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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed PFOODR Spectroscopy of Triplet Rydberg States of ^7Li"2
    Amsterdam : Elsevier
    Journal of Molecular Spectroscopy 161 (1993), S. 7-16 
    Details
    ISSN: 0022-2852
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/jmsp.1993.1212
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  • 2
    Electronic Resource
    Electronic Resource
    Cytogenetic monitoring of petrochemical workers
    Amsterdam : Elsevier
    Mutation Research Letters 175 (1986), S. 237-242 
    Details
    ISSN: 0165-7992
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0165-7992(86)90060-6
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of structure and morphology on resistive loss at 10 GHz of the large-area laser-deposited YBa2Cu3O7 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1165-1170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three large-area YBa2Cu3O7(YBCO) superconducting thin films have been laser-deposited under almost identical conditions. However, the microwave surface resistance Rs of the films deviated greatly, they are 280 μΩ, 3.78 mΩ, and 97 mΩ, respectively. It was found that the structure and morphology of the films greatly influence the resistive losses at 10 GHz and 77 K of the YBCO thin films. Different loss mechanisms were discussed. For high Rs, the large angle grain boundaries were the dominate defect in the thin films and increased the Rs of the film markedly. For low Rs, it was mainly due to the misaligned "123'' grains in the thin films and the intrinsic loss. For Rs up to the mΩ range, besides the misaligned 123 grains, domain boundaries and nonsuperconducting outgrowths of different sizes appeared and this caused the rise of Rs value. All these results were given experimentally and discussed theoretically. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358981
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of single domain ZnSe on Ge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2026-2028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnSe epilayers have been successfully grown on a Ge (311) substrate by molecular beam epitaxy. Reflection high energy electron diffraction indicated antiphase domain free growth. The x-ray diffraction rocking curve demonstrated a full width at half maximum as narrow as 198 arcsec, which is the narrowest linewidth reported to date for a ZnSe/Ge heteroepitaxy. Our results indicate that ZnSe/Ge heterostructures are promising for optoelectronic device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356303
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  • 5
    Electronic Resource
    Electronic Resource
    Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358938
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  • 6
    Electronic Resource
    Electronic Resource
    Relaxation of magnetization in Cd1−xMnxTe diluted magnetic semiconductors under illumination : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5734-5736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation of thermoremanent magnetization (TRM) of Cd1−xMnxTe diluted magnetic semiconductors (DMS) in the spin-glass state have been studied under light illumination. The relaxation of TRM can be described well by a power law decay, M(t)=M(t0)t−α (t(approximately-greater-than)t0, t0∼2 s). The variations of the decay parameter α with the illumination light intensity has been measured and a relation which indicates that α is proportional to the photogenerated carrier concentration n has been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355598
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  • 7
    Electronic Resource
    Electronic Resource
    Field-ion scanning tunneling microscopy study of the atomic structure of 6H–SiC(0001) surfaces cleaned by in situ Si molecular beam etching (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2524-2526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field ion-scanning tunneling microscopy has been used to study 6H–SiC(0001) surfaces with Si adlayers on the Si-terminated surface, formed by in situ Si molecular beam etching at 950 °C. The as-cleaned surface showed a ((square root of 3)×(square root of 3)) reconstruction. The (2×3), (2(square root of 3)×6(square root of)6), and (3×3) phases were formed by evaporating Si on this clean 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface. A Si(111) film 6 monolayers thick was also epitaxially grown on the 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface at 800 °C, and the surface exhibited the Si(111)–(7×7) reconstruction. A surface vacancy model for the ((square root of 3)×(square root of 3)) reconstruction is proposed, and a possible application of utilizing the various surface reconstructions to control the growth of different polytypes of SiC on the 6H–SiC substrate is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363037
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of surface displacements in 1-3 and 1-1-3 piezocomposites (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a piezoelectric ceramic–polymer composite, the piezoceramic and the nonpiezoelectric polymer will have different deformations when subjected to an external electrical or mechanical stimulus. This local, nonuniform deformation eventually determines the overall electromechanical behavior of the composite. In the current investigation, static surface displacements of piezocomposites with 1-3 and 1-1-3 connectivity were measured using a scanning heterodyne laser interferometer. The influence of a thin interlayer surrounding the piezoceramic rods on the resulting displacement profiles was investigated and correlated with rod/polymer adhesion. The elastic stiffness of the interlayer as well as the interfacial adhesion had a significant effect on the rod displacement. Rods coated with a very compliant interlayer had a much larger displacement than untreated rods, while rods treated with a silane coupling agent to enhance adhesion had a much lower displacement. Experimental displacement profiles were found to be in good agreement with theoretical predictions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360958
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  • 9
    Electronic Resource
    Electronic Resource
    Improving hydrostatic performance of 1-3 piezocomposites (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4595-4603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Type 1-3 piezocomposites consist of aligned piezoelectric rods embedded in a passive polymer matrix and have better hydrostatic behavior than single-phase piezoelectric materials. The improved hydrostatic performance of 1-3 piezocomposites comes from two major effects: the axial stress amplification and the lateral stress reduction in the piezoelectric rods. An improved micromechanical model has been developed to predict the hydrostatic response of 1-3 piezocomposites and to examine the interaction between the piezoelectric rods and the polymer matrix. Effective hydrostatic piezoelectric constants for the composite are predicted and compared to those calculated using a generalized plane strain model. The influence of matrix stiffness, interlayer stiffness, rod aspect ratio, and rod volume fraction on the load transfer and the effective hydrostatic piezoelectric coefficient was investigated. The results obtained provide quantitative information on how various parameters affect the hydrostatic response of the composites. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359424
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen adsorption on GaAs (001) reconstructions (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 10498-10508 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hydrogen adsorption on the c(4×4), (2×4), (2×6), and (4×2) reconstructions of GaAs (001) have been characterized by internal-reflection infrared spectroscopy. The infrared spectra contain up to 15 bands due to the stretching vibrations of arsenic hydrides (2150–1950 cm−1), terminal gallium hydrides (1950–1800 cm−1), and bridging gallium hydrides (1800–950 cm−1). These features arise from hydrogen adsorption on arsenic and gallium dimers, and second-layer arsenic and gallium atoms. The large number of peaks observed indicates that the surface atoms exist in a variety of different chemical environments.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478980
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