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  • 11
    Electronic Resource
    Electronic Resource
    Native point defects in low-temperature-grown GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 279-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present structural and electronic data which indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (AsGa) and Ga vacancies (VGa), with negligible amounts of As interstitials (Asi). We show that the change of lattice parameter correlates with the concentration of AsGa, and that AsGa alone can account for the lattice expansion. We also show that the total concentration of AsGa has a characteristic second power dependence on the concentration of AsGa in the positive charge state for the material grown at different temperatures. This can be understood provided that VGa defects are the acceptors responsible for the carrier compensation. Our results are consistent with most experimental results and the theoretical expectation from the calculation of defect formation energies. We find that the conclusion may also be true in As-rich bulk GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114782
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  • 12
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three-dimensional to two-dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104975
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  • 13
    Electronic Resource
    Electronic Resource
    Polish-induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4363-4365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344928
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  • 14
    Electronic Resource
    Electronic Resource
    Chemical and structural transformation of sapphire (Al2O3) surface by plasma source nitridation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7909-7913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical, morphological, and structural characteristics of nitrogen plasma treated c-plane sapphire substrate surfaces were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The plasma treatment was carried out by exposing sapphire substrates (Ts=700 °C) to a flow of 35 sccm of activated nitrogen species generated by a constricted-plasma source for 5–60 min. The emergence of the N 1s peak in XPS indicates nitrogen incorporation in sapphire as soon as after 5 min of nitridation. AFM images show that the sapphire contained a high density of islands after 1 h of nitridation. A thin polycrystalline AlN layer was observed on the nitridated sapphire surface by TEM. Both the thickness of the AlN layer and the N 1s photoelectron peak intensity increase nonlinearly with respect to nitridation time. The nonlinear relationship between the thickness of the nitridated layer and the reaction time suggests the growth of the AlN layer follows a diffusion limited growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370606
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  • 15
    Electronic Resource
    Electronic Resource
    Determination of parameters of deep level defects from numerical fit of deep level transient spectroscopy spectra: Analysis of accuracy and sensitivity to noise (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 244-250 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The numerical fit of deep level transient spectroscopy (DLTS) spectra, used primarily to analyze complex DLTS spectra, is evaluated in terms of the accuracy of measuring deep levels and the sensitivity to noise. It is shown that by using numerical fit of DLTS spectra, the uncertainties in the emission activation energy and the capture cross section of deep level defects can be improved by three to four times over the standard Arrhenius plot method. Two modifications of the fitting procedure are tested: a fit of a DLTS spectrum using one rate window, and a simultaneous fit using five different rate windows. It is shown that simultaneous fit of spectra using different rate windows is significantly more accurate, has noticeably larger convergence radius for the initial values of parameters, and is less sensitive to noise. The advantages of the fitting routine are demonstrated on experimentally obtained noisy DLTS spectra. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148503
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  • 16
    Electronic Resource
    Electronic Resource
    Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2441-2446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heteroepitaxial growth of GaAs on Si substrates at 700 °C using AlxGa1−xP buffer layers grown at 900 °C by metalorganic chemical vapor deposition is studied using transmission electron microscopy. This GaAs/AlxGa1−xP/Si system is unique in that it allows one to study separately the influence of lattice-mismatch (GaAs/AlxGa1−xP) and polar/nonpolar (AlxGa1−xP/Si) effects on the heteroepitaxial growth of compound semiconductors. Island-type nucleation is observed for both effects acting independently, though three-dimensional growth due to the polar/nonpolar effect (AlxGa1−xP/Si) can be suppressed by increasing the Al content (x〉0.2) of the AlxGa1−xP layers. The nucleation of the GaAs appears to be modified by the nature of the AlxGa1−xP buffer layers, i.e., whether they are in the form of islands or planar layers. Single-crystal, 3-μm-thick layers of GaAs can be grown directly at 700 °C on the AlxGa1−xP buffer layers without resorting to a two-step technique. This result demonstrates that purely lattice-mismatch or polar/nonpolar effects cannot disrupt the crystallinity of the compound semiconductor layer. The surface morphology as well as the nature of defects generated in the 3-μm-thick GaAs films can be correlated to the nucleation mode of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345490
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  • 17
    Electronic Resource
    Electronic Resource
    Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2006-2010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report we show that the application of a large voltage and current stress can significantly change the barrier height of a given metal (Ag,Al,Au,Pd,Cr)/GaAs(110) contact. These changes of barrier height depend on the metal used, the method of fabrication of the diode (air exposed or UHV cleaved), and the intensity and direction of the potential and current during the electrical aging. In particular, the air-exposed Ag diodes exhibit the largest change in the barrier height (∼85 meV) upon aging, while the UHV-cleaved Ag diodes do not exhibit a significant change. In the case of Au, both UHV-cleaved and air-exposed diodes show a small change (∼20 meV). The barrier heights of Pd, Al, and Cr air-exposed diodes do not exhibit an appreciable change upon aging (i.e., 〈10 meV). The changes in barrier height are found to have a very consistent and characteristic logarithmic dependence upon time. Once the electrical aging is stopped, the barrier height is found to recover to near the unaged value. The long time constant of the aging process, the ability of the barrier height to recover after aging, the long time constant of the recovery process, and the acceleration of the recovery process by illumination suggest that the changes in the barrier height which occur upon electrical aging are due to the creation and/or annihilation of deep level traps near the interface. We also report a systematic study of a comparison of barrier height determinations for Ag, Al, Au, Cr, and Pd diodes formed on air-exposed and UHV-cleaved GaAs(110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341178
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  • 18
    Electronic Resource
    Electronic Resource
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102232
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  • 19
    Electronic Resource
    Electronic Resource
    Lattice relaxation of pressure-induced deep centers in GaAs:Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep centers induced by hydrostatic pressure in GaAs:Si have been studied by deep level transient spectroscopy and constant temperature capacitance transient techniques. The capture behavior of these centers has been studied in detail and found to be consistent with the multiphonon emission theory. The pressure coefficients of the ionization energy and the barrier height are consistent with the large lattice relaxation model proposed by D. V. Lang and R. A. Logan [Phys. Rev. Lett. 39, 635 (1977)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98437
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  • 20
    Electronic Resource
    Electronic Resource
    Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 713-717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Ham's law in various forms to analyze precipitate site density is discussed. Ham's law is also applied to situations where the site density is of the same order as the solute concentration. While the results are general, this analysis uses iron precipitation and iron-boron pairing in silicon as example systems. The results of Ham's paper are reviewed and several implementations of Ham's Law are compared and fitted to experimental data. Iron-boron pairing is described using Ham's law and a capture radius of the boron of 6 nm is obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368127
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