ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel ridge waveguide semiconductor laser diode is introduced, which contains a single depressed-index cladding layer. Deployment of this layer significantly reduces the transverse beam divergence, while maintaining reasonable values for the optical confinement factor, Γ, and the lateral index step. For lasers with 500 A(ring) active layers and ridge widths of 4 μm, we measured transverse and lateral far-field beam divergences of 16.4° and 8.2°, respectively, and threshold currents of 67 mA for 500-μm-long devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108717
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