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  • 21
    Electronic Resource
    Electronic Resource
    Photoluminescence study of high quality InGaN–GaN single heterojunctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 668-670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117800
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  • 22
    Electronic Resource
    Electronic Resource
    Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2418-2420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117656
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  • 23
    Electronic Resource
    Electronic Resource
    Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 337-339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaN by metalorganic chemical vapor deposition on (111) and (100) magnesium aluminate (MgAl2O4) substrates is examined using transmission electron microscopy. The results indicate that mainly wurtzite GaN is grown for both orientations. On the (111) substrate the following epitaxial relationship is observed: (0001)GaN (parallel) (111)MgAl2O4, and [112¯0]GaN (parallel) [11¯0]MgAl2O4. During the early stages of the (100) growth, four orientations of the wurtzite phase and a zinc-blende phase are formed. With increasing thickness, one of the wurtzite orientations dominates, with the epitaxial relationship being (11¯01)GaN (parallel) (100)MgAl2O4 and the [112¯0]GaN nearly parallel to [011]MgAl2O4. This choice of growth orientation appears to be determined primarily by the nature of the interfacial bonding, with the basal plane of each of the four wurtzite GaN variants being nearly aligned along one of the four {111} planes intersecting the (100) surface of the MgAl2O4. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116708
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  • 24
    Electronic Resource
    Electronic Resource
    Piezoresistive effect in GaN–AlN–GaN structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3817-3819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a high sensitivity of GaN–AlN–GaN semiconductor–insulator–semiconductor structures grown on sapphire to an applied strain. The measured static gauge factor (GF) is almost twice as large as the GF for n-type SiC films. We link the observed magnitude and sign of the gauge factor to the crystalline structure of the GaN and AlN films and to their piezoelectric constants. We show that even higher sensitivity can be achieved if the material and interface quality is improved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120514
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  • 25
    Electronic Resource
    Electronic Resource
    Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 514-516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116384
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  • 26
    Electronic Resource
    Electronic Resource
    Bias-assisted photoelectrochemical oxidation of n-GaN in H2O (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498863
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  • 27
    Electronic Resource
    Electronic Resource
    Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2343-2345 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A "pulsed metalorganic chemical vapor deposition" technique has been developed for lateral overgrowth of GaN thin films on SiC with conducting buffer layers for vertically conducting devices. Growth was carried out at temperatures as low as 950 °C keeping a constant gallium flux while pulsing NH3. We demonstrate that, by varying the NH3 pulse duration, growth morphology can be gradually changed from triangular to rectangular for the lateral overgrowth. Even at a V/III ratio as low as 550, high quality smooth layers with (11¯00) vertical facets were successfully grown with a lateral to vertical growth rate ratio as high as 4:1. Atomic force microscopic measurements show the root-mean-square roughness of the laterally overgrown layers to be 7.0 Å. Scanning thermal microscopy was used to measure a thermal conductivity of 1.7 and 1.5 W/cm K, respectively, for the laterally overgrown film and the GaN deposition in the window region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316063
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  • 28
    Electronic Resource
    Electronic Resource
    SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 863-865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a transparent Schottky-barrier ultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306647
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  • 29
    Electronic Resource
    Electronic Resource
    Lattice and energy band engineering in AlInGaN/GaN heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaN heterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in AlInGaN/GaN heterostructures strongly affect the transport properties of the two-dimensional electron gas at the heterointerface. The obtained results demonstrate the potential of strain energy band engineering for GaN-based electronic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125970
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  • 30
    Electronic Resource
    Electronic Resource
    High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes (LEDs). The obtained data indicate the recombination in p–n junction space charge region to be responsible for a current transport in LED structures with quaternary quantum wells. This is in contrast to InGaN based LEDs, where carrier tunneling dominates either because of high doping of the active layer or due to the high density of localized states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331084
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