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  • Electronic Resource  (48)
  • 1995-1999  (34)
  • 1990-1994  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Field-ion scanning tunneling microscopy study of the atomic structure of 6H–SiC(0001) surfaces cleaned by in situ Si molecular beam etching (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2524-2526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field ion-scanning tunneling microscopy has been used to study 6H–SiC(0001) surfaces with Si adlayers on the Si-terminated surface, formed by in situ Si molecular beam etching at 950 °C. The as-cleaned surface showed a ((square root of 3)×(square root of 3)) reconstruction. The (2×3), (2(square root of 3)×6(square root of)6), and (3×3) phases were formed by evaporating Si on this clean 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface. A Si(111) film 6 monolayers thick was also epitaxially grown on the 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface at 800 °C, and the surface exhibited the Si(111)–(7×7) reconstruction. A surface vacancy model for the ((square root of 3)×(square root of 3)) reconstruction is proposed, and a possible application of utilizing the various surface reconstructions to control the growth of different polytypes of SiC on the 6H–SiC substrate is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363037
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  • 2
    Electronic Resource
    Electronic Resource
    Charge-exchange neutral particle measurements on electron cyclotron resonance heating experiments in hot-ion-mode plasmas of the GAMMA 10 tandem mirror : Proceedings of the 12th topical conference on high temperature plasma diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 849-852 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Charge-exchange (C–X) neutral particle measurements have been carried out in hot-ion-mode plasmas of the GAMMA 10 tandem mirror. In the present experiment, a microwave power of 40 kW in 28 GHz is injected toward a second harmonic ECR layer located in the vicinity of the ICR layer at the central region and the radial profiles of ion temperatures determined from the energy spectrum of the C–X neutrals by using a neutral particle energy analyzer (NPA) are investigated from the viewpoint of ion energy balance. At the onset of the ECRH pulse, a remarkable increase of C–X neutral flux with high energy (few keV to few tens keV) is observed with NPA and the resultant ion temperature on the plasma axis is found to increase from 2.5 to 5.0 keV at the electron line density of 3×1013 cm−2. Based on the measured plasma parameters, radial profiles of ion-energy losses due to classical processes are evaluated and ECRH in the central region is confirmed to reduce the energy loss due to electron drag significantly in the core-plasma region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149287
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  • 3
    Electronic Resource
    Electronic Resource
    Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2995-2997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ∼75 μm/h along 〈100〉 and ∼20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current–voltage characteristic resulted from the defect-assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114930
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2265-2267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flat GaAs(113) surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121273
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  • 5
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the preliminary results on self-formed GaAs islands grown on the GaAs/Si substrate by metalorganic chemical vapor deposition using droplet epitaxy. Atomic force microscope observation shows that the GaAs islands exhibit a conical shape with heights of 90–170 nm, diameters of 600–750 nm, and densities of 107 cm−2, which are controlled by the trimethylgallium flow rate. In addition, an AlGaAs/GaAs light-emitting diode (LED) on Si with a self-formed GaAs island active region was fabricated by the use of this technique. The LED was operated up to 27 μW at 190 mA under direct current conditions at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116387
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  • 6
    Electronic Resource
    Electronic Resource
    Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular beam epitaxy. Its surface exhibits a typical terrace-plus-step morphology, which enables us to study various GaN(0001) surface superstructures and hollow-core defects with atomic resolution by scanning tunneling microscopy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123883
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of surface polarity on gallium adsorption on 6H-SiC surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2776-2778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed the first scanning tunneling microscopy (STM) study of gallium adsorption on both the Si-terminated 6H-SiC(0001) ((square root of 3)×(square root of 3)) and C-terminated 6H-SiC(0001¯) (2(square root of 3)×2(square root of 3)) surfaces. The structure of the Ga terminated 6H-SiC surface showed strong polarity dependence. On the Si-terminated (square root of 3)×(square root of 3) surface, parallel rows of Ga atoms arranged in three different domains oriented at 120° with respect to each other at 1 ML coverage were observed. On the C-terminated 2(square root of 3)×2(square root of 3) surface, sets of two concentric rings formed an overall 4(square root of 3)×4(square root of 3) reconstruction at 1 ML coverage. We propose a structural model for the 4(square root of 3)×4(square root of 3) structure which explains the STM image. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120130
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and electrical degradations of GaAs-based laser diodes grown on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1401-1403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs-based laser diode grown on a Si-substrate suffers from degradation, which results from the deterioration of electrical and optical characteristics. An initial deterioration of a p-n junction is observed in a reverse current-voltage (I-V) characteristic, and becomes ohmic-like under a higher ambient temperature and a larger forward current. Electroluminescence observation shows that the optical deterioration is caused by the growth of dark spot regions, which act as nonradiative recombination regions. The deterioration of the I-V characteristic is probably due to defect-accelerated impurity diffusion because the growth of GaAs/Si involves a high dislocation density, a large tensile stress and a large amount of Si near the GaAs/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111896
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  • 9
    Electronic Resource
    Electronic Resource
    Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3668-3670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125423
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  • 10
    Electronic Resource
    Electronic Resource
    Morphological Characterization of Three Phenotypes of the Isopod Armadillidium vulgare (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Periodontology 2000 7 (1994), S. 0 
    Details
    ISSN: 1600-0757
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The morphological characteristics and ommochrome quantity in the integument of red, white, and wild type (black-grey) Armadillidium vulgare were studied. The red phenotype was found to possess two kinds of immature ommochrome pigment granules within its pigment cells, in addition to mature pigment granules. The immature granules seemed to contain uniformly distributed fibrilles, or to have an electron-dense central region surrounded by an electron-lucent outer edge. Since these immature pigment granules were typically observed to be distributed along with the mature ones, and were also more easily extractable than the wild type's, it is hypothesized that ommochrome granule maturation in the red phenotype may occur slowly due to a defect in the pigment granule internal process which combines pigments with matrix proteins. Regarding the white phenotype, although its pigment cells were undeveloped, several large-sized vesicles containing a small amount of electron-dense material appeared in the pigment cell cytoplasm. The wild and red type males of A. vulgare were found to have an ommochrome content twice as large as that of the corresponding females, with no ommochrome pigment being detected in the white phenotype. The genetic relationship between the white and red phenotypes was discussed using as a basis the observed pigment granule structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0749.1994.tb00047.x
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