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  • Articles: DFG German National Licenses  (26)
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  • Articles: DFG German National Licenses  (26)
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  • 1
    Electronic Resource
    Electronic Resource
    A photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6349-6352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of reactive-ion-etching (RIE) on the near-surface crystal quality of Czochralski silicon has been studied by photoluminescence spectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydrogen to the plasma as well as the time of treatment are studied and discussed in terms of defect formation and etch rate. Photoluminescence spectra of samples recorded after a magnetically enhanced reactive-ion-etching process are also presented. The introduction of defects depending on the self-bias voltage and the etch rate are investigated for different magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355158
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8017-8026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge concentration using in situ ellipsometry while the material is slowly removed from a silicon substrate using reactive-ion etching (RIE). Homogeneous, strained epitaxial SiGe films on silicon substrates were used. The Ge concentration was obtained by Rutherford backscattering. If an unknown SiGe structure is etched with RIE, in situ ellipsometry yields combinations of the ellipsometric angles Ψ and Δ with time. Starting at the Si substrate, these points are, on a point-to-point basis, converted into combinations of complex refractive index and depth in a numerical procedure. For this inversion of the ellipsometry equations, the known relation between the real and the imaginary part of the refractive index of SiGe is used. Finally the refractive indices are converted into Ge concentrations. Thus the depth profile of the Ge concentration in an unknown epitaxial SiGe structure can be inferred from an in situ ellipsometric measurement during RIE of the unknown structure. The obtained resolutions in depth and Ge concentration are 0.3 nm and 0.3%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353916
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348517
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of plasma exposed silicon surfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5597-5603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of photoluminescence (PL) spectra obtained with silicon exposed to various plasmas as a function of plasma etch treatment conditions is reported. Phosphorus- or boron-doped covering a large range of doping concentrations, Czochralski or float-zone-grown silicon crystals were investigated. The effect of various etching gases on the luminescence spectra as well as the effects of subsequent annealings are reported. Two types of recombination process are observed: (i) The first gives rise of sharp luminescence lines, such as the W (1018 meV), X (1040 meV), T (935 meV), I (965 meV), G (967 meV), C (790 meV), and P (767 meV) lines, which are known to originate from defects produced by high-energy irradiation and then manifest damage of the crystalline material. Other sharp PL lines at 1015, 1008, and 997 meV were introduced upon annealing at 400 °C. (ii) The second recombination process induces broad lines or bands in the photoluminescence spectra. The formation and nature of the defects giving rise to both recombination processes are discussed in terms of the plasma conditions and starting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350172
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of defects induced in silicon by SF6/O2 reactive-ion etching (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3348-3352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) studies of SF6/O2 plasma-induced defect formation in n-type silicon samples are reported. Ion bombardment of the silicon surface during the SF6 reactive-ion etching (RIE) is shown to introduce defects giving rise to a broad PL band in the 0.70–1.00 eV spectral range and to the carbon-related C and G lines. The role of oxygen during SF6/O2 RIE on the photoluminescence observed is analyzed. It is argued that oxygen contamination enhances the formation of PL centers via the creation of extended defects, such as oxygen precipitates. A lattice contraction nearby these extended defects is suggested to be responsible for the observed splitting of the C and G lines as well as the shift of the phosphorous bound exciton line detected after SF6/O2 RIE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360711
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Interactive effects in the reactive ion etching of SiGe alloys (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine-, chlorine-, and bromine-based low-pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine-based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is (approximately-equal-to)2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104942
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 590-592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x-ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma-induced structural disorder in the silicon surface was only observed in the RIE-etched sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103607
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2698-2700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide to silicon etch selectivity in reactive ion etching (RIE) employing fluorocarbon gases is due to the formation of a fluorocarbon film on the substrate. This implies that etch selectivity is not achieved instantly but that the substrate will exhibit a transient etch rate and hence material loss during the film formation period. The amount of silicon lost during overetching for CF4/H2 RIE was determined by Rutherford backscattering spectrometry employing a buried marker. For standard etching conditions, about 7 nm of silicon is lost within the first minute of overetching as compared to 1.5 nm expected from steady-state etch rate data. The Si etch rate varies strongly as a function of time and decreases by a factor of greater than 10 within the first 30 s of overetching to approach a steady-state value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100673
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen plasma induced defects in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99810
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Selective dry etching of silicon with respect to germanium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ((approximately-equal-to)3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102490
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    Paper (German National Licenses)
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