathin zirconium oxide films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3666-3668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric, uniform, amorphous ZrO2 films with an equivalent oxide thickness of ∼1.5 nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential applications in metal–oxide–semiconductor (MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole–Frenkel emission at high electric fields. The MOS devices showed low leakage current, small hysteresis (〈50 mV), and low interface state density (∼2×1011 cm−2 eV−1). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of α-ZrO2 and an amorphous interfacial ZrSixOy layer which has a corresponding dielectric constant of 11. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418265
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  • 3
    Electronic Resource
    Electronic Resource
    In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3124-3126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φB〉0.73 eV), and large conduction-band discontinuity (ΔEc〉0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126544
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  • 4
    Electronic Resource
    Electronic Resource
    High efficiency guided-wave magnetooptic Bragg cell modulator using nonuniform bias magnetic field (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3715-3717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for large enhancement of the diffraction efficiency of a guided-wave magnetooptic (MO) Bragg cell modulator using a nonuniform bias magnetic field in bismuth-doped yttrium iron garnet-gadolinium gallium garnet waveguide is reported. Since the velocity of propagation of the magnetostatic forward volume wave (MSFVW) varies with the bias magnetic field, a bias magnetic field of proper spatial distribution will modify its wave front and, thus, create a lensing effect upon the MSFVW. This lensing effect in turn reduces the angular beam spread of the MSFVW, and results in a higher MO Bragg diffraction efficiency. The experimental data obtained for the cases with uniform and nonuniform bias magnetic fields at the carrier center frequency range of 2.0–3.5 GHz have demonstrated a diffraction efficiency enhancement by two to six times. A diffraction efficiency as high as 70% has also been accomplished. Furthermore, the measured frequency responses indicate that the nonuniform bias magnetic field has had only a mild effect on the bandwidth of the MO Bragg cell modulator. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120491
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  • 5
    Electronic Resource
    Electronic Resource
    High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1616-1618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm2/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the δ-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124772
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  • 6
    Electronic Resource
    Electronic Resource
    Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3551-3553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An In0.5(Al0.66Ga0.34)0.5P/GaAs heterostructure field-effect transistor has been fabricated by metal-organic chemical vapor deposition. A turn-on voltage as high as 3.2 V along with an extremely low gate reverse leakage current of 69 μA/mm at VGD=−40 V are achieved. In addition, it is found that the device can be operated with gate voltage up to 1.5 V without significant drain current compression. These characteristics are attributed to the use of high Schottky barrier height, high band gap of In0.5(Al0.66Ga0.34)0.5P Schottky layer, and to the large conduction-band discontinuity at the In0.5(Al0.66Ga0.34)0.5P/GaAs heterojunction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125385
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of Suspension-Derived, Porous Ion-Conducting Ceramic Membranes (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Porous, oxygen-ion-conducting ceramic membranes can have applications as supports for fuel cells, sensors, and thin membrane films, or as filters for membrane filtration. This paper reports on the preparation of unsupported and supported yttria-stabilized zirconia (YSZ) and yttria-doped bismuth oxide (BY) membranes with submicrometer pore sizes. Fluorite-structured BY powder that has been synthesized using the citrate method and commercial YSZ powder have been used to prepare stable aqueous suspensions. Unsupported and supported YSZ and BY membranes have been prepared from the stable suspensions of YSZ and BY. The supported BY membranes are crack free but contain small defects. Defect-free YSZ membranes that are supported on porous alumina have been prepared under controlled conditions. The average pore size is 100 nm, with a porosity of 57%, for an unsupported YSZ membrane (measured by mercury porosimetry), and 114 nm for a supported membrane (as estimated via helium permeation). The ionic conductivity of the YSZ membranes is 0.00044–0.01 S/cm in the temperature range of 600°–900°C, which is lower than that of dense YSZ disks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb02135.x
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  • 8
    Electronic Resource
    Electronic Resource
    Impact of supplement with Lactobacillus- and Bifidobacterium-containing yogurt on triple therapy for Helicobacter pylori eradication (2002)
    Oxford, UK : Blackwell Science Ltd
    Alimentary pharmacology & therapeutics 16 (2002), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aim : To test whether supplements of Lactobacillus- and Bifidobacterium-containing yogurt (AB-Yogurt) affect the success of Helicobacter pylori eradication.Methods : One hundred and sixty H. pylori-infected patients were randomized into a triple-plus-yogurt group or a triple-only group, receiving 1 week of triple therapy with and without supplements of AB-Yogurt, respectively. In the triple-plus-yogurt group, AB-Yogurt was continued for 4 weeks after triple therapy. Eight weeks later, patients were assessed for the success of H. pylori eradication. The stool samples of 22 randomly selected patients, 11 from each group, were provided on enrolment, at the first week and at the fifth week for evaluation of the percentage of Bifidobacterium in anaerobes.Results : By intention-to-treat analysis, the triple-plus-yogurt group had a higher H. pylori eradication rate than the triple-only group (91% vs. 78%, P 〈 0.05). The per protocol H. pylori eradication rates were similar for both groups (93.5% vs. 89%, P = N.S.). Only patients supplemented with AB-Yogurt showed restoration of the percentage of Bifidobacterium in the anaerobes of stools at the fifth week to the level in the stools on enrolment.Conclusions : Supplement with AB-Yogurt can improve the intention-to-treat eradication rates of H. pylori, and can restore the depletion of Bifidobacterium in stools after triple therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2036.2002.01335.x
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of dexamethasone upon patient-controlled analgesia-related nausea and vomiting (2002)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 57 (2002), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Ninety female patients were enrolled in this randomised, double-blind, placebo-controlled study to compare the anti-emetic effect of intravenous dexamethasone 8 mg with saline control in preventing patient-controlled analgesia-related nausea and vomiting following major orthopaedic surgery. The prophylactic administration of dexamethasone 8 mg significantly reduced the overall incidence of patient-controlled analgesia-related nausea and vomiting (p 〈 0.001) and the need for rescue anti-emetics (p 〈 0.01). Furthermore, patients who received dexamethasone showed a higher incidence of complete responses (no vomiting or need for rescue anti-emetic for a 24-h postoperative period) than those who received saline (p 〈 0.05). We conclude that dexamethasone 8 mg may be valuable for preventing patient-controlled analgesia-related nausea and vomiting in women undergoing major orthopaedic surgery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2002.02572_5.x
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  • 10
    Electronic Resource
    Electronic Resource
    Sulfur Dioxide Sorption Properties and Thermal Stability of Hydrophobic Zeolites (1995)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 34 (1995), S. 4063-4070 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00038a048
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