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  • 1995-1999  (103)
  • 1
    Electronic Resource
    Electronic Resource
    Guided ion beam studies of the reactions of Vn+ (n=2–17) with O2: Bond energies and dissociation pathways (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 9339-9350 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the reactions of Vn+ (n=2–17) with oxygen is studied using a guided ion beam mass spectrometer. In all but the smallest clusters, the primary reaction process at low energies is the formation of a vanadium cluster dioxide ion which then loses one or two vanadium atoms or a vanadium oxide diatom (VO). Vanadium atom loss is the preferred reaction pathway for large clusters (n≥5), whereas loss of VO is more favorable for the smallest reactant clusters (n≤4). As the collision energy is increased, these primary products dissociate further by loss of additional vanadium atoms. Bond dissociation energies of the vanadium cluster oxides are determined by analysis of the kinetic energy dependence of several different products. The effect of oxygen atoms on the stabilities of vanadium cluster ions is discussed and compared with bulk phase thermochemistry. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476386
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  • 2
    Electronic Resource
    Electronic Resource
    Radiative Lifetimes, Electronic Quenching Rate Constants, and Spin-Orbit Relaxation Rate Constants of the PF(A3Π.) and PF(d1Π.) States (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 3173-3183 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100010a031
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1073-1077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the "atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360896
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 5
    Electronic Resource
    Electronic Resource
    Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1904-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self-consistent modeling, provide insights into the internal operating mechanisms of the laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363005
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  • 6
    Electronic Resource
    Electronic Resource
    A new algorithm of quantitative texture analysis adapted to thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7376-7378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new algorithm of quantitative texture analysis, i.e., a modified maximum entropy method, was applied to the texture analysis of polycrystalline thin films. The algorithm program suitable for determining the inverse pole figure of polycrystalline thin films with hexagonal structure was developed and is illustrated with an example of Zn film deposited on Fe substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362700
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of supersaturated solid solutions in the immiscible Ni–Ag system by mechanical alloying (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3935-3945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical alloying process in the immiscible Ni–Ag system with a positive heat of mixing was investigated by x-ray diffraction and differential scanning calorimetry. High energy ball milling of mixed elemental powders, with nominal composition NixAg100−x (x=95, 90, 70, 50, and 30), results in the formation of mixtures of supersaturated, nanocrystalline Ni-rich and Ag-rich solid solutions. The solubilities and final grain sizes of these phases depend on the nominal composition of the powder. The maximum solubilities were determined using Vegard's law to be 4.3 at. % Ni in Ag and 6.6 at. % Ag in Ni for samples milled at room temperature. The effect of milling temperature on mechanical alloying was examined in the range −195 to 250 °C. Lower temperature milling leads to a larger solubility of Ni in the Ag-rich samples, up to 7.1 at. % for the Ni30Ag70 composition. Indications for the existence of a concentrated solid solution (Ni36Ag64-Ni44Ag56) were also found. Milling at higher temperatures leads to lower solubilities. A study of the thermal stability of supersaturated Ag-rich and Ni-rich phases shows that milling at high temperature can be understood in terms of a competition between mechanical mixing and thermal decomposition. At room temperature, nonequilibrium vacancies are responsible for decomposition. The results give new insight into the general characteristics of the mechanical alloying process in thermodynamically unstable systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361820
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  • 8
    Electronic Resource
    Electronic Resource
    Energy relaxation processes of hot quasi-two-dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton–acoustic-phonon interaction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 424-426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function of the well width. For well thickness below approximately 20 A(ring), we find an increase of rising time with decreasing well width. We explain the dependence of the rising time on well width in very thin quantum wells by the slow-down energy relaxation and/or exciton migration processes due to the decrease of the scattering rate of the exciton–acoustic-phonon interaction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360847
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  • 9
    Electronic Resource
    Electronic Resource
    Differential gain in coupled quantum well lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2962-2969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we examine the effect of coupling between the wells on the differential gain. We find, as for the gain peak, the differential gain at the gain peak is not a monotonic function of the barrier thickness. For relatively thick barriers inclusion of coupling reduces the differential gain but as the barrier gets thinner the differential gain can be significantly enhanced or suppressed. We also compare our calculations with those for single quantum well to show how the enhancement in differential gain in the multi quantum well laser, due to reduced state filling and higher modal gain is affected by well coupling. Without losing generality, the model assumes the quantum well region to be electric field free. Numerical examples are presented for a GaAs/Al0.2Ga0.8As double quantum well system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360043
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  • 10
    Electronic Resource
    Electronic Resource
    Spin polarized photoemission studies of the 3s core level in ferromagnetic systems (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6507-6508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin polarized core level photoemision studies are capable of providing local site specific magnetic information. 3s core level photoemission spectra are characterized by a main peak and satellite whose separation reflects the exchange interaction between the core level and the net spin in the valence bands. However, there is currently considerable disagreement as to whether the splitting between these two peaks may be taken as a measure of the local moment. An alternative approach is to examine the intensities of the different peaks in the spectra. Indeed analysis of the multiplet intensities in the final state suggests that it should be possible to obtain a reasonable measure of the local magnetic moment through measurement of the spin dependent intensities in the multiplet structure. In detailed spin polarized photoemission studies of the 3s core level of Fe and Co films grown on Ag(001) and Cu(001) substrates, respectively, we find that this is indeed the case. This suggests that studies of the spin polarization of the 3s core level photoemission may provide an important new technique for the measurement of magnetic moments in thin films. Lineshape fitting reveals new information about the lifetime of the core holes. Previous studies have suggested that a majority spin core hole will be shorter lived than a minority spin core hole because of the higher density of majority spin electrons in the valence bands. However, our studies indicate that the lifetime is more complicated and that it shows a strong dependence on the LS in the final state. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362696
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