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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6274-6276 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature magnetic properties and crystal structures of melt-spun Sm2Co7B3 compound were characterized. The magnetic measurements in the temperature range 77–450 K indicated that a spin reorientation took place at about 150–160 K. A huge anisotropy was observed (Ha=135 kOe at 300 K, 725 kOe at 77 K) for Sm2Co7B3, although the magnetic moment is rather low. The crystal structure of the Sm2Co7B3 compound was analyzed in detail by Rietveld analysis of powder diffraction for the first time, and revealed that B(4h) atoms are not placed in the Sm(2e) layer but in between the Sm(2e) and Co(6i1) layers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6655-6657 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process for making Alnico magnets (grade 5–8) via rapid solidification technology has been developed. The process includes extractive melt spinning of alloy powders, press forming, heat treatment under a magnetic field, and aging. The Alnico 5 magnets made by this process showed superior magnetic properties to those of cast magnet of the corresponding composition. The superior magnetic properties of the sintered magnets with Br=13.2 kG, Hc=680 Oe, and (BH)max=6.02 MGOe are due to the spinodal decomposition which is completely free of γ phase.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6925-6927 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of giant magnetoresistance properties of single (bottom) and dual IrMn-based spin valves through exposure of part of the CoFe pinned layer to O2 is reported. Under optimal conditions, a ΔR/R of 10.4% [Hua=460 Oe, Hf=5.1 Oe, and Hc=4.7 Oe for a free and pinned layer thickness (permalloy equivalent) of 50 Å each] for an ion beam sputtered single spin valve, and a ΔR/R of as high as 20.5% for a magnetron sputtered dual spin valve having a 30 Å thick CoFe free layer are observed, compared to a value of 6.5% and 10.6% for the corresponding spin valve without O2 exposure, respectively. Transmission electron microscopy results reveal the presence of a thin (10 Å) crystalline oxygen-containing layer near the IrMn–CoFe pinned layer interface as a result of O2 exposure. X-ray reflectivity data show smoother interfaces for the spin valves subjected to O2 exposure, consistent with the lower Hf and smaller sheet resistance observed for these samples. The enhanced ΔR/R thus can be attributed to improved growth after O2 exposure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4727-4729 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5≤w≤10 μm) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5369-5371 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4101-4104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz–Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F(approximate)Fbi−δF/2 when δF(very-much-less-than)Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7019-7021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain structures of epitaxial Fe (20 nm)/GaAs(100) circular dot arrays (diameters from 50 to 1 μm) were studied with magnetic force microscopy. A transition from a single domain to a multidomain remanent state was observed upon reducing the dot diameter beneath 10 μm in dot arrays with the separation twice the dot diameter. When the separation is reduced to half the dot diameter, the single domain states were found to "collapse" into stripe-like multidomain states due to local dipole coupling between dots. Micromagnetic simulations further suggest that for ultrathin Fe dots of less than about 2 nm thickness the diameter does not have a significant influence on the domain structures due to a dramatic reduction of the dipole energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3032-3036 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal process in permalloy (Ni80Fe20) wire junction structures has been investigated using magnetoresistance (MR) measurements and scanning Kerr microscopy. A combination of electron beam lithography and a lift-off process has been utilized to fabricate wires consisting of two 200 μm length regions with distinct widths w1 and w2 in the range 1–5 μm. Longitudinal MR measurements and magneto-optic Kerr effect hysteresis loops demonstrate that the magnetization reversal of the complete structure is predominantly determined by the wider region for fields applied parallel to the wire axis. Magnetic force microscopy and micromagnetic calculations show that several domain walls nucleate in the wider part and are trapped in the junction area. This implies that domain nucleation at the junction of the wire initiates magnetization reversal in the narrow half. As a consequence, the switching fields are found to be identical in both halves in this case. These results suggest the possibility of designing structures which can be used to "launch" reverse domains in narrow wires within a controlled field range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6682-6685 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4672-4674 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and magnetic properties of off-stoichiometric 2:17-type compounds Sm2Fe17−xTxM (T=Co, Ti; M=Al, Si; x=0–4) were studied by x-ray powder diffraction, thermomagnetic analysis, and magnetic measurements. All these compounds were of the Th2Zn17 type. The substitution of Co or Ti for Fe, and the addition of Si or Al into the Sm2Fe17 did not alter the rhombohedral structure. The Co replacement increased the Curie temperature Tc due to the strong coupling between Fe and Co. A small substitution of Ti also led to an increase of Tc. However, when x〉3, the exchange coupling became less effective as the separation between the Fe atoms became large, and Tc decreased. The maximum Tc=713 K was found in Sm2Fe17−xCoxSi when x=4. As for the saturation magnetization Ms, Sm2Fe17−xTixAl had its Ms decreased monotonically with increasing Ti, while Ms of other compounds increased first and then decreased with the content of Co or Ti. The maximum Ms=159 emu/g was recorded in Sm2Fe15Co2Al. To make use of these compounds as permanent magnets, Sm2Fe15Co2Si is preferred because it has Tc=641 K and Ms=142 emu/g. The dual substitutions of Fe by using Co or Ti, and by Al or Si to improve Tc and Ms of Sm2Fe17, are more effective than using single substitution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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