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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1862-1867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect energy levels in metalorganic chemical vapor deposition (MOCVD) grown GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S epilayers (x≤0.24) have been studied by photoluminescence (PL) and photoconductivity (PC) measurements. To understand the origin of the observed deep levels, we have determined the temperature dependence of the intensity and half-width of the dominant deep-level PL peaks. We find that (1) the dominant deep-level peaks of the samples grown on the same substrate are related to the epilayer composition, and move to higher energies with increasing gallium content; (2) the dominant deep-level peaks of the samples with the same epilayer composition grown on different substrates are different. They are attributed to the impurity in the substrate diffusing into the epilayer during MOCVD growth, forming an impurity-vacancy complex. The following tentative assignments are proposed: the dominant deep-level peaks in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S are attributed to the emission of a (V)P-(Fe)III complex and a (V)III-(S)P complex, respectively. Comparing the deep level with the near-band-edge emission we show that (1) all deep levels are independent of the band edge as x is varied; (2) the composition dependences of the deep levels associated with such complexes depend on the site occupied by the impurity atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354794
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and properties of high-Tc YBa2Cu3O7−y oriented thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3493-3497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a- and c-axis-oriented YBa2Cu3O7−y thin films were prepared by rf magnetron sputtering technique. The characterization of the thin films was carried out by inductively coupled plasma atomic emission spectroscopy, x-ray diffraction, and scanning Auger profile techniques. The Tc, Tc(H), Jc(H), and Hc2 -T(near Tc) were measured by the standard dc four-probe method. It was found that very strong anisotropy of this material was manifested in its superconducting properties, especially for c-axis-oriented thin films. It was also found that Jc depends very strongly upon stoichiometric composition 123, preferential orientation of the film, and the characteristic of the film-substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346360
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351640
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  • 5
    Electronic Resource
    Electronic Resource
    Critical current and flux pinning near Tc of a YBa2Cu3O7 thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349400
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  • 6
    Electronic Resource
    Electronic Resource
    Critical current measurements in YBa2Cu3O7−x thin film grown on LaAlO3 substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 884-886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current density Jc(B,T) of epitaxial YBa2Cu3O7−x (YBCO) thin films on LaAlO3 was measured under different applied magnetic fields (0–7 T) with the temperature ranging from 65 to 79 K. At 65 K, the zero-field critical current density of the best film was 5.8×106 A/cm2; even at magnetic fields up to 7 T, Jc could reach as high as 1×106 A/cm2. Strong anisotropy was observed at 79 K. The anisotropy behavior diminished with the decrease of temperature. Experimental results showed that Jc was proportional to (Tc−T)3/2 ; this was in accordance with the theoretical explanation by the Josephson junction model for granular superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346784
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  • 7
    Electronic Resource
    Electronic Resource
    Study of the low-lying electronic states of Si2 and Si−2 using negative ion photodetachment techniques (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1441-1448 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low-lying electronic states of Si−2 and Si2 were studied using both photoelectron spectroscopy and threshold photodetachment spectroscopy of Si−2 . Our measurements show that the ground state of Si2 is the X 3Σ−g state and that the X 3Σ−g–D 3Πu splitting is 0.083±0.010 eV. Additional spectroscopic constants for the X 3Σ−g, D 3Πu, a 1Δg, b 1Πu and c 1Σ+g states of Si2 were also determined. For Si−2 , the first two electronic states were identified as: 2Πu (Te =0, re =2.207±0.005 A(ring), and ν=533±5 cm−1) and 2Σ+g (Te =0.025±0.010 eV, re =2.116±0.005 A(ring), and ν=528±10 cm−1). The electron affinity for Si2 was found to be 2.176±0.002 eV. Our results provide definitive orderings and splittings for the low-lying electronic states in both Si2 and Si−2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461057
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  • 8
    Electronic Resource
    Electronic Resource
    The reaction of atomic fluorine with formyl fluoride: An experimental and theoretical study (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 276-286 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate coefficient for the reaction of F+HFCO has been determined over the temperature range 298–368 K by monitoring the appearance rate of HF infrared chemiluminescence using the infrared multiphoton dissociation-infrared chemiluminescence technique. Results, expressed in the Arrhenius form k(T) =4.4±2.6×10−11 exp[−1800±400/RT] cm3 molecule−1 s−1, are compared with the barrier height calculated using ab initio molecular orbital theory. The rate coefficient is theoretically discussed with the aid of essential features of the potential energy surface for the F+HFCO system and the potential importance of the reaction is considered. A rate coefficient for deactivation of excited HF by HFCO is reported as 1.2±0.2×10−12 cm3 molecule−1 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459601
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  • 9
    Electronic Resource
    Electronic Resource
    Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1968-1970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two traps with activation energies of 0.20 and 0.63 eV, respectively. The results suggest that the diffusion of Fe-atoms suppresses the formation of a few defects in the IP SI InP. The nature of deep levels in the IP and PP SI InP has been discussed on the basis of these results. The relation between material property and defects in those SI InP has also been revealed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491026
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1325-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity of thin magnetic films. We show that the roughness increases (decreases) the domain wall thickness and domain size for Bloch walls (Néel walls). The surface roughness affects the domain wall movement and causes the increase of coercivity for Néel walls. The coercivity due to domain rotation for Bloch walls decreases with the increase of roughness. The domain wall thickness, domain size, and coercivity are each related to the demagnetizing factor, which depends on the roughness and type of wall (Bloch wall or Néel wall). The calculated coercivity versus thickness is compared with experimental data of ultrathin Co films, where the thickness dependent roughness parameters are available. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331065
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