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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2258-2263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear optical films were vapor deposited onto Si(100) and indium-tin-oxide-coated glass. These films are guest-host-type polymer and showed electrooptical (EO) properties after poling. The host polymer is Teflon AF 1600 (AF) and the guest is dimethylaminonitrostilbene (DANS). Deposition is done by coevaporation. EO effects were found in films containing 5–25 vol % DANS. The EO coefficient r33, is found to be a function of composition, poling temperature, and cooling rate during poling. The highest EO coefficient obtained is 2.4 pm/V from a film with 10 vol % DANS and poled at a temperature of 130 °C. Very little or no EO effects were found for films with (approximately-greater-than)25 vol % DANS. This is found to be a result of phase separation and subsequent crystallization of DANS. A decrease of EO effect at higher poling temperature is possibly a result of thermal disorder which was "frozen'' during cooling. DANS was also found to react with Teflon AF 1600 at a higher DANS concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 2915-2917 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset and end of drop formation along the surface of turbulent liquid jets in still gases was studied for liquid/gas density ratios greater than 500 where aerodynamic effects are small. Measurements were correlated using a phenomenological turbulent breakup theory based on the interactions between the turbulence energy spectrum and the energy requirements for drop formation. The onset and end of drop formation along the surface generally was associated with turbulent eddies in the internal and large-eddy subranges of the turbulence spectrum, respectively, although breakup of the entire liquid column ends breakup along the surface in some instances, as well. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emitted particles from pulsed-laser ablation (PLA), λ=193 nm and fluence=88–400 mJ/cm2, of frozen glycerol was examined using time-of-flight mass spectrometry. The data are analyzed using supersonic molecular-beam theory and the result is interpreted using a thermal/fluid-dynamic model. Both intact and fragmented glycerol are emitted in the PLA process at all fluences and their concentration ratio is fluence dependent. Fragmentation occurs predominantly at one of the C–C bonds forming CH2–OH (31 amu) and HO–CH2–CH–OH (61 amu). CH3 is produced at the target which requires the protonation of a CH2 fragment. At fluences higher than 250 mJ/cm2, ions are detected. These ions have very high velocity, 〉2000 m/s, and their intensity increases with fluences. PLA is thus not suitable for glycerol transfer under these conditions due to fragmentation. The data show that particle emission proceeds as a simple thermal vaporization process at fluences 〈200 mJ/cm2. Higher fluences will yield a Knudsen layer (KL), which is formed in front of the target surface. For fluences 〉300 mJ/cm2, particles from the KL go through unsteady adiabatic expansion prior to free flight. Models of particle and ion formation and interaction are proposed and discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 508-510 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding structure of an amorphous fluoropolymer, AF 1600, with Al, Ag, Au, and Cu were examined using x-ray photoelectron spectroscopy. 100 A(ring) thick films of AF 1600 were deposited on various metal films. AlF3 was found at the AF 1600/Al interface. F detached from the −CF3 functional group of the AF 1600, diffused into the Al/Al2O3 matrix and formed AlF3. The diffusion depth of F is estimated to be (approximately-greater-than)150 A(ring). An Al film was evaporated onto an AF 1600 film. The Al film was then mechanically peeled off and the remaining polymer surface examined. AlF3 was again found. For the spin-on AF 1600 film on Ag, Au, and Cu, no chemical reaction between the metal and the polymer were found.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5759-5764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam (PIB) deposition technique while the conventional deposition techniques such as thermal evaporation, e-beam evaporation, and sputtering give no measurable adhesion. With the PIB process, neither an adhesion enhancement layer nor substrate pretreatment is required. In the PIB deposition, up to 5% of self-ions and 3 kV substrate bias were used during deposition. Secondary-ion-mass spectroscopy revealed a Cu–Parylene-N intermixed layer located at the Cu/Parylene-N interface. It is proposed that the mechanical interlocking provided by the graded interface region may play a role for the observed adhesion enhancement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3264-3266 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 A(ring) tantalum oxide thin films at low temperature. At (approximately-equal-to)190 °C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21–22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (∼5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaOx where x(approximately-equal-to)1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2710-2712 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adhesion strength between sputter deposited Al on Teflon AF 1600 was increased from 〈0.15 N/mm to 〉0.7 N/mm by treating the interface with reactive ion assisted interface bonding and mixing (RIAIBM) and subsequent annealing. X-ray photoelectron spectroscopy measurements indicate the RIAIBM process and subsequent annealing promotes material mixing, implantation of the reactive species, bond breaking, and new bond formation at the interface. These factors are known to increase adhesion strength. The implementation of RIAIBM is straight forward and is suitable for application to both metal-on-polymer and polymer-on-metal systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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