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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 617-625 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: RELAX is a resonance ionization, time-of-flight mass spectrometer to which a cryogenic sample concentrator has been added. This has resulted in an increase in sensitivity by a factor greater than 100. The sample concentrator consists of a localized cold spot in the ion source, onto which the sample condenses, and a heating laser to release the condensed sample into the ionization region. The lifetime against detection of a sample atom is close to 20 min, which corresponds to a count rate of 1 cps from a sample of 1000 atoms, while the mass resolution is 300 (10% peak height). Sensitivity depends on the return time of sample atoms to the cold spot (10 s) and the fraction of these atoms subsequently ionized (∼1%). The minimum sample size which can be measured is limited only by blank, which is currently 2×10−15 cc STP total xenon and isotopically atmospheric (this can be attributed to the large aliquots of xenon admitted to the instrument during development, and so may be expected to decrease with time). The precision of abundance measurements has been improved by the incorporation of pulse height discrimination and pulse counting detection for the less abundant isotopes. The design, construction, and operation of the spectrometer in its new configuration are described with particular attention to abundance extraction. The effects of the sample concentrator on ionization efficiency and discrimination are discussed in detail, as are interferences from nonresonantly ionized hydrocarbons and the means of accounting for them.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3611-3618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of current, voltage, and magnetic field on the radial profile of ions sputtering a flat cathode has been studied in a hollow cathode enhanced magnetron discharge. The measurements of sputtering rate were made using a directional quartz crystal microbalance, translated parallel to the cathode. We find the radial sputtering profiles are determined by the plasma sheath thickness, which can be calculated using the Child–Langmuir law for collisionless space-charge limited current flow. A hollow cathode electron source was used to control the sheath thickness by increasing the current to the magnetron cathode at a given voltage and constant pressure (0.07 Pa). Uniformity of the radial profiles increases with decreasing sheath thickness (i.e., at lower voltages and higher current densities). The angular distribution of sputtered atoms was measured by changing the polar angle of the microbalance. The angular distributions are asymmetric on either side of the radial position where the ion current density to the cathode is maximum. We believe this is due to ions which impact the cathode at angles up to ≈10° from the normal, having been radially accelerated away from the position of maximum plasma density.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 152-154 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode-array-pumped GaInAsSb/GaSb and InAsSb/GaSb double heterostructure lasers operated at 85 K yielded 95 mW average and 1.5 W peak power per facet at 3 μm, and 50 mW average and 0.8 W peak power facet at 4 μm. The highest operational temperature was 210 K for the 3-μm quaternary and 150 K for the 4-μm ternary.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2474-2476 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at 3 μm have exhibited pulsed operation at temperatures up to 255 K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AlGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/cm2 obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3153-3155 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity-dependent photoconductive response to 2.06 μm excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85Sb0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3543-3545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained quantum-well lasers emitting at 4.5 μm have been fabricated. The laser structure, grown on a GaSb substrate by molecular beam epitaxy, consists of compressively strained InAsSb active layers and tensile-strained InAlAs barrier layers, surrounded by AlAsSb cladding layers. Under electrical injection, the laser exhibited pulsed operation up to 85 K, with threshold current density of 350 A/cm2 at 50 K. Under optical pumping, the laser operated pulsed up to 144 K, with peak power at 95 K of 0.54 W. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2936-2938 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum-well diode lasers incorporating compressively strained InAs0.935Sb0.065 wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm2 at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 876-878 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3758-3760 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large increase in the quantum efficiency (QE) and open-circuit voltage Voc of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaSb substrates by organometallic vapor phase epitaxy or molecular beam epitaxy, consists of a 1-μm-thick n-GaInAsSb base layer, a 3-μm-thick p-GaInAsSb emitter layer, a 100-nm-thick AlGaAsSb window layer, and a 25-nm-thick GaSb contacting layer. The band-gap energy of the lattice-matched GaInAsSb is 0.53–0.55 eV. The peak internal QE of the TPV cells with the window is 〉90%, compared with less than 60% for those without the window. At a short-circuit current density of ∼1000 mA/cm2, Voc of ∼300 meV is obtained for cells with the window layer, compared with less than 220 meV without the window layer. These increases are attributed to a substantial decrease in the surface recombination velocity with the window layer. Based on a standard calculation, the electron diffusion length in the p-GaInAsSb layer is at least 5 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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