ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Oxide deposition followed by high-temperature annealing in N2O has been investigated toimprove the quality of 4H-SiC MOS structures. Annealing of deposited oxides in N2O at 1300oCsignificantly enhances the breakdown strength and decreases the interface state density to 3x1011cm-2eV-1 at EC – 0.2 eV. As a result, high channel mobility of 34 cm2/Vs and 52 cm2/Vs has beenattained for inversion-type MOSFETs fabricated on 4H-SiC(0001)Si and (000-1)C faces, respectively.The channel mobility shows a maximum when the increase of oxide thickness during N2O annealingis approximately 5 nm. A lateral RESURF MOSFET with gate oxides formed by the proposed processhas blocked 1450 V and showed a low on-resistance of 75 m[removed info]cm2, which is one of the bestperformances among lateral SiC MOSFETs reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.987.pdf
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