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  • Electronic Resource  (66,041)
  • Book  (275)
  • 2020-2024  (56)
  • 2000-2004  (46,927)
  • 1935-1939  (14,697)
  • 1925-1929
  • 1920-1924
  • 1905-1909
  • 1890-1899  (4,638)
  • 1820-1829
  • 2023  (20)
  • 2022  (19)
  • 2021  (21)
  • 2001  (46,927)
  • 1935  (14,697)
  • 1899  (4,638)
  • 1871
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Material
Years
Year
Person/Organisation
Keywords
Language
  • 1
    Electronic Resource
    Electronic Resource
    A measurement of τ polarization in Z^0 decays (1992-8977)
    Amsterdam : Elsevier
    Physics Letters B 294 (1992), S. 466-478 
    Details
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(92)91549-O
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Measurement of the average lifetime of b hadrons (1993-4325)
    Amsterdam : Elsevier
    Physics Letters B 317 (1993), S. 474-484 
    Details
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(93)91027-K
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    Paper (German National Licenses)
    Fulltext
  • 3
    Book
    Book
    Matrix analysis and applied linear algebra (2023)
    Philadelphia, PA :SIAM,
    Details
    Title: Matrix analysis and applied linear algebra
    Author: Meyer, Carl D.
    Publisher: Philadelphia, PA :SIAM,
    Year of publication: 2023
    Pages: 250 Seiten
    Type of Medium: Book
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  • 4
    Book
    Book
    Bürgerliches Gesetzbuch : mit Nebengesetzen, insbesondere mit Einführungsgesetz (Auszug) einschließlich Rom I-, Rom II- und Rom III-Verordnungen sowie EU-Güterrechtsverordnungen, Haager Unterhaltsprotokoll und EU-Erbrechtsverordnung, Allgemeines Gleichbehandlungsgesetz (Auszug), Wohn- und Betreuungsvertragsgesetz, Unterlassungsklagengesetz (PalHome), Produkthaftungsgesetz, Erbbaurechtsgesetz, Wohnungseigentumsgesetz, Versorgungsausgleichsgesetz, Lebenspartnerschaftsgesetz (PalHome), Gewaltschutzgesetz (2023)
    München :C. H. Beck,
    Details
    Title: Bürgerliches Gesetzbuch : mit Nebengesetzen, insbesondere mit Einführungsgesetz (Auszug) einschließlich Rom I-, Rom II- und Rom III-Verordnungen sowie EU-Güterrechtsverordnungen, Haager Unterhaltsprotokoll und EU-Erbrechtsverordnung, Allgemeines Gleichbehandlungsgesetz (Auszug), Wohn- und Betreuungsvertragsgesetz, Unterlassungsklagengesetz (PalHome), Produkthaftungsgesetz, Erbbaurechtsgesetz, Wohnungseigentumsgesetz, Versorgungsausgleichsgesetz, Lebenspartnerschaftsgesetz (PalHome), Gewaltschutzgesetz
    Author: Palandt, Otto
    Contributer: Brudermüller, Gerd , Ellenberger, Jürgen , Götz, Isabell , Grüneberg, Christian
    Edition: 83., neubearbeitete Auflage
    Publisher: München :C. H. Beck,
    Year of publication: 2023
    Pages: 3500 Seiten
    ISBN: 978-3-406-80470-0
    Type of Medium: Book
    Language: German
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  • 5
    Book
    Book
    Bürgerliches Gesetzbuch : mit Allgemeinem Gleichbehandlungsgesetz, Produkthaftungsgesetz, Wohnungseigentumsgesetz, ErbauRG (2023)
    München :dtv,
    Details
    Title: Bürgerliches Gesetzbuch : mit Allgemeinem Gleichbehandlungsgesetz, Produkthaftungsgesetz, Wohnungseigentumsgesetz, ErbauRG
    Contributer: Köhler, Helmut
    Edition: 92. Auflage
    Publisher: München :dtv,
    Year of publication: 2023
    Pages: 947 Seiten
    ISBN: 978-3-423-53212-9
    Type of Medium: Book
    Language: German
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  • 6
    Book
    Book
    Fairness and Machine Learning : Limitations and Opportunities (2023)
    Cambridge :MIT Press,
    Details
    Title: Fairness and Machine Learning : Limitations and Opportunities
    Author: Barocas, Solon
    Contributer: Hardt, Moritz
    Publisher: Cambridge :MIT Press,
    Year of publication: 2023
    Pages: 320 Seiten
    ISBN: 978-0-262-04861-3
    Type of Medium: Book
    Language: English
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  • 7
    Book
    Book
    Wie kommt die GND (Gemeinsame Normdatei) ins Archiv? : Nutzung der Personennormdaten für die archivische Erschließung (2023)
    Birkenwerder :BibSpder,
    Details
    Title: Wie kommt die GND (Gemeinsame Normdatei) ins Archiv? : Nutzung der Personennormdaten für die archivische Erschließung
    Author: Hoinkis, Gudrun
    Publisher: Birkenwerder :BibSpder,
    Year of publication: 2023
    Pages: 112 Seiten
    ISBN: 978-3-946911-13-5
    Type of Medium: Book
    Language: German
    URL: Inhaltsverzeichnis
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  • 8
    Book
    Book
    ¬The¬ eye of the master : a social history of artificial intelligence (2023)
    London ; New York :Verso,
    Details
    Title: ¬The¬ eye of the master : a social history of artificial intelligence
    Author: Pasquinelli, Matteo
    Publisher: London ; New York :Verso,
    Year of publication: 2023
    Pages: 272 Seiten
    ISBN: 978-1-78873-006-8
    Type of Medium: Book
    Language: English
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  • 9
    Book
    Book
    Computational formalism : art history and machine learning (2023)
    Cambridge :MIT Press,
    Details
    Title: Computational formalism : art history and machine learning
    Author: Wasielewski, Amanda
    Publisher: Cambridge :MIT Press,
    Year of publication: 2023
    Pages: XII, 188 Seiten
    ISBN: 978-0-262-37474-3
    Type of Medium: Book
    Language: English
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  • 10
    Book
    Book
    Scripting : das Praxisbuch für Administratoren und DevOps-Teams (2023)
    Bonn :Rheinwerk,
    Details
    Title: Scripting : das Praxisbuch für Administratoren und DevOps-Teams
    Author: Kofler, Michael
    Edition: 1. Auflage
    Publisher: Bonn :Rheinwerk,
    Year of publication: 2023
    Pages: 492 Seiten
    ISBN: 978-3-8362-9424-9
    Type of Medium: Book
    Language: German
    URL: Inhaltsverzeichnis
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  • 11
    Book
    Book
    Generative deep learning : teaching machines to paint, write, compose, and play (2023)
    Beijing ; Boston ; Farnham ; Sebastopol ; Tokyo :O'Reilly,
    Details
    Title: Generative deep learning : teaching machines to paint, write, compose, and play
    Author: Foster, David
    Contributer: Friston, Karl J.
    Edition: second edition
    Publisher: Beijing ; Boston ; Farnham ; Sebastopol ; Tokyo :O'Reilly,
    Year of publication: 2023
    Pages: 453 Seiten
    ISBN: 978-1-098-13418-1
    Type of Medium: Book
    Language: English
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  • 12
    Book
    Book
    Brain and behavior : a cognitive neuroscience perspective (2023)
    New York :Oxford University Press,
    Details
    Title: Brain and behavior : a cognitive neuroscience perspective
    Author: Eagleman, David
    Contributer: Downar, Jonathan
    Edition: 2nd revised edition
    Publisher: New York :Oxford University Press,
    Year of publication: 2023
    Pages: 688 Seiten
    Type of Medium: Book
    Language: English
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  • 13
    Book
    Book
    Handelsgesetzbuch : mit GmbH & Co., Handelsklauseln, Bank- und Börsenrecht, Transportrecht (ohne Seerecht); Band 9 (2023)
    Details
    Title: Handelsgesetzbuch : mit GmbH & Co., Handelsklauseln, Bank- und Börsenrecht, Transportrecht (ohne Seerecht); Band 9
    Author: Hopt, Klaus J.
    Contributer: Kumpan, Christoph , Merkt, Hanno , Roth, Markus
    Edition: 43. Auflage
    Year of publication: 2023
    Pages: 3250 Seiten
    Series Statement: Beck'sche Kurz-Kommentare Band 9
    ISBN: 978-3-406-80605-6
    Type of Medium: Book
    Language: German
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  • 14
    Book
    Book
    Aktiengesetz, GmbH-Gesetz; 5010 (2023)
    Details
    Title: Aktiengesetz, GmbH-Gesetz; 5010
    Contributer: Hirte, Heribert
    Edition: 50., überarbeitete Auflage
    Year of publication: 2023
    Pages: 540 Seiten
    Series Statement: dtv : Beck-Texte im dtv 5010
    ISBN: 978-3-423-53209-9
    Type of Medium: Book
    Language: German
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  • 15
    Book
    Book
    Arbeitsschutz von A-Z 2023 : Fachwissen im praktischen Taschenformat (2023)
    Freiburg im Breisgau :Haufe-Lexware,
    Details
    Title: Arbeitsschutz von A-Z 2023 : Fachwissen im praktischen Taschenformat
    Contributer: Schaub, Sabine , Scheil, Michael , Töpfer, Gudrun L. , Kiparski, Rainer von
    Publisher: Freiburg im Breisgau :Haufe-Lexware,
    Year of publication: 2023
    Pages: 960 Seiten
    ISBN: 978-3-648-16700-7
    Type of Medium: Book
    Language: German
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  • 16
    Book
    Book
    ¬An¬ introduction to medicinal chemistry / (2023)
    Oxford :Oxford University Press,
    Details
    Title: ¬An¬ introduction to medicinal chemistry /
    Author: Patrick, Graham L.
    Edition: 7th revised edition
    Publisher: Oxford :Oxford University Press,
    Year of publication: 2023
    Pages: 960 S.
    ISBN: 978-0-19-886666-4
    Type of Medium: Book
    Language: English
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  • 17
    Book
    Book
    Systemkritik! : Essays für eine Kulturpolitik der Transformation (2023)
    Bielefeld :Transcript,
    Details
    Title: Systemkritik! : Essays für eine Kulturpolitik der Transformation
    Author: Reiner, Svenja
    Contributer: Sievers, Simon , Mohr, Henning
    Publisher: Bielefeld :Transcript,
    Year of publication: 2023
    Pages: 240 Seiten
    ISBN: 978-3-8376-6655-7
    Type of Medium: Book
    Language: German
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  • 18
    Book
    Book
    Aktiengesetz /; Band 53 (2023)
    München :C.H. Beck,
    Details
    Title: Aktiengesetz /; Band 53
    Author: Hüffer, Uwe [Sonstige] [Begründer eines Werks]
    Contributer: Koch, Jens
    Edition: 17. Auflage
    Publisher: München :C.H. Beck,
    Year of publication: 2023
    Pages: L, 2743 Seiten ; , 19.4 cm x 12.8 cm
    Series Statement: Beck'sche Kurz-Kommentare Band 53
    ISBN: 978-3-406-79753-8
    Type of Medium: Book
    Language: German
    Parallel Title: Erscheint auch als Online-Ausgabe 978-3-406-79753-8
    URL: Inhaltstext
    URL: Inhaltsverzeichnis
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  • 19
    Book
    Book
    Programming your GPU with OpenMP : performance portability for GPUs (2023)
    Cambridge, Massachusetts ; London, England :MIT Press,
    Details
    Title: Programming your GPU with OpenMP : performance portability for GPUs
    Author: Deakin, Tom
    Contributer: Mattson, Timothy G.
    Publisher: Cambridge, Massachusetts ; London, England :MIT Press,
    Year of publication: 2023
    Pages: 336 Seiten
    ISBN: 978-0-262-54753-6
    Type of Medium: Book
    Language: English
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  • 20
    Book
    Book
    Matrix analysis and applied linear algebra : Study and Solutions Guide (2023)
    Philadelphia, PA :SIAM,
    Details
    Title: Matrix analysis and applied linear algebra : Study and Solutions Guide
    Author: Meyer, Carl D.
    Publisher: Philadelphia, PA :SIAM,
    Year of publication: 2023
    Pages: 250 Seiten
    Type of Medium: Book
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  • 21
    Book
    Book
    ¬Die¬ Automatisierung des Schreibens & Gegenprogramme der Literatur / (2022)
    Berlin :Matthes & Seitz Berlin,
    Details
    Title: ¬Die¬ Automatisierung des Schreibens & Gegenprogramme der Literatur /
    Author: Schönthaler, Philipp
    Edition: Erste Auflage
    Publisher: Berlin :Matthes & Seitz Berlin,
    Year of publication: 2022
    Pages: 575 Seiten
    ISBN: 978-3-7518-0341-0 , 9783751803427
    Type of Medium: Book
    Language: German
    URL: https://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=3145923&site=ehost-live
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  • 22
    Book
    Book
    Schreibenlassen : Texte zur Literatur im Digitalen (2022)
    Berlin :August Verlag,
    Details
    Title: Schreibenlassen : Texte zur Literatur im Digitalen
    Author: Bajohr, Hannes
    Edition: Erste Auflage
    Publisher: Berlin :August Verlag,
    Year of publication: 2022
    Pages: 223 Seiten
    ISBN: 9783751890021
    Type of Medium: Book
    Language: German
    URL: https://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=3319136&site=ehost-live
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  • 23
    Book
    Book
    Probabilistic Machine Learning : An Introduction (2022)
    Cambridge :MIT Press,
    Details
    Title: Probabilistic Machine Learning : An Introduction
    Author: Murphy, Kevin
    Publisher: Cambridge :MIT Press,
    Year of publication: 2022
    Pages: 944 Seiten
    ISBN: 978-0-262-04682-4
    Type of Medium: Book
    Language: German
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  • 24
    Book
    Book
    Discovering modern C++ : an intensive course for scientists, engineers, and programmers (2022)
    Details
    Title: Discovering modern C++ : an intensive course for scientists, engineers, and programmers
    Author: Gottschling, Peter
    Edition: 2nd edition
    Year of publication: 2022
    Pages: 576 Seiten
    Series Statement: C++ in-depth series
    ISBN: 978-0-13-667764-2
    Type of Medium: Book
    Language: English
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  • 25
    Book
    Book
    Terraform : up and running : writing infrastructure as code (2022)
    Sebastopol ; Boston :O'Reilly Media,
    Details
    Title: Terraform : up and running : writing infrastructure as code
    Author: Brikman, Yevgeniy
    Edition: 3rd edition
    Publisher: Sebastopol ; Boston :O'Reilly Media,
    Year of publication: 2022
    Pages: 459 Seiten
    ISBN: 978-1-0981-1674-3
    Type of Medium: Book
    Language: English
    Keywords: Cloud computing ; Operating systems (Computers) ; Software
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  • 26
    Book
    Book
    Handelsgesetzbuch : mit Einführungsgesetz, Publizitätsgesetz und Handeslssregisterverordnung; 5002 : Beck-Texte im dtv (2022)
    Details
    Title: Handelsgesetzbuch : mit Einführungsgesetz, Publizitätsgesetz und Handeslssregisterverordnung; 5002 : Beck-Texte im dtv
    Contributer: Fleischer, Holger , Deutschland [Normerlassende Gebietskörperschaft]
    Edition: 68., überarbeitete Auflage
    Year of publication: 2022
    Pages: 371 Seiten
    Series Statement: dtv ; 5002 5002 : Beck-Texte im dtv
    ISBN: 978-3-423-53175-7
    Type of Medium: Book
    Language: German
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  • 27
    Book
    Book
    ¬The¬ Routledge companion to digital humanities and art history / (2022)
    New York ; London :Routledge, Taylor & Francis Group,
    Details
    Title: ¬The¬ Routledge companion to digital humanities and art history /
    Contributer: Brown, Kathryn
    Publisher: New York ; London :Routledge, Taylor & Francis Group,
    Year of publication: 2022
    Pages: 524 Seiten
    ISBN: 978-1-032-33639-8
    Type of Medium: Book
    Language: English
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  • 28
    Book
    Book
    Schematron : a language for validating XML (2022)
    XML Press,
    Details
    Title: Schematron : a language for validating XML
    Author: Siegel, Erik
    Publisher: XML Press,
    Year of publication: 2022
    Pages: 272 SeitenXML Press
    ISBN: 978-1-937434-80-9
    Type of Medium: Book
    Language: English
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  • 29
    Book
    Book
    GWB : Vergaberecht Kommentar (2022)
    Köln :Bundesanzeiger,
    Details
    Title: GWB : Vergaberecht Kommentar
    Contributer: Müller-Wrede, Malte , Amelung, Steffen
    Edition: 2. aktual. und erw. Aufl.
    Publisher: Köln :Bundesanzeiger,
    Year of publication: 2022
    Pages: LIX, 1443 Seiten
    ISBN: 978-3-8462-1093-2
    Type of Medium: Book
    Language: German
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  • 30
    Book
    Book
    Networks of Care : Politiken des (Er)haltens und (Ent)sorgens (2022)
    Berlin :nGbK,
    Details
    Title: Networks of Care : Politiken des (Er)haltens und (Ent)sorgens
    Author: Schäffler, Anna
    Contributer: Schäfer, Friederike , Buurman, Nanne , Neue Gesellschaft für Bildende Kunst / Arbeitsgruppe Networks of Care
    Edition: 1. Auflage
    Publisher: Berlin :nGbK,
    Year of publication: 2022
    Pages: 178 Seiten
    ISBN: 978-3-938515-95-2
    Type of Medium: Book
    Language: German , English
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  • 31
    Book
    Book
    Deep learning with Python / (2022)
    Shelter Island, NY :Manning Publications,
    Details
    Title: Deep learning with Python /
    Author: Chollet, François
    Edition: Second edition
    Publisher: Shelter Island, NY :Manning Publications,
    Year of publication: 2022
    Pages: 400 Seiten
    ISBN: 978-1-61729-686-4
    Type of Medium: Book
    Language: English
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  • 32
    Book
    Book
    99 + 1 Warm-ups für den digitalen Raum : Wie du räumliche Distanzen überwindest, Menschen verbindest und für frische Energie sorgst! (2022)
    Berlin :BoD – Books on Demand,
    Details
    Title: 99 + 1 Warm-ups für den digitalen Raum : Wie du räumliche Distanzen überwindest, Menschen verbindest und für frische Energie sorgst!
    Author: Tonhauser, Pauline
    Publisher: Berlin :BoD – Books on Demand,
    Year of publication: 2022
    Pages: 310 Seiten
    Type of Medium: Book
    Language: German
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  • 33
    Book
    Book
    PostgreSQL : Praxisbuch für Administratoren und Entwickler (2022)
    München :Hanser,
    Details
    Title: PostgreSQL : Praxisbuch für Administratoren und Entwickler
    Author: Fröhlich, Lutz
    Publisher: München :Hanser,
    Year of publication: 2022
    Pages: XI, 585 Seiten : , Illustrationen, Diagramme
    ISBN: 978-3-446-46929-7
    Type of Medium: Book
    Language: German
    URL: Inhaltsverzeichnis
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  • 34
    Book
    Book
    Praxisbuch Infografik : Informationen visualisieren, Daten präzise darstellen, gängige Fehler vermeiden (2022)
    Frechen :mitp,
    Details
    Title: Praxisbuch Infografik : Informationen visualisieren, Daten präzise darstellen, gängige Fehler vermeiden
    Author: Fichtel, Stefan
    Edition: 1. Auflage
    Publisher: Frechen :mitp,
    Year of publication: 2022
    Pages: 276 Seiten : , Illustrationen, Diagramme
    ISBN: 978-3-7475-0443-7
    Type of Medium: Book
    Language: German
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  • 35
    Book
    Book
    Introduction to nanophotonics / (2022)
    Oxford :Oxford University Press,
    Details
    Title: Introduction to nanophotonics /
    Author: Benisty, Henri
    Contributer: Greffet, Jean-Jacques , Lalanne, Philippe
    Publisher: Oxford :Oxford University Press,
    Year of publication: 2022
    Pages: xiv, 655 Seiten
    ISBN: 978-0-19-878613-9
    Type of Medium: Book
    Language: English
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  • 36
    Book
    Book
    ¬The¬ future of enriched, linked, open and filtered metadata : making sense of IFLA LRM, RDA, linked data and BIBFRAME (2022)
    London :Facet Publishing,
    Details
    Title: ¬The¬ future of enriched, linked, open and filtered metadata : making sense of IFLA LRM, RDA, linked data and BIBFRAME
    Author: Alemu, Getaneh
    Publisher: London :Facet Publishing,
    Year of publication: 2022
    Pages: 222 Seiten
    ISBN: 978-1-78330-492-9 , 978-1-78330-494-3
    Type of Medium: Book
    Language: English
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  • 37
    Book
    Book
    Advanced reduced order methods and applications in computational fluid dynamics /; 27 (2022)
    Philadelphia :SIAM, Society for Industrial and Applied Mathematics,
    Details
    Title: Advanced reduced order methods and applications in computational fluid dynamics /; 27
    Author: Rozza, Gianluigi
    Contributer: Stabile, Giovanni , Ballarin, Francesco
    Publisher: Philadelphia :SIAM, Society for Industrial and Applied Mathematics,
    Year of publication: 2022
    Pages: 466 Seiten
    Series Statement: Computational science & engineering 27
    ISBN: 978-1-61197-725-7
    Type of Medium: Book
    Language: English
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    Liberating structures : Entscheidungsfindung revolutionieren (2021)
    München :Verlag Franz Vahlen GmbH,
    Details
    Title: Liberating structures : Entscheidungsfindung revolutionieren
    Author: Steinhöfer, Daniel
    Publisher: München :Verlag Franz Vahlen GmbH,
    Year of publication: 2021
    Pages: 120 Seiten
    ISBN: 978-3-8006-5929-6
    Type of Medium: Book
    Language: German
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  • 39
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    Book
    Crashkurs BWA : betriebswirtschaftliche Auswertungen erstellen, lesen und verstehen (2021)
    Details
    Title: Crashkurs BWA : betriebswirtschaftliche Auswertungen erstellen, lesen und verstehen
    Author: Träger, Elisabeth
    Edition: 1. Auflage
    Year of publication: 2021
    Pages: 180 Seiten
    ISBN: 978-3-648-13768-0
    Type of Medium: Book
    Language: German
    URL: Inhaltstext
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  • 40
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    Introduction to Quantum Computing / (2021)
    Basel :Springer International Publishing,
    Details
    Title: Introduction to Quantum Computing /
    Author: LaPierre, Ray
    Publisher: Basel :Springer International Publishing,
    Year of publication: 2021
    Pages: 368 Seiten
    ISBN: 978-3-030-69317-6
    Type of Medium: Book
    Language: English
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  • 41
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    Forschungsdatenmanagement und Recht : Datenschutz-, Urheber- und Vertragsrecht (2021)
    Feldkirch/Düns :Neugebauer,
    Details
    Title: Forschungsdatenmanagement und Recht : Datenschutz-, Urheber- und Vertragsrecht
    Author: Baumann, Paul
    Contributer: Krahn, Philipp , Lauber-Rönsberg, Anne
    Publisher: Feldkirch/Düns :Neugebauer,
    Year of publication: 2021
    Pages: 304 Seiten
    ISBN: 978-3-85376-328-5
    Type of Medium: Book
    Language: German
    URL: Inhaltsverzeichnis
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  • 42
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    Git Handbuch für Einsteiger : Der leichte Weg zum Git-Experten (2021)
    Landshut :BMU Media Verlag,
    Details
    Title: Git Handbuch für Einsteiger : Der leichte Weg zum Git-Experten
    Author: Fuchs, Paul
    Publisher: Landshut :BMU Media Verlag,
    Year of publication: 2021
    Pages: 307 Seiten
    ISBN: 978-3-96645-119-2
    Type of Medium: Book
    Language: German
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  • 43
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    Book
    Git für Dummies / (2021)
    Weinheim :Wiley-VCH,
    Details
    Title: Git für Dummies /
    Author: Kaufmann, Michael
    Contributer: Binkle, Harald
    Publisher: Weinheim :Wiley-VCH,
    Year of publication: 2021
    Pages: 417 Seiten
    ISBN: 978-3-527-71697-5
    Type of Medium: Book
    Language: German
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  • 44
    Book
    Book
    Linear Algebra : Theory, Intuition, Code (2021)
    Sincxpress Bv,
    Details
    Title: Linear Algebra : Theory, Intuition, Code
    Author: Cohen, Mike X
    Publisher: Sincxpress Bv,
    Year of publication: 2021
    Pages: 548 S.
    ISBN: 978-90-831366-0-8
    Type of Medium: Book
    Language: German
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  • 45
    Book
    Book
    Handbuch Prüfung ortsveränderlicher elektrischer Geräte : Prüfabläufe, Grenz- und Richtwerte gem. DIN VDE 0701-0702 für die Prüfung vor Ort (2021)
    Forum Verlag Herkert,
    Details
    Title: Handbuch Prüfung ortsveränderlicher elektrischer Geräte : Prüfabläufe, Grenz- und Richtwerte gem. DIN VDE 0701-0702 für die Prüfung vor Ort
    Contributer: Donath, Karl [Verfasser] , Rottmann, Rainer [Verfasser] , Gavrancic, Milan [Verfasser] , Orgel, Christian [Verfasser]
    Edition: 4. überarbeitete Auflage
    Publisher: Forum Verlag Herkert,
    Year of publication: 2021
    Pages: 311 Seiten
    ISBN: 978-3-96314-615-2
    Type of Medium: Book
    Language: German
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  • 46
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    Book
    Handbuch Prüfung ortsfester elektrischer Anlagen und Betriebsmittel : Prüfabläufe, Grenz- und Richtwerte gem. DIN VDE 0100-600 und 0105-100 für die Prüfung vor Ort (2021)
    Forum Verlag Herkert,
    Details
    Title: Handbuch Prüfung ortsfester elektrischer Anlagen und Betriebsmittel : Prüfabläufe, Grenz- und Richtwerte gem. DIN VDE 0100-600 und 0105-100 für die Prüfung vor Ort
    Author: Donath, Karl [Verfasser]
    Contributer: Rottmann, Rainer [Verfasser] , Orgel, Christian [Verfasser]
    Edition: 4. überarbeitete Auflage
    Publisher: Forum Verlag Herkert,
    Year of publication: 2021
    Pages: 374 Seiten
    Type of Medium: Book
    Language: German
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  • 47
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    Book
    HTML und CSS : das umfassende Handbuch (2021)
    Bonn :Rheinwerk Verlag,
    Details
    Title: HTML und CSS : das umfassende Handbuch
    Author: Wolf, Jürgen
    Edition: 4., aktualisierte und überarbeitete Auflage
    Publisher: Bonn :Rheinwerk Verlag,
    Year of publication: 2021
    Pages: 1158 Seiten
    ISBN: 978-3-8362-8117-1
    Type of Medium: Book
    Language: German
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  • 48
    Book
    Book
    Docker : das Praxisbuch für Entwickler und DevOps-Teams (2021)
    Details
    Title: Docker : das Praxisbuch für Entwickler und DevOps-Teams
    Author: Öggl, Bernd
    Contributer: Kofler, Michael
    Edition: 3. Aufl.
    Year of publication: 2021
    Pages: 496 S. : , Illustrationen, Diagramme
    ISBN: 978-3-8362-8634-3
    Type of Medium: Book
    Language: German
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  • 49
    Book
    Book
    Muster : Theorie der digitalen Gesellschaft (2021)
    München :C.H. Beck,
    Details
    Title: Muster : Theorie der digitalen Gesellschaft
    Author: Nassehi, Armin
    Edition: 1. Auflage
    Publisher: München :C.H. Beck,
    Year of publication: 2021
    Pages: 352 Seiten
    ISBN: 978-3-406-76786-9
    Type of Medium: Book
    Language: German
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  • 50
    Book
    Book
    ¬The¬ science of science / (2021)
    Cambridge :Cambridge University Press,
    Details
    Title: ¬The¬ science of science /
    Author: Wang, Dashun
    Contributer: Barabási, Albert-László
    Publisher: Cambridge :Cambridge University Press,
    Year of publication: 2021
    Pages: x, 303 Seiten
    ISBN: 978-1-108-71695-6
    Type of Medium: Book
    Language: English
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  • 51
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    Grundlagen der Eingruppierung TVöD und TV-L : das aktuelle Eingruppierungsrecht im öffentlichen Dienst (2021)
    Berlin :Walhalla und Praetoria Verlag,
    Details
    Title: Grundlagen der Eingruppierung TVöD und TV-L : das aktuelle Eingruppierungsrecht im öffentlichen Dienst
    Author: Richter, Achim
    Contributer: Gamisch, Annett , Mohr, Thomas
    Edition: 7., aktualisierte Auflage, Bearbeitungsstand: Juni 2017
    Publisher: Berlin :Walhalla und Praetoria Verlag,
    Year of publication: 2021
    Pages: 112 Seiten
    ISBN: 978-3-8029-1599-4
    Type of Medium: Book
    Language: German
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    Book
    Crashkurs Internes Kontrollsystem für Buchhaltung und Steuern / (2021)
    Details
    Title: Crashkurs Internes Kontrollsystem für Buchhaltung und Steuern /
    Author: Alves, Winfried
    Edition: 2. völlig überarbeitete und erweiterte Auflage
    Year of publication: 2021
    Pages: 167 Seiten
    ISBN: 978-3-648-14049-9
    Type of Medium: Book
    Language: German
    URL: Inhaltstext
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  • 53
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    Book
    Schwierige Geschäftsvorfälle richtig buchen / (2021)
    Freiburg im Breisgau :Haufe-Lexware,
    Details
    Title: Schwierige Geschäftsvorfälle richtig buchen /
    Author: Thomsen, Iris
    Contributer: Zöllner, Nikolaus
    Edition: 15. Auflage
    Publisher: Freiburg im Breisgau :Haufe-Lexware,
    Year of publication: 2021
    Pages: 413 Seiten
    ISBN: 978-3-648-14840-2
    Type of Medium: Book
    Language: German
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  • 54
    Book
    Book
    Programming Rust : fast, safe systems development (2021)
    Beijing ; Boston ; Farnham ; Sebastopol :O'Reilly,
    Details
    Title: Programming Rust : fast, safe systems development
    Author: Blandy, Jim
    Contributer: Orendorff, Jason , Tindall, Leonora
    Edition: Second edition
    Publisher: Beijing ; Boston ; Farnham ; Sebastopol :O'Reilly,
    Year of publication: 2021
    Pages: xix, 711 Seiten
    ISBN: 9781492052562
    Type of Medium: Book
    Language: English
    Parallel Title: Erscheint auch als Druck-Ausgabe 978-1-492-05259-3
    URL: https://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=2949563&site=ehost-live
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  • 55
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    Book
    Erfurter Kommentar zum Arbeitsrecht (2021)
    München :C.H. Beck,
    Details
    Title: Erfurter Kommentar zum Arbeitsrecht
    Contributer: Müller-Glöge, Rudi , Preis, Ulrich , Gallner, Inken
    Edition: 22. Auflage
    Publisher: München :C.H. Beck,
    Year of publication: 2021
    Pages: 3100 Seiten
    ISBN: 978-3-406-77038-8
    Type of Medium: Book
    Language: German
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  • 56
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    Book
    Götzendämmerung : Kunst und Künstliche Intelligenz (2021)
    Bielefeld :transcript,
    Details
    Title: Götzendämmerung : Kunst und Künstliche Intelligenz
    Contributer: Dotzler, Bernhard J. , Karpat, Berkan
    Publisher: Bielefeld :transcript,
    Year of publication: 2021
    Pages: 154 Seiten
    ISBN: 978-3-8376-5976-4
    Type of Medium: Book
    Language: German
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  • 57
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    Book
    Computing : archives for informatics and numerical computation; Supplementum (1977-2003)
    Wien [u.a.] :Springer, ; 1.1977 - 16.2003; damit Ersch. eingest.
    Details
    Title: Computing : archives for informatics and numerical computation; Supplementum
    Publisher: Wien [u.a.] :Springer,
    Year of publication: 1977-2003
    Dates of Publication: 1.1977 - 16.2003; damit Ersch. eingest.
    Type of Medium: Book
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  • 58
    Electronic Resource
    Electronic Resource
    Growth of β-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4474-4484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the formation of β-FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35–50 nm deposited on Si (100) were irradiated with 80–700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 °C. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mössbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 °C the whole Fe layer is transformed to a mixture of Fe3Si, cursive-epsilon-FeSi, and β-FeSi2 phases. At 400–450 °C, a unique, layer by layer growth of β-FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm β-FeSi2 layer was achieved by irradiation with 205 keV Xe to 2×1016 ions/cm2, at a temperature of 600 °C. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of β-FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase β-FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 °C of 35 nm Fe/Si bilayers premixed with Xe at 450 °C. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of β-FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405818
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  • 59
    Electronic Resource
    Electronic Resource
    Enhanced ultraviolet emission and optical properties in polyvinyl pyrrolidone surface modified ZnO quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4489-4493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn2+ ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406973
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  • 60
    Electronic Resource
    Electronic Resource
    Origin of the unusual dependence of Raman D band on excitation wavelength in graphite-like materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4494-4497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have revisited the still unresolved puzzle of the dispersion of the Raman disorder-induced D band as a function of laser excitation photon energy EL in graphite-like materials. We propose that the D mode is a combination of an optic phonon at the K point in the Brillioun zone and an acoustic phonon whose momentum is determined uniquely by the double resonance condition. The fit of the experimental data with the double-resonance model yields the reduced effective mass of 0.025 me for the electron-hole pairs corresponding to the A2 transition, in agreement with other experiments. The model can also explain the difference between ωS and ωAS for D and D* modes, and predicts its dependence on the Raman excitation frequency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408590
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  • 61
    Electronic Resource
    Electronic Resource
    Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4800-4804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiNx. Over a broad range of deposition conditions there were minimal changes (〈10%) in breakdown voltage and the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induced damage did not appear to play a significant role in the results. The ideality factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410323
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  • 62
    Electronic Resource
    Electronic Resource
    Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4791-4795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrostatic force microscopy (EFM) with phase detection has been applied to cleaved cross sections of wafer-bonded transparent substrate (TS) AlGaInP light-emitting diode (LED) structures. EFM was performed with the LED under active bias to image the voltage drops across the device layers. Measurements on a nonwafer-bonded, absorbing substrate (AS) AlGaInP LED wafer, showed a voltage drop only at the p–n junction. A TS wafer with high forward voltage (Vf ) showed a much larger voltage drop at the wafer-bonded interface, compared with a normal TS LED wafer. Secondary ion mass spectrometry profiles of these wafers revealed ∼1×1013 cm−2 of carbon at the bonded interface in the high Vf sample, compared to ∼3×1012 cm−2 in the normal wafer. The unwanted voltage drop at the bonded interface was likely caused by a combination of carbon acting as a p-type dopant and the presence of interface states due to a ∼3° in-plane rotational misalignment at wafer bonding. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406549
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  • 63
    Electronic Resource
    Electronic Resource
    Role of thermal energy on the magnetic properties of laminated antiferromagnetically coupled recording media (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3442-3449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal energy (kBT), which has been found to play some important roles in the magnetic properties of recently developed antiferromagnetically coupled media, is described. It was observed that the thermal energy helps to obtain an antiparallel configuration of moments at remanence. Therefore, a reduction in the remnant moment–thickness product (Mrδ) is observed, even for smaller values of J (interface coupling constant) than those used in simulations that do not consider thermal energy. The magnetic viscosity measurement helps to distinguish the magnetization decay behavior of the top and bottom layers. The magnetic moments of top and bottom layers show maximum decay at different fields and the decay rates approximately scale with their thickness. Viscosity results also point out that the magnetization reversal of the bottom layer should occur in the first quadrant, in order to obtain a low noise and thermally stable media. Micromagnetic simulation was performed by including thermal effects. In that case, Mrδ reduction could be obtained for smaller values of J than in the case where thermal energy is not included in the simulation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399030
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  • 64
    Electronic Resource
    Electronic Resource
    Thomson scattering in a low-pressure neon mercury positive column (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3720-3725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron density and the electron temperature in a low-pressure neon mercury positive column are determined using Thomson scattering. Special attention has been given to the stray light reduction in the Thomson scattering setup. The results are obtained in a discharge tube with a 26 mm diam, 10 mbar of neon, a mercury pressure inbetween 0.14 and 0.85 Pa, and an electric current ranging from 100 to 400 mA. The systematic error in the electron density is 15%–45%, the statistical error is 25%–35%. The total error in the electron temperature is 15%–35%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390497
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  • 65
    Electronic Resource
    Electronic Resource
    Bulk diffusion measurements to study the effectiveness of barrier layers: I. Mathematical treatment (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3799-3809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The exchange of a tracer material, e.g., a radioactive isotope, between two samples forming a diffusion couple depends on the rate of the diffusion of the tracer in each of the two samples and also on the rate of the transfer of the tracer across the interface between these samples which may or may not contain a barrier layer with a different chemical composition and/or structure. Diffusion couples with three different initial tracer distributions are considered. In order to extract from experimental data values for tracer diffusion coefficients and for the rate constant for the tracer transport across the interface, a detailed analysis of the required mathematics is given. This analysis is of interest as well for obtaining true values for bulk diffusivities and also to characterize quantitatively the resistance of interfaces (=barriers) to the exchange of certain species. Some examples of experimental results are presented and briefly discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402150
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  • 66
    Electronic Resource
    Electronic Resource
    Study of copper silicide retardation effects on copper diffusion in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3822-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A B-buried layer with a dose of 1×1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343518
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  • 67
    Electronic Resource
    Electronic Resource
    Bulk diffusion measurements to study the effectiveness of barrier layers: II. Exchange of sodium between liquid crystal display glass substrates with different barrier layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3810-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Na-22 tracer diffusion experiments were performed to study the exchange of Na ions between liquid crystal display glass substrates (Corning Code 1737) separated by different types of layers. Different types of layers were generated (i) by RCA cleaning, (ii) by preannealing in wet air, and (iii) by low pressure chemical vapor deposition. A sandwich configuration was used to study the effect of such layers between two glass substrates on the exchange of Na ions between these substrates. The sandwiches were of the type substrate 1 (containing Na-22 tracer)/layer/substrate 2. Diffusion annealing of such sandwiches led to a redistribution of the sodium tracer. This redistribution was analyzed experimentally with regard to the sodium tracer diffusion coefficient in the bulk and the rate of the sodium tracer transfer across the layer. It was found that all three types of layers considered act as barrier layers, i.e., they suppress the exchange of Na ions between glass substrates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402151
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  • 68
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    Crystallization kinetics of sputter-deposited amorphous AgInSbTe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3816-3821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determination of crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of the electrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160 °C which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a=4283 Å, c=16 995 Å) are obtained upon annealing above 160 °C. By applying Kissinger's method, an activation energy of 3.03±0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2%±0.2% and a thickness decrease of 5.5%±0.2% upon crystallization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405141
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  • 69
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    Generalized anisotropic ellipsometry applied to an organic single crystal: Potassium acid phthalate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3838-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of generalized anisotropic ellipsometry on a biaxial organic single crystal, namely, potassium acid phthalate, are discussed and analyzed to obtain the optical functions of the crystal along the different crystal directions. The dispersion of the real refractive indices nx, ny, and nz in the spectral range from 300 to 1400 nm, as well as the values of the extinction coefficient kx,y at the absorption edge are determined and modeled. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402967
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  • 70
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    Optical properties of Ag and Au nanowire gratings (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3825-3830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of regularly arranged noble metal wires with nanoscopic cross sections (nanowire gratings) strongly depends on the polarization direction of the incident light. We use silver and gold nanowire gratings produced by electron beam lithography to study this effect by optical extinction spectroscopy. For a polarization direction perpendicular to the wire axis, the excitation of a dipolar plasmon mode dominates the extinction spectrum. The spectral position of the plasmon resonance can be tuned by an appropriate choice of nanowire geometry and material. For a polarization direction parallel to the wire axis, the profile of the extinction spectrum varies mainly as a function of the grating constant. In particular, a transmission maximum for small grating constants is found. By combining the surface plasmon excitation and grating effect for orthogonal polarization directions, a spectrally selective polarizer with an extinction ratio of 26 is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404425
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  • 71
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    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3887-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a selective-area deposition process using chlorosilane-treated ultrathin SiO2 masks on which the patterns are directly defined by irradiation of a focused electron beam (EB). Three different chlorosilane gases (SiH2Cl2, SiHCl3, and SiCl4) were first adsorbed on the SiO2 surfaces, and the regions with reactive sites were defined by taking advantage of electron-stimulated desorption (ESD) of the surface adsorbates. For the SiHCl3- and SiH2Cl2-treated surfaces, the nucleation density was remarkably high in the EB-irradiated regions. Such nucleation enhancement was less significant for the SiCl4-treated surface. For the purpose of direct patterning and selective growth, we conclude that SiHCl3 is the optimum treatment gas because it effectively suppresses Si nucleation outside of the EB-irradiated patterns. The overall ESD sensitivity of the SiHCl3-adsorbed mask was 50 mC/cm2, and a significant nucleation enhancement was observed by irradiation of 7 mC/cm2. We also report an extension of this selective-area processing to window opening through the ultrathin SiO2 mask layer. The factors limiting the minimum feature size of the grown Si structures and the opened windows are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402978
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  • 72
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    Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2689-2698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive, quantitative analysis is presented of the deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems. The analysis combines a hierarchical theoretical approach with experimental measurements. Continuum linear elasticity theory is linked with atomic-scale calculations of structural relaxation for detailed theoretical studies of deformation in systems consisting of InAs thin films on thin GaAs(111)A substrates that are mechanically unconstrained at their bases. Molecular-beam epitaxy is used to grow very thin InAs films on both thick and thin GaAs buffer layers on epi-ready GaAs(111)A substrates. The deformation state of these samples is characterized by x-ray diffraction (XRD). The interplanar distances of thin GaAs buffer layers along the [220] and [111] crystallographic directions obtained from the corresponding XRD spectra indicate clearly that thin buffer layers deform parallel to the InAs/GaAs(111)A interfacial plane, thus aiding in the accommodation of the strain induced by lattice mismatch. The experimental measurements are in excellent agreement with the calculated lattice interplanar distances and the corresponding strain fields in the thin mechanically unconstrained substrates considered in the theoretical analysis. Therefore, this work contributes direct evidence in support of our earlier proposal that thin buffer layers in layer-by-layer semiconductor heteroepitaxy exhibit mechanical behavior similar to that of compliant substrates [see, e.g., B. Z. Nosho, L. A. Zepeda-Ruiz, R. I. Pelzel, W. H. Weinberg, and D. Maroudas, Appl. Phys. Lett. 75, 829 (1999)]. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392966
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  • 73
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    Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2725-2729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparison of simulated and experimental images indicates nonuniform composition distribution within the coherent islands when the islands were grown at high temperatures (700 °C), but uniform composition for growth at lower temperatures (600 °C). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394900
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  • 74
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    Relationship between gain and Yb3+ concentration in Er3+–Yb3+ doped waveguide amplifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4314-4320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a rate equation propagation model of an Er3+/Yb3+ doped Al2O3 waveguide amplifier with copropagating pump at 980 nm to investigate the dependence of gain on Yb3+ concentration. The model includes excited state absorption and energy transfer upconversion processes within the Er3+ as well as the relevant energy transfer processes between Yb3+ and Er3+. The results of the calculations indicate a close relationship of the parameters gain, launched pump power, waveguide length, and Yb3+ concentration. Codoping with a well-chosen Yb3+ concentration is shown to increase the gain around 1530 nm for all combinations of these parameters. The gain is improved most by Yb3+ codoping at pump powers around the amplifier threshold. At high pump powers the increase in gain of an Er3+/Yb3+ doped waveguide is insignificant compared to that of its Er3+ doped counterpart. Furthermore for each launched pump power, a nonzero Yb3+ concentration can be determined, which maximizes the gain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406550
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  • 75
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    Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4321-4327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transmission of ultrashort pulses through impurity band-based photonic crystal waveguides. It is found that in the general case the transmission behavior depends strongly on the pulse width with respect to the resonance linewidth in impurity bands. By controlling the configuration of the waveguides, quasiflat impurity bands can be obtained in which the dependence of transmission on pulse width is very weak. As long as the pulse width is much narrower than the bandwidth, pulses can transmit through the quasiflat impurity bands with negligible distortion and attenuation. The conditions necessary for achieving quasiflat impurity bands are derived by examining waveguides of different configurations and properties. The mechanism responsible for the formation of quasiflat impurity bands is revealed from the discussion of the symmetry of single defect and their coupling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407318
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  • 76
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    Angular effects and beam quality in optical parametric amplification (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4328-4337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Advances in optical parametric devices, in particular those requiring high conversion efficiency, rely on pump laser and gain medium properties. We describe and theoretically model the source of dephasing due to angular deviation from ideal phase matching in optical parametric amplification. Real laser beams have angular content, which is described by their spatial frequency spectrum. Such beams cannot be treated as single plane waves in nonlinear interactions. Our mathematical model is based on a plane wave decomposition of Gaussian and top-hat beams into their components in spatial frequencies. Several popular nonlinear materials (beta-barium borate, lithium borate, and potassium dihydrogen phosphate) are examined for phase matching angles and dephasing is rigorously calculated. The impact of the beam angular content on small signal gain and on conversion efficiency in the strongly depleted regime is evaluated numerically. In addition, a criterion is formulated for beam quality tolerance in optical parametric amplifiers, for critical and noncritical phase matching. The impact of initial conditions in optical parametric amplification is considered. Our calculations are intended primarily for devices pumped with long (nanosecond) pulses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407312
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  • 77
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    Single layer light-emitting devices with high efficiency and long lifetime based on tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4338-4345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, single layer, light-emitting devices have been prepared from pristine tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphate ([Ru(bpy)3](PF6)2) and blends of [Ru(bpy)3](PF6)2 with glassy polymers such as poly(methylmethacrylate) (PMMA), polycarbonate (PC), and polystyrene. Due to the electrochemical nature of the device operation, a high external quantum efficiency at a low operating voltage is achieved. For pristine devices fabricated with an Al cathode, external quantum efficiencies in the range of 1.2%–1.5% at 100–1000 cd/m2 have been achieved. Such devices, however, show signs of degradation in time when stored in the off state in inert atmosphere. Blending with glassy polymers such as PMMA results in an improved film quality and a slowing of the device degradation which, in return, decreases the leakage current during device operation. Therefore, external quantum efficiencies of 2%–2.5% at a light output of 200 cd/m2 are observed when the electroluminescent tris(2,2′ bipyridyl) ruthenium(II) complex is blended with PMMA or PC. In addition, increased efficiency and lifetime are found when the devices are operated under a 50% duty cycle at 5 V and 1 kHz compared to the operation under constant voltage. With a 50% duty cycle, half lives of around 500–1100 h continuous operation have been achieved at luminance levels in the range of 200–350 cd/m2. When Ag is used as the cathode material, PMMA blend devices exhibit external quantum efficiencies in the range of 2.5%–3.0% at luminance levels of around 50 cd/m2. In addition, devices with a Ag cathode show no signs of degradation when stored in the off state. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409577
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  • 78
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    Two-dimensional electrical modeling of asymmetric radio-frequency discharges for geometry effect analysis. Comparison with experiments (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4346-4354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent two-dimensional particle model coupled to the external circuit equations was developed in an asymmetrical configuration for the self-bias voltage calculation and the reactor design study. An intermediate modeling was performed in one and two symmetrical geometries. The one-dimensional model is used to optimize the computing time which is reduced by a factor of 10 by using some optimization techniques. It is also used to validate the charged particle and basic data choices. We have shown that the consideration of only two charged particle species (electron and H3+ positive ion) is sufficient in the present hydrogen radio-frequency discharge modeling. Computational results (i.e., power density and self-bias voltage) are in good agreement with experimental results. A strong gradient of the plasma parameters (such as electric field, potential, charged particle densities and energies) was observed in the periphery of the driven electrode. Furthermore, the present two-dimensional asymmetric model shows that the interelectrode distance increase (from 1.7 up to 3.7 cm) can lead to reducing the plasma heterogeneity due to the geometrical electric field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389338
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  • 79
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    Large room-temperature magnetoresistance and phase separation in La1−xNaxMnO3 with 0.1≤x≤0.3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2943-2948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural, magnetic, and electronic properties of the polycrystalline La1−xNaxMnO3 (x=0.10, 0.15, 0.20, and 0.30) are investigated. The result of the Rietveld refinement of x-ray powder diffraction shows that these compounds crystallize in a rhombohedrally distorted structure with space group R3¯C. The magnetic measurement shows that Curie temperature TC of the studied samples is near or above room temperature. The temperature dependence of resistivity shows that all samples undergo a sharp transition accompanying a paramagnetic to ferromagnetic with the decrease of temperature, however, for x≥0.15 samples, double transition peaks with a single ferromagnetic transition is observed. In the meanwhile, a large room-temperature magnetoresistance with low applied magnetic field is observed. The co-existing ferromagnetic metallic phases and ferromagnetic insulating (FMI) phases induced by the electronic inhomogeneity as well as the additional FMI phases caused by the presence of vacancies at the A sites, are presented to account for the transport properties and large magnetoresistance in these compounds. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396823
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  • 80
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    Molecular dynamics simulation of stick-slip (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3090-3094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics simulation was carried out to investigate the stick-slip on an atomic scale by using the embedded atom method potential for Ni–Al. The analyses of the dynamic features of the atoms in the sliding block clearly show that the elastic deformation of the surface layers is the main cause for the stick-slip phenomenon, which is consistent with the macroscopic stick-slip. The simulation results also indicate that phonons are emitted during stick-slip, and a commensurate fit between the contacting surfaces is not significant for the stick-slip friction. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394916
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  • 81
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    Modified atomic force microscope applied to the measurement of elastic modulus for a single peptide molecule (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3095-3099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified atomic force microscopy (AFM) system, based on a force modulation technique, has been used to find an approximate value for the elastic modulus of a single peptide molecule directly from a mechanical test. For this purpose a self-assembled monolayer built from two kinds of peptides, reactive (able to anchor to the AFM tip) and nonreactive, was synthesized. In a typical experiment a single C3K30C (C=cysteine, K=lysine) peptide molecule was stretched between a Au(111) substrate and the gold-coated tip of an AFM cantilever to which it was attached via gold–sulfur bonds. The amplitude of the cantilever oscillations, due to an external force applied via a magnetic particle to the cantilever, was recorded by a lock-in amplifier and recalculated into stiffness of the stretched molecule. A longitudinal Young's modulus for the α-helix of a single peptide molecule and for the elongated state of this molecule has been estimated. The obtained values; 1.2±0.3 and 50±15 GPa, for the peptide α-helix and elongated peptide backbone, respectively, seem to be reasonable comparing them to the Young's modulus of protein crystals and linear organic polymers. We believe this research opens up a means by which scientists can perform quantitative studies of the elastic properties of single molecule, especially of biologically important polymers like peptides or DNA. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1397287
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  • 82
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    Energetics and effects of planar defects in CdTe (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3952-3955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation energies of planar defects such as lamellar twins and intrinsic and extrinsic stacking faults in CdTe are calculated using first-principles total-energy calculations. We find that the formation energies, 16 erg/cm2 for lamellar twins and 34 and 31 erg/cm2 for intrinsic and extrinsic stacking faults, are very small. This explains why high densities of planar defects are always present in the fast-grown CdTe thin films. The effects of the planar defects on the formations of important point defects in p-type CdTe are also investigated. We find that the planar defects have negligible effects on Cd vacancies and substitutional Cu, whereas they lower the formation energy of Te antisites by about 0.1 eV compared to the perfect regions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405138
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  • 83
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    Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3956-3964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed a series of data sets available from published literature for the temperature dependence of A and B exciton peak positions associated with the fundamental band gap of hexagonal GaN layers grown on sapphire. In this article, in contrast to preceding ones, we use the dispersion-related three-parameter formula Eg(T)=Eg(0)−(αaitch-theta/2)[(1+(π2/6)(2T/aitch-theta)2+(2T/aitch-theta)4)1/4−1], which is a very good approximation in particular for the transition region between the regimes of moderate and large dispersion. This formula is shown here to be well adapted to the dispersion regime frequently found in hexagonal GaN layers. By means of least-mean-square fittings we have estimated the limiting magnitudes of the slopes, S(T)≡−dEg(T)/dT, of the Eg(T) curves published by various experimental groups to be of order α≡S(∞)(approximate)(5.8±1.0)×10−4 eV/K. The effective phonon temperature has been found to be of order aitch-theta(approximate)(590±110) K, which corresponds to an ensemble-averaged magnitude of about 50 meV for the average phonon energy. The location of the latter within the energy gap between the low- and high-energy subsections of the phonon energy spectrum of h-GaN suggests that the weights of contributions made by both subbands to the limiting slope α are nearly the same. This explains the order of Δ(approximate)0.5–0.6 as being typical for the dispersion coefficient of the h-GaN layers under study. The inadequacies of both the Bose–Einstein model (corresponding to the limiting regime of vanishing dispersion Δ→0) and Varshni's ad hoc formula (corresponding to a physically unrealistic regime of excessively large dispersion Δ(approximate)1) are discussed. Unwarranted applications of these conventional models to numerical fittings, especially of unduly restricted data sets (T≤300 K), are identified as the main cause of the excessively large scatter of parameters quoted for h-GaN in various recent articles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402147
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  • 84
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    Time domain analysis of a rational harmonic mode locked ring fiber laser (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2143-2147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we present a theory of the pulse train generated by a rational harmonic mode locked ring fiber laser. The pulse width is calculated as a function of the rational harmonic order and the optical transfer function of the modulator. The theoretical work is based on a time domain analysis, which predicts that the pulse width decreases when the rational harmonic order goes up. The pulse width as a function of the modulation amplitude and bias level of the modulator was measured, and the experimental results agree with the theory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390304
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  • 85
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    Xerographic and electroabsorption study of primary photocarrier generation process in x-form metal-free phthalocyanine (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3984-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a dual-layered photoconductor, we have investigated the primary photocarrier generation process in x-form metal-free phthalocyanine (x-H2Pc) over a wide range of illumination wavelengths. According to the results of quantum efficiency measurements, it has been established that the photocarrier generation mechanism in x-H2Pc occurs via two processes: (i) production of an intermediate that depends solely on the excitation energy, and (ii) subsequent free carrier production in the presence of an electric field. In addition, the spectral quantum efficiency and the electroabsorption spectrum were measured and compared. Based on that, the primary process efficiency was divided into four regions in terms of photon energy, which explained well the relationship between them. The excitation energy dependence of the primary efficiency was semiquantitatively validated based on the electron transfer theory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403674
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  • 86
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    Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3993-3997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect and electrical resistivity of n-type CuInSe2 single crystals are measured between 4.2 and 300 K. Using a single conduction band model, the variation of the electron concentration with temperature above 100 K is explained in terms of the thermal activation of a shallow donor. The density of states effective mass me*=0.09me of the electrons, the activation energy of the donors around 7 meV, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by ionized impurities and acoustic and polar optical phonon modes. The adjustable parameters, thus obtained, are compared with those reported earlier. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the Hall coefficient with temperature between 300 and 40 K is explained. It is found that at the temperature where the Hall coefficient is maximum, the mobility in the impurity band is about 20% as compared to its value in the conduction band. The width of the impurity band is found to increase with increasing impurity concentration and the electron mobility below 20 K is explained by considering the effect of Mott-type variable range hopping conduction. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403666
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  • 87
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    Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3998-4006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory for the current noise associated with carrier generation and recombination in the space-charge region of p–n junctions is presented. We propose a noise model based on the response of the electric field to fluctuations of the trapped charge in this region, and make use of a collective transport-noise theory. The effects of the fluctuations of the space-charge region borders due to the fluctuations of the trapped charge are now taken into account. This new contribution is negligible when generation–recombination current governs the diode current. However, it is significant when diffusion current dominates, allowing the analytical study of generation–recombination noise to be extended to wider ranges of bias and temperature. Experimental results at low and high temperatures are explained with our theory. Empirical formulas of current noise density are also explained according to this complete theory of current noise calculation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403676
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  • 88
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    Tuning the hopping conductivity of WO3 films by ion bombardment at different temperatures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4007-4018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: WO3 films, either prepared by sputtering or evaporation under high or ultrahigh vacuum conditions, were irradiated with He+ and Ar+ ions (energy range 300–350 keV) at ambient and low temperatures (77–100 K). The resulting ion induced changes of the optical absorption as well as of the electrical conductivity could be determined on one and the same sample, which enables the variable range hopping (VRH) model to be tested under the assumption that the density of irradiation induced color centers is proportional to the electronic density of states contributing to the hopping conductivity. It is found that the data obtained at 300 K for He+ and Ar+ bombardment can be described within the VRH model by one common conductivity versus absorption curve, even though the effectiveness per projectile of the heavier ion for coloration as well as for increasing the conductivity is much higher. This is different at low temperatures. While the ion induced coloration is practically independent of the irradiation temperature for both projectiles, the effectiveness per projectile to enhance the conductivity is interchanged. This is attributed to the additional damage produced by the heavier ion at low temperatures resulting in strongly impeded hopping processes. Consistent with the VRH model, the temperature dependence of the conductivity of ion bombarded WO3 films follow the Mott "T−1/4" law, if the ion induced conductivity is not too high. For very high ion fluences clear deviations from the VRH model are observed for the conductivity versus absorption curves accompanied by a shift of the above power laws from T−1/4 towards T−1/2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380215
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  • 89
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    Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4027-4031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and selected area electron diffraction pattern (SADP) measurements were carried out to investigate the ordered structures near ZnTe/GaAs heterointerfaces, and Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) measurements were performed to determine the compositions of the ZnTe/GaAs interfacial layer. The SADP showed two sets of {〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12 〈fraction SHAPE="CASE"〉12} extra spots with symmetrical intensity, and the corresponding high-resolution TEM image showed doublet periodicity in contrast of the {111} lattice planes. The results of the SADP and the high-resolution TEM measurements showed that a CuPt-type ordered (Cd, Zn)Te structure was observed near the ZnTe/GaAs heterointerface, and the AES and SIMS results showed that the ordered structure was formed due to the diffusion of Cd atoms into the ZnTe layer. Two variants, one for each direction of the doublet periodicity on the {111} lattice, were observed in the ordering, and each variant had its own domain structure with a similar probability. The formation of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface originated from both the existence of the Cd residual impurities during the initial growth stage of the ZnTe epilayer and the strain relaxation of the ZnTe epilayer. These results can help to improve the understanding of the microstructural properties of the ZnTe/GaAs heterointerface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405820
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  • 90
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    Tunnel magnetoresistance and magnetic ordering in ion-beam sputtered Co80Fe20/Al2O3 discontinuous multilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4044-4048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Discontinuous multilayered Co80Fe20(t)/Al2O3(30 Å) thin films have been prepared by ion-beam sputtering. We report on structural, magnetic, and transport (for current in plane geometry) results obtained in this system. With growing nominal thickness t of the metal layers, which effectively characterizes the granular structure, a transition from tunnel to metallic conductance is observed, indicating the onset of infinite conducting paths at t〉18 Å. At t〈18 Å, that is within the range of tunnel regime, a different characteristic value t〉13 Å was detected from the magnetization data which display here a transition from superparamagnetic to ferromagnetic behavior. The measurements of tunnel magnetoresistance (MR) show that a sharp maximum of MR sensitivity to field takes place at this thickness, reaching ∼24%/kOe at room temperature. At least, MR itself as a function of t has a break at the same value. All these features suggest that some specific kind of percolation with respect to magnetic order occurs in our system when the disordered granular structure is still well separated, as confirmed by the data of high resolution transmission electron microscopy. Hence such magnetic percolation is clearly distinct from usual electrical percolation in these discontinuous layers. At the same time, the highest MR (∼6.5% at room temperature) in this series is attained with decreasing t only at t=10 Å. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399029
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  • 91
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    Mechanisms of noise increase in direct-coupled high Tc superconducting quantum interference device magnetometers exposed to magnetic fields (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4049-4055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the behavior of high-critical-temperature (high Tc) direct-coupled superconducting quantum interference device (SQUID) magnetometers in static and fluctuating magnetic fields. The magnetometers consist of narrow-linewidth superconducting films to prevent flux trap during field cooling. Moreover, they have no superconducting films crossing the bicrystal lines of the substrates (except at the Josephson junctions); i.e., they have no flux dams. When one of these magnetometers was cooled in a static magnetic field Bcool, the low-frequency noise when Bcool〈100 μT was as low as that under zero-field cooling, but above 100 μT the noise increased substantially. On the other hand, when a field Bext of less than 4 μT was applied after zero-field cooling, the low-frequency noise increased in proportion to Bext. It returned to its original value reversibly when Bext was turned off. However, when Bext was greater than or equal to 4 μT, the output of the flux-locked-loop started to drift with time and the low-frequency noise increased further. This additional noise increase remained after turning off Bext. These results suggested that there are two modes of increase for the low-frequency noise induced by flux penetration due to the shielding current: a "reversible" mode and an "irreversible" mode. We found that the low-frequency noises of the two modes were additive with respect to their power, suggesting that the two noises derived from independent sources at different sites on the magnetometer. We also found that the reversible-mode noise could be reduced by improving the profile of the film edge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403680
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  • 92
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    Strong unidirectional anisotropy in mechanically alloyed spinel ferrites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4078-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cluster glass and relatively high coercivity at low temperatures were found in disordered ultrafine nickel ferrite powders. High-energy mechanical milling of spinel NiFe2O4 led to formation of a wüstitelike structure. Our investigation suggested that ferrimagnetic clusters formed in an antiferromagnetic matrix. The strong ferri/antiferromagnetic exchange coupling resulted in a strong unidirectional anisotropy and a coercivity of over 10 kOe at 4.2 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405834
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  • 93
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    Enhancement of magnetic surface anisotropy of Pd/Co/Pd trilayers by the addition of Sm (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4085-4088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of Sm on the magnetic surface anisotropy (MSA) of Pd/Co100−xSmx/Pd (111) trilayers, where Sm content x was varied from 0 to 11. All samples show perpendicular anisotropy due to the strong MSA at the interfaces. The MSA significantly increases with x and attains a maximum value of 0.60 erg/cm2 at x(similar, equals)8.3, which is 36% larger than that of pure Co (x=0). The volume term of the magnetic anisotropy shows a similar behavior as the MSA. The appreciable increase in MSA is considered to be due to the enhancement of orbital moment of Co by the addition of Sm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405817
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  • 94
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    Domain formation in epitaxial Pb(Zr, Ti)O3 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4095-4102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric twin-domain structures in epitaxial Pb(Zr, Ti)O3 (PZT) thin films grown on various single-crystal substrates such as MgO(001), KTaO3(001), and SrTiO3(001) were investigated by two-dimensional reciprocal space mapping using synchrotron x-ray diffraction. Each system showed a characteristic domain structure. PbTiO3 thin films grown on MgO(001) showed highly c-axis oriented domain structures consisting of a periodic array of 90° twinlike domains. Perfectly c-axis oriented films were obtained on SrTiO3(001), while the films grown on KTaO3(001) showed a-domain dominant structures with a small amount of c domains embedded in matrix a domains. Contributions of net elastic strain stored in each heteroepitaxial layer and its relaxation to the final domain structures were evaluated considering thermodynamic equilibrium relief of coherency strain by misfit dislocation generation at the film growth temperature. A comparison between theoretical consideration and experimental results clearly demonstrates that the nature of effective misfit strain and its relaxation during film growth play a critical role in the formation of domain structures in epitaxial PZT thin films. Moreover, it was verified that the control of such critical strain factors by changing film composition could modify dominant domain structures in a drastic way. In addition, it was found that the crystalline quality of the films is closely correlated to the tilting nature of the domain structure in each system and coherency strain across the 90° domain boundary is accommodated mainly by the domain tilt of the minor domain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404424
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  • 95
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    Relaxation effect of electron inertial delay in an ion-beam plasma system (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3200-3204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article an interesting result has been reported to highlight the physical implication of finite nonzero electron inertial delay in acoustic oscillations of an ion-beam plasma system. A simple fluid model has been used to demonstrate the excitation of relaxation type resonant instability on the electron inertial delay time scale. Physical arguments have been included to understand and explain the driving mechanism of the instability and its utility to comprehend the ion-beam driven oscillations in plasma sheath experiments. The physical nature and origin of the potential relaxation instability has been correlated to the electron inertial delay effect in the ion current carrying plasma system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1397284
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  • 96
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    Effect of Ar addition to an O2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O2/Ar mixture plasma modeling and photoresist etching (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3205-3211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of Ar addition to an O2 plasma on photoresist etching in an inductively coupled, traveling wave driven, large area plasma source (LAPS). We also develop a simplified spatially varying O2/Ar mixture discharge model corresponding to the LAPS in a two-dimensional geometry in order to account for the effect of Ar addition. A photoresist etch kinetics model and spatially varying O2/Ar mixture discharge model are used to explain the experimental data. We find that the addition of 50% Ar increases the plasma density and etch rate approximately by a factor of 2. From the simulation we find that argon metastables (Ar*) play an important role in the mixture plasma. The simulation predicts an enhancement in O-atom density due to Ar addition, even in the presence of dilution of the feed gas. The experimental data and predicted etch rates from the simulation are generally in good agreement, indicating that the increase in the etch rate with Ar addition is due to both the increase in the plasma density and the enhancement in O-atom density attributable to the dissociation of O2 by Ar*. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398600
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  • 97
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    Single-gap pseudospark discharge experiments (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3212-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental investigation of a single-gap pseudospark was conducted using a flexible discharge chamber. The voltage breakdown characteristics were studied against a wide range of parameters such as gas pressure, gap separation, cathode cavity depth, cathode aperture size, external capacitance and applied voltage. An empirical formula, VB=(0.20±0.05) p−4.02±0.18 d−1.77±0.01, was obtained for the breakdown voltage VB in kV, given the gas pressure p in Torr and the gap separation d in mm. The electron beam extracted from this single gap was also studied and a current of up to 100 A was measured at 10 kV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398065
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  • 98
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    Thermal evolution of the magnetization in nanocrystalline Fe particles investigated by electron holography (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4152-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micrometric, irregularly shaped Fe particles with a nanocrystalline structure have been prepared by mechanical attrition through ball-milling. Electron holography has been employed to visualize the stray field emerging from isolated Fe particles, both at 300 K and at selected temperatures T≤1200 K, from which indirect information on the magnetic domain configuration has been inferred. By complementary x-ray diffraction and transmission electron microscopy investigations a relationship has been established between the changes of the leakage field and of the microstructure upon annealing: it indicates that the structural evolution is accompanied by strong modifications in the interior magnetization pattern. This relationship finds explanation in the framework of the random anisotropy model, including temperature-induced reversible variations in the exchange correlation length and saturation magnetization. Moreover, the role played by the overall geometrical features of the particles in the determination of the actual domain configuration has been investigated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1401797
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  • 99
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    (Fe–Co)–(Mg-fluoride) insulating nanogranular system with enhanced tunnel-type giant magnetoresistance (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4159-4162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Insulating nanogranular-type tunnel magnetoresistive thin films made of (Fe or Fe–Co)–(Mg-fluoride) have been investigated. The films were prepared by a tandem deposition method, using Fe, Co, or Fe+Co metal and MgF2 insulator targets. The granular structure was found to consist of Fe or Fe–Co based nanogranules surrounded by thin intergranules of Mg based fluoride with the MgF2 crystal structure. A magnetoresistance value of 13.3% at room temperature and 10 kOe, the largest values ever reported, were obtained at the compositions of 32 vol %(Fe0.51Co0.49)–(Mg–F). To increase the magnetic field sensitivity of the magnetoresistance, a granular-in-gap film consisting of an (Fe–Co)–(Mg–F) granular thin film filling a narrow gap in a soft magnetic Permalloy thin film was prepared. A remarkably high magnetoresistance of 4% or more at 1–2 Oe was obtained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376415
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  • 100
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    Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4175-4183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we present a detailed structural characterization by Raman spectroscopy of hydrogenated amorphous silicon (a-Si:H) and of nanostructured silicon (ns-Si:H) thin films grown in radio-frequency plasma. The ns-Si:H thin films, also called polymorphous Si thin films, consist of a two-phase mixture of amorphous and ordered Si. The Raman spectra were measured at increasing laser intensities. Very low laser power densities (∼1 kW/cm2) were used to thoroughly analyze the structure of as-deposited thin films. Higher Raman laser powers were found to induce the crystallization of the films, which was characterized by the appearance of a sharp peak around 500 cm−1. This was attained faster in the ns-Si:H than in the conventional a-Si:H thin films because the silicon-ordered particles cause a heterogeneous nucleation process in which they act as seeds for crystallization. The laser power densities for film crystallization, crystal size, and surface temperature were determined from this Raman analysis. The validity and application ranges of the different models that can be used to calculate these parameters are critically discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398601
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