Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Nanometer scale lithography at high scanning speeds with the atomic force microscope using spin on glass (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2415-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified a resist material that is suitable for high-speed, nanometer-scale scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is siloxene, commonly known as spin on glass (SOG). The SOG film is deposited on a silicon sample and exposed with a voltage applied between the AFM tip (negative) and the silicon substrate (positive). Voltages of 70 V and currents of 1 nA are typical. It is a positive resist where the etch selectivity between the exposed and unexposed areas is greater than 20. We have recorded line widths as narrow as 40 nm. The writing speed is greater than 1 mm/s, which we believe to be an important attribute in future systems for SPL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114565
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The Compounds Contributing to the Greenness of Green Tea (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 69 (2004), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Color is one of the determinant sensory qualities for green tea. As cold tea beverages in clear bottles are getting more popular, the traditional evaluation methods are gradually being altered to attach more importance to the tea infusion color. For quality control, experiments were carried out on 10 green tea samples to investigate the compounds influencing the colors of dry tea leaves and infusions. By calculating the coefficients of determination between the greenness (expressed in tristimulus data) and chemical composition, chlorophylls proved to be the influential compounds for the color of dry tea leaves; water-insoluble chlorophylls were also released from the fragile tea leaves during infusion and increased both the greenness and turbidity of tea infusions. Among the flavonoids (catechins and flavonols) detected in green tea infusions, quercetin was shown to be the most important phenolic compound contributing to the greenness of tea infusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2004.tb09894.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells
    Amsterdam : Elsevier
    Solid State Communications 85 (1993), S. 111-114 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(93)90357-S
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Complementation of a yeast top2 ts mutation by a cDNA encoding rat DNA topoisomerase IIα (1996)
    Springer
    Molecular genetics and genomics 253 (1996), S. 81-88 
    Details
    ISSN: 1617-4623
    Keywords: Key words Rat ; DNA topoisomerase IIα ; Saccharomyces cerevisiae ; top2ts ; Complementation ; Leucine zipper
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A series of yeast expression plasmids which comprise segments of the cDNA sequences encoding rat topo IIα have been constructed. The transcription of these constructs is under the control of the yeast GAL1 promoter. Galactose-dependent expression of the cloned rat topo IIα cDNA complemented a yeast top2 ts mutation, as well as a deletion mutation at the yeast TOP2 locus. Truncation of 12 N-terminal amino acids and/or 158 C-terminal amino acids of rat topo IIα had no effect on its ability functionally to substitute for top2 ts . Moreover, a cDNA construct with mutated putative leucine zipper domain (amino acids 993–1013) retained the complementation activity. These observations suggest that transformants capable of conditional topo IIα expression can be exploited as a useful model system for studies on the structure-function relationships of wild-type and mutated topo IIα, as well as the interplay of potential antitumor drugs with the enzyme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004380050299
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of CdSe quantum dots (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8041-8045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties of CdSe quantum dots are investigated using self-saturation and degenerate four-wave mixing techniques. The saturation of the room temperature absorption coefficient, for a wavelength in the vicinity of the first exciton peak, is measured. The measured data can be predicted from a description of the quantum dot as a two level, homogeneously broadened, saturating system. The variation of the four-wave mixing reflectivity with intensity and with wavelength is reported. All four-wave mixing data are also consistent with the homogeneously-broadened two-level model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353919
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 279-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated a band gap shrinkage in both lattice-matched and compressive strained GaInAs/GaInAsP/InP multi-quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20–25 meV at sheet carrier densities of above 1012 cm−2, and shows n1/1.3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352129
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 237-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structures of GaAs film on (001) Si substrate tilted ∼3° towards the [110] direction were investigated by the high-resolution transmission electron microscopy. GaAs films were grown by the molecular beam epitaxy (MBE) on the Si (001) substrate by a modified two-step process, in which amorphous GaAs buffer layers were grown first. High-resolution electron micrographs show that stacking faults (and/or microtwins) are preferentially formed on the tilted step-rich surface, whereas misfit dislocations are preferentially formed on the flat surface. However, the difference in the defect density on the two cross sections is small. Between the observed 90° edge and 60° misfit dislocations the density of the latter is higher irrespective of the substrate tilt. This occurrence is explained by the difference in distribution of initial nucleating islands between the present and the conventional two-step MBE techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347756
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Interimpurity transitions in heavily doped semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5916-5918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first observation of theoretical predictions that, even in the case of a single acceptor level, the luminescence spectrum can have more than one peak depending on the temperature and pumping rate. Two peaks are observed: One peak (peak A) is related to the tail-impurity transition, and the other (peak B) to the band-impurity transition. The intensity of peak A is quenched at low and high temperatures, reaching its maximum value at about 30 K. At a high current and high temperature, peak B dominates and its energy increases with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346918
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Solid-phase crystallization of Si1−xGex alloy layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2091-2095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase crystallization of Si1−xGex (x=0–1.0) alloy layers deposited on a Si (100) substrate was investigated by ellipsometric spectroscopy. From a dispersion analysis of dielectric spectra, we deduced a crystallinity corresponding to the degree of average lattice alignment of the composed polycrystalline Si1−xGex layers and investigated the dynamical change in crystallinity during crystallization. We found that the crystallinity and crystallization temperature (TC) rapidly decreased with increasing Ge concentration (x). When x was small (=0–0.3), the highest crystallinity was ∼0.8 of that for single crystals while the lowest one was considerably below 0.6 when x〉0.8. Moreover, the crystallinity decreased with increasing temperature above TC. We investigated the nucleation rate during crystallization and found that the decrease in crystallinity at both large Ge concentration and high temperature can be explained by a trade-off between the nucleation and crystallization rates; nucleation was dominant under these conditions. An overview of the crystallinity of solid-phase crystallized Si1−xGex alloy layers is provided. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344215
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Optical gain measurements based on fundamental properties and comparison with many-body theory (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2945-2952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371153
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...