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  • 1
    Electronic Resource
    Electronic Resource
    Optical and transport properties of single quantum well infrared photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1826-1831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed an extensive series of measurements on symmetrical barrier bound-to-continuum and asymmetrical barrier bound-to-bound quantum well infrared photodetectors consisting of only a single well. We find that the behavior of the optical (e.g., responsivity) and transport properties (e.g., gain) as a function of bias is strikingly different from that of the usual multi-quantum well detectors. The simplicity of the structure has allowed an accurate theoretical calculation of the potential drops across each barrier, the photoinduced carrier depletion in the quantum well and therefore a detailed understanding of the device physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354789
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  • 2
    Electronic Resource
    Electronic Resource
    Tunneling emitter undoped quantum-well infrared photodetector (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 346-350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extensive series of measurements and theoretical analysis are presented on an undoped single-quantum-well infrared photodetector. The well is filled by electron tunneling through the thin emitter barrier resulting in several novel characteristics compared with the usual directly well-doped detectors. These include a unity optical gain and a dramatic drop in the well carrier density (and responsivity) at high bias when the bound state in the well drops below the emitter conduction-band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354115
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4429-4443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasicontinuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path, net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352210
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon-doped impurity induced layer disorder 0.98 μm lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high power carbon-doped InGaAs/AlGaAs lasers using an impurity-induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other p-type dopants, thereby avoiding displacement of the p-n junction, even at the high temperatures and long diffusion times required by the disordering process. Secondary ion mass spectrometry (SIMS) measurements before and after Si diffusion show the p-n junction position to be unchanged during processing. The carbon was introduced using CCl4 as an extrinsic precursor, giving improved control over doping levels and ternary growth conditions that is not available with intrinsic carbon doping. Thresholds of 20 mA and slope efficiencies of 0.44 mW/mA at 25 °C were obtained for lasers with cavity lengths of 500 μm and coated facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357048
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  • 5
    Electronic Resource
    Electronic Resource
    High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1855-1857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H+ implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-μm-diam emitting windows, ∼4 mA thresholds with continuous-wave (cw) room-temperature output powers (approximately-greater-than)1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104038
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma-induced damage in AlGaAs/GaAs/AlGaAs single quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1256-1258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in cathodoluminescence (CL) intensity from a buried single AlGaAs/GaAs/AlGaAs quantum well (QW) as a result of exposure to electron cyclotron resonance (ECR) hydrogen or argon discharges are reported. For additional dc biases of 150 V on the sample during either H2 or Ar plasma exposure, we observe substantial decreases in CL intensity from the well. Ar+ ion bombardment creates damage more resistant to annealing than does H+ ion bombardment at the same energy. The ECR discharges alone with zero additional dc bias cause degradation in the well luminescence due possibly to defects created by energetic electron bombardment or ultraviolet illumination. At intermediate bias voltages (50 V) strong hydrogen passivation of nonradiative centers is observed, leading to 500% increases in CL intensity from the well. The initial characteristics of the QW under these conditions are restored by annealing at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104328
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2928-2930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm−3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103733
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  • 8
    Electronic Resource
    Electronic Resource
    Changes in the electronic properties of bulk GaAs by thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1472-1474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk GaAs grown by the Bridgman technique changes its electronic properties in response to heat treatment. These changes were studied by deep level transient spectroscopy, photoluminescence, and Hall effect measurements. We report the dependence of the conductivity changes on starting material composition, annealing temperature, and annealing duration. The changes are related to the stability of a shallow acceptor which is present in concentrations ≥1016 cm−3 and reflect the equilibration of native defects introduced during the crystal growth process. The implication of this study is that as-grown GaAs is a metastable material with its ultimate electrical properties being determined by process conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99102
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  • 9
    Electronic Resource
    Electronic Resource
    Interstitial defect reactions in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 256-258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The Cs-Ci, ME[(0.10), (0.17)] and Ps-Ci, ME[(0.21), (0.23), (0.27), (0.30)] defects exhibit metastable structural transformations. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98465
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of metastable SnGe alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 578-579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown homogeneous alloys of Sn1−xGex with 0.01〈x〈0.1 by molecular beam epitaxy on 〈100〉 InSb substrates. The Sn-Ge system is immiscible due to differing equilibrium crystal structures at the growth temperature. By stabilizing the diamond cubic α-Sn with the InSb template, we have created a metastable miscibility region for alloying Sn and Ge. Pure α-Sn grown on 〈100〉 InSb shows a tetragonal expansion perpendicular to the substrate because of the slightly larger lattice parameter of α-Sn. As the smaller Ge atom is added, the strain converts from compressive to tension resulting in an effective 1.66% tetragonal contraction in the growth direction for Sn0.92Ge0.08.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101838
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